FP
Semiconductor Group
1
Draft A02 1998-04-01
HiRel
Silicon PIN Diode
BXY 44P
Features
HiRel
Discrete and Microwave Semiconductor
Current controlled RF resistor for RF attenuators
and switches
High reverse voltage
Matched diode - pair
Hermetically sealed microwave package
qualified
ESA/SCC Detail Spec. No.: 5513/030
ESD:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precautions!
(ql) Quality Level: P: Professional Quality,
Ordering Code: Q62702X166
H: High Rel Quality,
Ordering Code: on request
S: Space Quality,
Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702X165
(see
Chapter Order Instructions
for ordering example)
Type
Marking
Ordering Code
Pin Configuration
Package
BXY 44P-FP (ql)
-
see below
FP
Table 1
Maximum Ratings
Parameter
Symbol
Limit Values
Unit
Reverse voltage
V
R
200
V
Forward current
I
F
400
mA
Power dissipation
P
tot
500
mW
Operating temperature range
T
op
-
55 to + 150
C
Storage temperature range
T
stg
-
65 to + 175
C
Soldering temperature
T
sol
+ 235
C
Junction temperature
T
j
175
C
Thermal resistance junction-case
R
th(j-c)
110
K/W
BXY 44P
Semiconductor Group
2
Draft A02 1998-04-01
Electrical Characteristics
1)
D
R
F
[%] = 100
(RF_Diode2
-
RF_Diode1)/RF_Diode1
Table 2
DC Characteristics
at
T
A
= 25
C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Reverse current 1
V
R1
= 200 V
I
R1
-
-
100
nA
Reverse current 2
V
R2
= 100 V
I
R2
-
-
5
nA
Forward voltage
I
F
= 100 mA
V
F
-
1.0
1.05
V
Table 3
AC Characteristics
at
T
A
= 25
C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Total capacitance
V
R
= 50 V,
f
= 1 MHz
C
T
-
0.50
0.75
pF
Forward resistance
f
= 100 MHz,
I
F1
= 10
m
A
R
F1
700
900
1200
W
Forward resistance
f
= 100 MHz,
I
F2
= 1 mA
R
F2
11
20
27
W
Forward resistance
f
= 100 MHz,
I
F3
= 10 mA
R
F3
2.0
3.8
5.0
W
Minority carrier lifetime
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
t
L
300
800
-
ns
Table 4
Matching Requirements
at
T
A
= 25
C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Difference in forward resistance 2
1)
R
F2
-
-
15
%
Difference in forward resistance 3
1)
R
F3
-
-
15
%
BXY 44P
Semiconductor Group
3
Draft A02 1998-04-01
Order Instructions
Full type variant including package variant and quality level must be specified by the
orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies
device family and quality level only.
Ordering Form:
Ordering Code: Q
BXY44P-(x) (ql)
(x): Package Variant
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702X165
BXY44P-FP ES
For BXY44P in Flatpack Package; ESA Space Quality Level
Further Information
See our WWW-Pages:
Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
HiRel Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division:
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: martin.wimmers@hl.siemens.de
PDF 
ZIP