Semiconductor Group
1
PNP Silicon Switching Transistor
PZT 3906
5.91
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
PZT 3906
Q62702-Z2030
ZT 3906
SOT-223
1
2
3
4
B
C
E
C
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
40
V
Collector-base voltage
V
CB0
40
Emitter-base voltage
V
EB0
5
Collector current
I
C
200
mA
Total power dissipation,
T
S
= 80 C
P
tot
1.5
W
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
2)
R
th JA
117
K/W
Junction - soldering point
R
th JS
47
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
q
High DC current gain 0.1 mA to 100 mA
q
Low collector-emitter saturation voltage
q
Complementary type: PZT 3904 (NPN)
Semiconductor Group
2
PZT 3906
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CE0
40
Collector-base breakdown voltage
I
C
= 10
A,
I
B
= 0
V
(BR)CB0
40
Emitter-base breakdown voltage
I
E
= 10
A,
I
C
= 0
V
(BR)EB0
5
nA
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
I
CB0
50
Collector-emitter cutoff current
V
CE
= 30 V, +
V
BE
= 0.5 V
I
CEV
50
DC current gain
1)
I
C
= 0.1 mA
, V
CE
= 1 V
I
C
= 1 mA
, V
CE
= 1 V
I
C
= 10 mA
, V
CE
= 1 V
I
C
= 50 mA
, V
CE
= 1 V
I
C
= 100 mA
, V
CE
= 1 V
h
FE
60
80
100
60
30
300
V
Collector-emitter saturation voltage
1)
I
C
= 10 mA
, I
B
= 1 mA
I
C
= 50 mA
, I
B
= 5 mA
V
CEsat
0.25
0.4
Base-emitter saturation voltage
1)
I
C
= 10 mA
, I
C
= 1 mA
I
C
= 50 mA
, I
C
= 5 mA
V
BEsat
0.85
0.95
Collector-base cutoff current
V
CE
= 30 V, +
V
BE
= 0.5 V
I
BEV
50
1)
Pulse test conditions:
t
300
s,
D
= 2 %
Semiconductor Group
3
PZT 3906
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
MHz
Transition frequency
I
C
= 10 mA
, V
CE
= 20 V,
f
= 100 MHz
f
T
250
pF
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz
C
obo
4.5
AC characteristics
Unit
Values
Parameter
Symbol
min.
typ.
max.
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
ibo
10
dB
Noise figure
I
C
= 100
A
, V
CE
= 5 V,
R
S
= 1 k
,
f
= 10 Hz to 15.7 kHz
F
4
k
Input impedance
I
C
= 1 mA
, V
CE
= 10 V,
f
= 1 kHz
h
11e
2
12
10
4
Open-circuit reverse voltage transfer ratio
I
C
= 1 mA
, V
CE
= 10 V,
f
= 1 kHz
h
12e
0.1
10
Short-circuit forward current transfer ratio
I
C
= 1 mA
, V
CE
= 10 V,
f
= 1 kHz
h
21e
100
400
S
Open-circuit output admittance
I
C
= 1 mA
, V
CE
= 10 V,
f
= 1 kHz
h
22e
3
60
ns
ns
ns
ns
V
CC
= 3 V,
I
C
= 10 mA
, I
B1
= 1 mA
V
BE(off)
= 0.5 V
Delay time
Rise time
V
CC
= 3 V,
I
C
= 10 mA
, I
B1
=
I
B2
= 1 mA
Storage time
Fall time
(see diagrams)
t
d
t
r
t
stg
t
f
35
35
225
75
Semiconductor Group
4
PZT 3906
Switching Times
Turn-on time when switched from +
V
BEoff
= 0.5 V to
V
BEon
= 10.6 V
, I
Con
= 10 mA;
I
Bon
= 1 mA
Input waveform;
t
r
<
1 ns;
t
p
= 300 ns;
Delay and rise time test circuit; total shunt
= 0.02.
capacitance of test jig and connectors
C
S
<
4 pF; scope impedance = 10 M
.
Turn-off time
I
Con
= 10 mA;
I
Bon
=
I
Boff
= 1 mA
Storage and fall time test circuit; total shunt
capacitance of test jig and connectors
C
S
<
4 pF; scope impedance = 10 M
.
Input waveform;
t
f
<
1 ns; 10
s
<
t
p
500
s;
= 0.02.
Semiconductor Group
5
PZT 3906
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 1 V, normalized
Saturation voltage
I
C
=
f
(
V
BEsat
,
V
CEsat
)
h
FE
= 10
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
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