ChipFind - документация

Электронный компонент: Q62703-F97

Скачать:  PDF   ZIP
GaAs FET
CFY 30
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 1/6
11.01.1996
HL EH PD 21
D a t a s h e e t
* Low noise ( F
min
= 1.4 dB @ 4 GHz )
* High gain ( 11.5 dB typ. @ 4 GHz )
* For oscillators up to 12 GHz
* For amplifiers up to 6 GHz
* Ion implanted planar structure
* Chip all gold metallization
* Chip nitride passivation
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(tape and reel)
Pin Configuration
1 2 3 4
Package 1)
CFY 30
A2
Q62703-F97
S
D
S
G
SOT-143
Maximum ratings
Symbol
Value
Unit
Drain-source voltage
VDS
5
V
Drain-gate voltage
VDG
7
V
Gate-source voltage
VGS
-4 ... +0.5
V
Drain current
ID
80
mA
Channel temperature
TCh
150
C
Storage temperature range
Tstg
-40...+150
C
Total power dissipation
(TS < 70C)
2)
Ptot
250
mW
Thermal resistance
Channel-soldering point
2)
RthChS
<320
K/W
1)
Dimensions see chapter Package Outlines
2) T
S
is measured on the source 1 lead at the soldering point to the PCB.
GaAs FET
CFY 30
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 2/6
11.01.1996
HL EH PD 21
Electrical characteristics at
TA = 25C, unless otherwise specified
Characteristics
Symbol
min
typ
max
Unit
Drain-source saturation current
V
DS
= 3.5 V, V
GS
= 0 V
I
DSS
20
50
80
mA
Pinch-off voltage
V
DS
= 3.5 V I
D
= 1 mA
V
GS(P)
-0.5
-1.3
-4.0
V
Transconductance
V
DS
= 3.5 V I
D
= 15 mA
g
m
20
30
-
mS
Gate leakage current
V
DS
= 3.5 V
I
D
= 15 mA
I
G
-
0.1
2
A
Noise figure
V
DS
= 3.5 V
I
D
= 15 mA
f = 4 GHz
f = 6 GHz
F
-
-
1.4
2.0
1.6
-
dB
Associated gain
V
DS
= 3.5 V
I
D
= 15 mA
f = 4 GHz
f = 6 GHz
G
a
10
-
11.5
8.9
-
-
dB
Maximum available gain
V
DS
= 3.5 V
I
D
= 15 mA
f = 6 GHz
MAG
-
11.2
-
dB
Maximum stable gain
V
DS
= 3.5 V
I
D
= 15 mA
f = 4 GHz
MSG
-
14.4
-
dB
Power output at 1 dB compression
V
DS
= 4 V
I
D
= 30 mA
f = 6 GHz
P
1 dB
-
16
-
dBm
GaAs FET
CFY 30
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 3/6
11.01.1996
HL EH PD 21
Typical Common Source Noise Parameters
I
D
= 15 mA
V
DS
= 3.5 V
Z
0
= 50
f
F
min
G
a
opt
R
n
N
F
50
G(F
50
)
GHz
dB
dB
MAG
ANG
-
dB
dB
2
1.0
15.5
0.72
27
49
0.17
2.9
10.0
4
1.4
11.5
0.64
61
29
0.17
2.7
9.3
6
2.0
8.9
0.46
101
19
0.30
2.8
7.5
8
2.5
7.1
0.31
153
9
0.31
2.8
6.4
10
3.0
5.8
0.34
-133
14
0.38
3.4
4.2
12
3.5
5.0
0.41
-93
28
0.42
4.1
2.9
Total Power Dissipation Ptot = f (T
S
;T
A
)
0
1 0 0
2 0 0
0 5 0 1 0 0 1 5 0
A
S
to t
P
T
T
;
[ C ]
[ m W ]
A
T
S
T
3 0 0
GaAs FET
CFY 30
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 4/6
11.01.1996
HL EH PD 21
Output characteristics I
D
= f (V
DS
)
0
0
10
20
30
40
50
I
D
[mA]
V
DS
[V]
1
2
3
4
5
=0V
V
GS
=-0.2V
V
GS
=-0.4V
V
GS
=-0.6V
V
GS
=-0.8V
GS
V
=-1.0V
V
GS
=-1.2V
V
GS
=-1.4V
V
GS
GaAs FET
CFY 30
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 5/6
11.01.1996
HL EH PD 21
Typical Common Source S-Parameters
ID = 15 mA UD = 3.5 V Z
0
= 50
f
S11
S21
S12
S22
GHz
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
0.1
1.00
-1
2.43
178
0.003
87
0.70
-1
0.4
1.00
-6
2.43
171
0.010
23
0.69
-5
0.8
0.99
-14
2.43
162
0.020
78
0.68
-11
1.2
0.98
-21
2.43
154
0.030
72
0.67
-15
1.6
0.97
-28
2.44
145
0.040
66
0.66
-20
2.0
0.96
-36
2.45
137
0.050
60
0.65
-26
2.4
0.93
-44
2.47
129
0.058
55
0.64
-30
2.8
0.90
-53
2.49
120
0.066
50
0.62
-35
3.2
0.87
-62
2.50
111
0.074
45
0.60
-41
3.6
0.83
-72
2.50
102
0.082
39
0.57
-47
4.0
0.80
-82
2.50
93
0.090
32
0.54
-54
4.4
0.77
-92
2.51
83
0.097
25
0.50
-61
4.8
0.74
-104
2.49
73
0.103
18
0.46
-67
5.2
0.70
-115
2.45
64
0.108
12
0.43
-73
5.6
0.66
-127
2.41
54
0.112
6
0.40
-80
6.0
0.63
-139
2.36
45
0.114
0
0.36
-88
6.4
0.60
-150
2.30
37
0.115
-6
0.31
-98
6.8
0.57
-162
2.24
27
0.116
-11
0.27
-110
7.2
0.55
-174
2.19
17
0.116
-17
0.24
-122
7.6
0.54
172
2.14
8
0.116
-22
0.21
-137
8.0
0.53
160
2.08
-2
0.115
-27
0.19
-154
8.4
0.54
147
2.00
-11
0.113
-32
0.18
-173
8.8
0.55
135
1.92
-21
0.111
-37
0.18
171
9.2
0.56
124
1.83
-30
0.109
-42
0.19
155
9.6
0.57
114
1.72
-40
0.107
-46
0.21
141
10.0
0.58
106
1.61
-48
0.104
-50
0.23
128
10.4
0.59
98
1.51
-56
0.102
-53
0.26
118
10.8
0.60
91
1.42
-62
0.101
-56
0.29
108
11.2
0.61
85
1.35
-69
0.099
-58
0.32
100
11.6
0.62
79
1.30
-75
0.098
-60
0.34
93
12.0
0.62
74
1.25
-81
0.096
-63
0.36
85
GaAs FET
CFY 30
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 6/6
11.01.1996
HL EH PD 21
Typical Common Source S-Parameters
ID = 30 mA UD = 3.5 V Z
0
= 50
f
S11
S21
S12
S22
GHz
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
0.1
1.00
-2
3.23
178
0.002
85
0.71
-1
0.4
1.00
-8
3.21
171
0.009
79
0.70
-6
0.8
0.99
-16
3.19
162
0.017
73
0.69
-11
1.2
0.97
-24
3.18
153
0.025
70
0.67
-16
1.6
0.95
-32
3.17
143
0.034
65
0.66
-21
2.0
0.92
-40
3.17
135
0.042
61
0.65
-26
2.4
0.90
-48
3.17
127
0.051
56
0.63
-31
2.8
0.87
-58
3.17
119
0.059
50
0.61
-36
3.2
0.83
-68
3.16
109
0.067
45
0.58
-42
3.6
0.79
-79
3.12
99
0.073
40
0.55
-48
4.0
0.75
-91
3.08
88
0.079
34
0.52
-54
4.4
0.71
-102
3.04
78
0.084
28
0.50
-60
4.8
0.67
-114
3.00
68
0.089
21
0.47
-66
5.2
0.63
-126
2.95
58
0.092
15
0.43
-73
5.6
0.60
-138
2.87
49
0.094
10
0.38
-81
6.0
0.57
-150
2.77
40
0.096
4
0.34
-89
6.4
0.54
-162
2.68
31
0.097
-1
0.30
-99
6.8
0.52
-174
2.58
22
0.098
-6
0.27
-109
7.2
0.51
173
2.50
14
0.099
-11
0.24
-121
7.6
0.50
160
2.43
5
0.099
-16
0.21
-134
8.0
0.50
147
2.36
-4
0.099
-20
0.18
-148
8.4
0.51
135
2.26
-13
0.099
-24
0.16
-164
8.8
0.52
125
2.15
-22
0.099
-29
0.16
176
9.2
0.54
115
2.04
-30
0.099
-33
0.17
158
9.6
0.55
107
1.93
-39
0.099
-37
0.19
142
10.0
0.57
99
1.82
-47
0.099
-41
0.22
128
10.4
0.59
91
1.71
-54
0.100
-44
0.25
118
10.8
0.60
85
1.60
-62
0.101
-47
0.27
109
11.2
0.61
79
1.51
-69
0.102
-49
0.30
100
11.6
0.62
73
1.44
-75
0.103
-52
0.32
92
12.0
0.62
68
1.38
-82
0.104
-55
0.34
85