Semiconductor Group
1
NPN Silicon High-Voltage Transistors
PZTA 42
PZTA 43
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
PZTA 42
PZTA 43
Q62702-Z2035
Q62702-Z2036
PZTA 42
PZTA 43
SOT-223
1
2
3
4
B
C
E
C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Parameter
Symbol
Values
Unit
Emitter-base voltage
V
EB0
Collector-base voltage
V
CB0
Junction temperature
T
j
C
Total power dissipation,
T
S
= 124 C
P
tot
W
Storage temperature range
T
stg
Collector-emitter voltage
V
CE0
V
Thermal Resistance
Junction - ambient
2)
R
th JA
72
K/W
6
1.5
150
65 ... + 150
300
200
PZTA 42
PZTA 43
Collector current
I
C
mA
500
Base current
I
B
100
Junction - soldering point
R
th JS
17
300
200
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Complementary types: PZTA 92, PZTA 93 (PNP)
5.91
Semiconductor Group
2
PZTA 42
PZTA 43
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
V
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
PZTA 42
PZTA 43
V
(BR)CE0
300
200
nA
nA
A
A
Collector-base cutoff current
V
CB
= 200 V
PZTA 42
V
CB
= 160 V
PZTA 43
V
CB
= 200 V,
T
A
= 150 C
PZTA 42
V
CB
= 160 V,
T
A
= 150 C
PZTA 43
I
CB0
100
100
20
20
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Emitter-base breakdown voltage
I
E
= 100
A,
I
C
= 0
V
(BR)EB0
6
V
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
PZTA 42
PZTA 43
V
CEsat
0.5
0.4
h
FE
25
40
40
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 10 V,
f
= 100 MHz
f
T
70
AC characteristics
pF
Collector-base capacitance
V
CB
= 20 V,
f
= 1 MHz
PZTA 42
PZTA 43
C
obo
3
4
Collector-base breakdown voltage
I
C
= 100
A,
I
B
= 0
PZTA 42
PZTA 43
V
(BR)CB0
300
200
nA
Emitter-base cutoff current
V
EB
= 3 V,
I
C
= 0
I
EB0
100
Base-emitter saturation voltage
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
0.9
1)
Pulse test conditions:
t
300
s,
D
= 2 %.
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