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Semiconductor Group
1
11.96
Besondere Merkmale
q
eingefrbtes, teildiffuses Gehuse
q
als optischer Indikator in Frontplatte einsetzbar
q
Ltspiee ohne Aufsetzebene
q
Bargraphanzeige
q
gegurtet lieferbar
q
Strimpulsfest nach DIN 40839
Features
q
colored, partly diffused package
q
for use as optical indicator in frontpanel
q
solder leads without stand-off
q
Bargraph displays
q
available taped on reel
q
load dump resistance acc. to DIN 40839
Symbol LED
5 mm
2.5 mm, Partly Diffused
LR B480, LS B480, LY B480
LG B480
Streuung der Lichtstrke in einer Verpackungseinheit
I
V max
/
I
V min
2.0.
Luminous intensity ratio in one packaging unit
I
V max
/
I
V min
2.0.
Typ
Type
Emissionsfarbe
Color of
Emission
Gehusefarbe
Color of
Package
Lichtstrke
Luminous
Intensity
I
F
= 10 mA
I
V
(mcd)
Bestellnummer
Ordering Code
LR B480-BD
LR B480-C
LR B480-D
LR B480-CE
red
red, partly
diffused
0.16 ... 0.80
0.25 ... 0.50
0.40 ... 0.80
0.25 ... 1.25
Q62703-Q1464
Q62703-Q1465
Q62703-Q2648
Q62703-Q3841
LS B480-EH
LS B480-G
LS B480-H
LS B480-GK
super-red
red, partly
diffused
0.63 ... 5.00
1.60 ... 3.20
2.50 ... 5.00
1.60 ... 12.50
Q62703-Q1466
Q62703-Q1467
Q62703-Q1468
Q62703-Q1469
LY B480-EH
LY B480-G
LY B480-H
LY B480-J
LY B480-GK
yellow
yellow, partly
diffused
0.63 ... 5.00
1.60 ... 3.20
2.50 ... 5.00
4.00 ... 8.00
1.60 ... 12.50
Q62703-Q1470
Q62703-Q1471
Q62703-Q2006
Q62703-Q1473
Q62703-Q2007
LG B480-EH
LG B480-G
LG B480-H
LG B480-GK
green
green, partly
diffused
0.63 ... 5.00
1.60 ... 3.20
2.50 ... 5.00
1.60 ... 12.50
Q62703-Q1477
Q62703-Q1870
Q62703-Q2025
Q62703-Q2026
VEX06719
Semiconductor Group
2
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LR
LS, LY, LG
Betriebstemperatur
Operating temperature range
T
op
55 ... + 100
C
Lagertemperatur
Storage temperature range
T
stg
55 ... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
C
Durchlastrom
Forward current
I
F
45
40
mA
Stostrom
Surge current
t
10
s,
D
= 0.005
I
FM
0.5
A
Sperrspannung
Reverse voltage
V
R
5
V
Verlustleistung
Power dissipation
T
A
25 C
P
tot
100
140
mW
Wrmewiderstand
Thermal resistance
Sperrschicht / Luft
Junction / air
R
th JA
400
K/W
LR B480, LS B480, LY B480
LG B480
Semiconductor Group
3
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LR
LS
LY
LG
Wellenlnge des emittierten Lichtes
(typ.)
Wavelength at peak emission
(typ.)
I
F
= 20 mA
peak
660
635
586
565
nm
Dominantwellenlnge
(typ.)
Dominant wavelength
(typ.)
I
F
= 20 mA
dom
645
628
590
570
nm
Spektrale Bandbreite bei 50 %
I
rel max
(typ.)
Spectral bandwidth at 50 %
I
rel max
(typ.)
I
F
= 20 mA
35
45
45
25
nm
Abstrahlwinkel bei 50 %
I
V
(Vollwinkel)
Viewing angle at 50 %
I
V
2
100
100
100
100
Grad
deg.
Durchlaspannung
(typ.)
Forward voltage
(max.)
I
F
= 10 mA
V
F
V
F
1.6
2.0
2.0
2.6
2.0
2.6
2.0
2.6
V
V
Sperrstrom
(typ.)
Reverse current
(max.)
V
R
= 5 V
I
R
I
R
0.01
10
0.01
10
0.01
10
0.01
10
A
A
Kapazitt
(typ.)
Capacitance
V
R
= 0 V,
f
= 1 MHz
C
0
25
12
10
15
pF
Schaltzeiten:
Switching times:
I
V
from 10 % to 90 %
(typ.)
I
V
from 90 % to 10 %
(typ.)
I
F
= 100 mA,
t
P
= 10
s,
R
L
= 50
t
r
t
f
120
50
300
150
300
150
450
200
ns
ns
LR B480, LS B480, LY B480
LG B480
Semiconductor Group
4
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 20 mA
Relative spectral emission
V (
) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
LR B480, LS B480, LY B480
LG B480
Semiconductor Group
5
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
P
)
Permissible pulse handling capability
Duty cycle D = parameter,
T
A
= 25 C
LS, LY, LG
LR B480, LS B480, LY B480
LG B480
Relative Lichtstrke
I
V
/
I
V(10 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
P
)
Permissible pulse handling capability
Duty cycle
D
= parameter,
T
A
= 25 C
LR
Semiconductor Group
6
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)
Dominantwellenlnge
dom
=
f
(
T
A
)
Dominant wavelength
I
F
= 20 mA
LR B480, LS B480, LY B480
LG B480
Wellenlnge der Strahlung
peak
=
f
(
T
A
)
Wavelength at peak emission
I
F
= 20 mA
Durchlaspannung
V
F
=
f
(
T
A
)
Forward voltage
I
F
= 10 mA
Semiconductor Group
7
LR B480, LS B480, LY B480
LG B480
Relative Lichtstrke
I
V
/
I
V(25
C)
=
f
(
T
A
)
Relative luminous intensity
I
F
= 10 mA
Mazeichnung
(Mae in mm, wenn nicht anders angegeben)
Package Outlines
(Dimensions in mm, unless otherwise specified)
Kathodenkennzeichnung:
Krzerer Ltspie
Cathode mark:
Short solder lead
GEX06719