Semiconductor Group
1
NPN Silicon Darlington Transistors
PZTA 13
PZTA 14
Maximum Ratings
Pin Configuration
1
2
3
4
B
C
E
C
Type
Ordering Code
(tape and reel)
Marking
Package
1)
PZTA 13
PZTA 14
Q62702-Z2033
Q62702-Z2034
PZTA 13
PZTA 14
SOT-223
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Parameter
Symbol
Values
Unit
Emitter-base voltage
V
EB0
Collector-base voltage
V
CB0
Junction temperature
T
j
C
Total power dissipation,
T
S
= 124 C
P
tot
W
Storage temperature range
T
stg
Collector-emitter voltage
V
CES
V
Thermal Resistance
Junction - ambient
2)
R
th JA
72
K/W
10
1.5
150
65 ... + 150
30
Collector current
I
C
mA
300
Peak collector current
I
CM
500
Junction - soldering point
R
th JS
17
30
Base current
I
B
100
Peak base current
I
BM
200
q
For general AF applications
q
High collector current
q
High current gain
q
Complementary types: PZTA 63
PZTA 64 (PNP)
5.91
Semiconductor Group
2
PZTA 13
PZTA 14
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter breakdown voltage
I
C
= 100
A
V
(BR)CES
30
nA
A
Collector-base cutoff current
V
CE
= 30 V,
I
E
= 0
V
CE
= 30 V,
I
E
= 0,
T
A
= 150 C
I
CB0
100
10
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Emitter-base breakdown voltage
I
E
= 10
A,
I
C
= 0
V
(BR)EB0
10
V
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 0.1 mA
V
CEsat
1.5
DC current gain
I
C
= 10 mA,
V
CE
= 5 V
PZTA 13
PZTA 14
I
C
= 100 mA,
V
CE
= 5 V
PZTA 13
PZTA 14
h
FE
5000
10000
10000
20000
MHz
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
125
AC characteristics
Collector-base breakdown voltage
I
C
= 100
A,
I
B
= 0
V
(BR)CB0
30
nA
Emitter-base cutoff current
V
EB
= 10 V,
I
C
= 0
I
EB0
100
Base-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 0.1 mA
V
BEsat
2.0
1)
Pulse test conditions:
t
300
s,
D
= 2 %.
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