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Электронный компонент: Q62702-Z2026

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Semiconductor Group
1
NPN Silicon Switching Transistors
PZT 2222
PZT 2222 A
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
PZT 2222
PZT 2222 A
Q62702-Z2026
Q62702-Z2027
ZT 2222
ZT 2222 A
SOT-223
1
2
3
4
B
C
E
C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
Collector current
I
C
mA
Junction temperature
T
j
C
Total power dissipation,
T
S
=
110 C
P
tot
W
Storage temperature range
T
stg
Collector-base voltage
V
CB0
Thermal Resistance
Junction - ambient
2)
R
th JA
87
K/W
600
1.5
150
65 ... + 150
Emitter-base voltage
V
EB0
30
40
60
75
PZT 2222
PZT 2222 A
5
6
Junction - soldering point
R
th JS
27
q
High DC current gain: 0.1 mA to 500 mA
q
Low collector-emitter saturation voltage
q
Complementary types: PZT 2907 (PNP)
PZT 2907 A (PNP)
5.91
Semiconductor Group
2
PZT 2222
PZT 2222 A
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
1)
I
C
= 0.1 mA,
V
CE
= 10 V
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 150 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 10 V
PZT 2222
PZT 2222 A
V
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
PZT 2222
PZT 2222 A
V
(BR)CE0
30
40


Collector-emitter cutoff current
V
CE
= 30 V,
V
BE
= 0.5 V
I
CEV
50
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 10
A,
I
B
= 0
PZT 2222
PZT 2222 A
V
(BR)CB0
60
75


Emitter-base breakdown voltage
I
E
= 10
A,
I
E
= 0
PZT 2222
PZT 2222 A
V
(BR)EB0
5
6


nA
Emitter-base cutoff current
V
EB
= 3 V,
I
C
= 0
I
EB0
10
nA
nA
A
A
Collector-base cutoff current
V
CB
= 50 V,
I
E
= 0
PZT 2222
PZT 2222 A
V
CB
= 50 V,
I
E
= 0,
T
A
= 150 C
PZT 2222
PZT 2222 A
I
CB0






20
10
20
10
Emitter-base cutoff current
V
CE
= 30 V,
V
BE
= 0.5 V
I
EBV
50
h
FE
35
50
75
100
30
40








300

1)
Pulse test conditions:
t
300
s,
D
= 2 %.
Semiconductor Group
3
PZT 2222
PZT 2222 A
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Base-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
PZT 2222
PZT 2222 A
I
C
= 500 mA,
I
B
= 50 mA
PZT 2222
PZT 2222 A
V
BEsat






1.3
1.2
2.6
2.0
V
Collector-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
PZT 2222
PZT 2222 A
I
C
= 500 mA,
I
B
= 50 mA
PZT 2222
PZT 2222 A
V
CEsat






0.4
0.3
1.6
1.0
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 20 V,
f
= 100 MHz
f
T
200
AC characteristics
pF
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
8
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
ns
ns
ns
ns
V
CC
= 30 V,
I
C
= 150 mA
, I
B1
= 15 mA
Delay time
Rise time
V
CC
= 30 V,
I
C
= 150 mA
, I
B1
=
I
B2
= 15 mA
Storage time
Fall time
(see diagrams)
t
d
t
r
t
stg
t
f




10
25
225
60
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
ibo
30
1)
Pulse test conditions:
t
300
s,
D
= 2 %.
Semiconductor Group
4
PZT 2222
PZT 2222 A
Input waveform and test circuit for determining delay, rise and turn-on time
Turn-on time when switched to
I
Con
= 150 mA;
I
Bon
= 15 mA
Input waveform and test circuit for determining storage, fall and turn-off time
Turn-off time when switched to
I
Con
= 150 mA;
I
Bon
= 15 mA to cut-off with
I
Boff
= 15 mA
Pulse generator:
Oscillograph:
duty factor
D
= 2 %
rise time
t
r
5 ns
pulse duration
t
p
= 200 ns
output impedance
Z
i
= 10 M
rise time
t
r
2 ns
output impedance
Z
o
= 50
Semiconductor Group
5
PZT 2222
PZT 2222 A
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Saturation voltage
I
C
=
f
(
V
BEsat
,
V
CEsat
)
h
FE
= 10
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 20 V,
f
= 100 MHz
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 10 V
Semiconductor Group
6
PZT 2222
PZT 2222 A
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)