Silicon PIN Diodes
BXY 42BA-S
BXY 42BB-S
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BXY 42BA-S
Q62702-X151
S
BXY 42BB-S
Q62702-X159
Pointed cathode
Parameter
Symbol
Unit
Reverse voltage
V
R
50
V
Junction temperature
T
j
175
C
T
stg
55 ... + 150
Storage temperature range
Operating temperature range
T
op
55 ... + 150
Values
30
BXY 42BA-S
BXY 42BB-S
1)
For detailed information see chapter Package Outlines.
q
Beam lead version
q
Fast switching
BXY 42BA-S
BXY 42BA-S
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
V
Breakdown voltage
I
R
= 10
A
V
(BR)
50
Forward voltage
I
F
= 50 mA
V
F
1.0
nA
Reverse current
V
R
= 40 V
I
R
5
ns
Storage time
I
F
= 10 mA,
V
R
= 10 V
t
s
3
pF
Diode capacitance
V
R
= 30 V
, f
= 1 MHz
C
T
0.08
ns
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA
L
30
Forward resistance
f
= 100 MHz,
I
F
= 10 mA
r
f
1.8
BXY 42BA-S
BXY 42BA-S
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
V
Breakdown voltage
I
R
= 10
A
V
(BR)
30
Forward voltage
I
F
= 50 mA
V
F
1.1
nA
Reverse current
V
R
= 20 V
I
R
5
ns
Storage time
I
F
= 10 mA,
V
R
= 10 V
t
s
2
pF
Diode capacitance
V
R
= 20 V
, f
= 1 MHz
C
T
0.15
ns
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA
L
20
Forward resistance
f
= 100 MHz,
I
F
= 10 mA
r
f
1.3
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