Semiconductor Group
1
1998-07-13
3 mm (T1) LED, Diffused
LR 3360, LS 3360, LO 3360
LY 3360, LG 3360, LP 3360
VEX
0
6
7
1
0
Besondere Merkmale
q
eingefrbtes, diffuses Gehuse
q
als optischer Indikator einsetzbar
q
Ltspiee mit Aufsetzebene
q
gegurtet lieferbar
q
Strimpulsfest nach DIN 40839
Features
q
colored, diffused package
q
for use as optical indicator
q
solder leads with stand-off
q
available taped on reel
q
load dump resistant acc. to DIN 40839
Semiconductor Group
2
1998-07-13
Streuung der Lichtstrke in einer Verpackungseinheit
I
V max
/
I
V min
2.0.
Luminous intensity ratio in one packaging unit
I
V max
/
I
V min
2.0.
Typ
Type
Emissionsfarbe
Color of
Emission
Gehusefarbe
Color of
Package
Lichtstrke
Luminous
Intensity
I
F
= 10 mA
I
V
(mcd)
Bestellnummer
Ordering Code
LR 3360-DG
LR 3360-F
LR 3360-G
LR 3360-FJ
red
red diffused
0.4 ... 3.2
1.0 ... 2.0
1.6 ... 3.2
1.0 ... 8.0
Q62703-Q1316
Q62703-Q1317
Q62703-Q1318
Q62703-Q1319
LS 3360-HL
LS 3360-K
LS 3360-L
LS 3360-KN
super-red
red diffused
2.5 ... 20.0
6.3 ... 12.5
10.0 ... 20.0
6.3 ... 50.0
Q62703-Q1320
Q62703-Q1321
Q62703-Q1322
Q62703-Q1323
LO 3360-HL
LO 3360-K
LO 3360-L
LO 3360-JM
orange
orange diffused
2.5 ... 20.0
6.3 ... 12.5
10.0 ... 20.0
4.0 ... 32.0
Q62703-Q1887
Q62703-Q2400
Q62703-Q2596
Q62703-Q2410
LY 3360-HL
LY 3360-K
LY 3360-L
LY 3360-KN
yellow
yellow diffused
2.5 ... 20.0
6.3 ... 12.5
10.0 ... 20.0
6.3 ... 50.0
Q62703-Q1324
Q62703-Q1325
Q62703-Q1326
Q62703-Q1998
LG 3360-HL
LG 3360-J
LG 3360-K
LG 3360-L
LG 3360-KN
green
green diffused
2.5 ... 20.0
4.0 ... 8.0
6.3 ... 12.5
10.0 ... 20.0
6.3 ... 50.0
Q62703-Q3818
Q62703-Q1865
Q62703-Q2008
Q62703-Q3507
Q62703-Q3819
LP 3360-GK
LP 3360-H
LP 3360-J
LP 3360-HL
pure green
green diffused
1.6 ... 12.5
2.5 ... 5.0
4.0 ... 8.0
2.5 ... 20.0
Q62703-Q2467
Q62703-Q2914
Q62703-Q2915
Q62703-Q3213
LR 3360, LS 3360, LO 3360
LY 3360, LG 3360, LP 3360
Semiconductor Group
3
1998-07-13
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS, LO, LY, LG LR
LP
Betriebstemperatur
Operating temperature range
T
op
55 ... + 100
C
Lagertemperatur
Storage temperature range
T
stg
55 ... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
C
Durchlastrom
Forward current
I
F
40
45
30
mA
Stostrom
Surge current
t
10
s, D = 0.005
I
FM
0.5
A
Sperrspannung
Reverse voltage
V
R
5
V
Verlustleistung
Power dissipation
T
A
25 C
P
tot
140
100
100
mW
Wrmewiderstand
Thermal resistance
Sperrschicht / Luft
Junction / air
R
th JA
400
K/W
LR 3360, LS 3360, LO 3360
LY 3360, LG 3360, LP 3360
Semiconductor Group
4
1998-07-13
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LR
LS
LO
LY
LG
LP
Wellenlnge des emittierten Lichtes(typ.)
Wavelength at peak emission(typ.)
I
F
= 20 mA
peak
660
635
610
586
565
557
nm
Dominantwellenlnge(typ.)
Dominant wavelength(typ.)
I
F
= 20 mA
dom
645
628
605
590
570
560
nm
Spektrale Bandbreite bei 50 %
I
rel max
(typ.)
Spectral bandwidth at 50 %
I
rel max
(typ.)
I
F
= 20 mA
35
45
40
45
25
22
nm
Abstrahlwinkel bei 50 %
I
V
(Vollwinkel)
Viewing angle at 50 %
I
V
2
70
70
70
70
70
70
Grad
deg.
Durchlaspannung(typ.)
Forward voltage(max.)
I
F
= 10 mA
V
F
V
F
1.6
2.0
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6
V
V
Sperrstrom(typ.)
Reverse current(max.)
V
R
= 5 V
I
R
I
R
0.01
10
0.01
10
0.01
10
0.01
10
0.01
10
0.01
10
A
A
Kapazitt(typ.)
Capacitance
V
R
= 0 V,
f
= 1 MHz
C
0
25
12
8
10
15
15
pF
Schaltzeiten:
Switching times:
I
V
from 10 % to 90 %(typ.)
I
V
from 90 % to 10 %(typ.)
I
F
= 100 mA,
t
P
= 10
s,
R
L
= 50
t
r
t
f
120
50
300
150
300
150
300
150
450
200
450
200
ns
ns
LR 3360, LS 3360, LO 3360
LY 3360, LG 3360, LP 3360
Semiconductor Group
5
1998-07-13
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 20 mA
Relative spectral emission
V (
) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
rel
OHL01698
V
100
400
450
500
550
600
650
700
nm
pure-green green
yellow
orange
super-red
red
hyper-red
blue
80
60
40
20
0
%
LR 3360, LS 3360, LO 3360
LY 3360, LG 3360, LP 3360
Semiconductor Group
6
1998-07-13
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
P
)
Permissible pulse handling capability
Duty cycle D = parameter,
T
A
= 25 C
LS, LO, LY, LG
Relative Lichtstrke
I
V
/
I
V(10 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
P
)
Permissible pulse handling capability
Duty cycle D = parameter,
T
A
= 25 C
LR
V
V (10 mA)
10
-1
0
10
10
1
2
10
mA
red
yellow
green
super-red
orange
pure-green
10
-3
5
OHL02146
F
5
-2
10
5
-1
10
0
10
1
10
5
5
LR 3360, LS 3360, LO 3360
LY 3360, LG 3360, LP 3360
Semiconductor Group
7
1998-07-13
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
P
)
Permissible pulse handling capability
Duty cycle D = parameter,
T
A
= 25 C
LP
Wellenlnge der Strahlung
peak
=
f
(
T
A
)
Wavelength at peak emission
I
F
= 20 mA
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)
Dominantwellenlnge
dom
=
f
(
T
A
)
Dominant wavelength
I
F
= 20 mA
OHL01686
s
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
D
T
T
P
F
t
P
=
D
= 0.005
0.01
0.02
0.05
0.2
0.5
DC
10
1
5
F
t
2
10
0.1
p
10
3
mA
LR 3360, LS 3360, LO 3360
LY 3360, LG 3360, LP 3360
Semiconductor Group
8
1998-07-13
Durchlaspannung
V
F
=
f
(
T
A
)
Forward voltage
I
F
= 10 mA
Relative Lichtstrke
I
V
/
I
V(25
C)
=
f
(
T
A
)
Relative luminous intensity
I
F
= 10 mA
Mazeichnung
(Mae in mm, wenn nicht anders angegeben)
Package Outlines
(Dimensions in mm, unless otherwise specified)
Kathodenkennzeichnung:
Krzerer Ltspie
Cathode mark:
Short solder lead
0.4
0.6
3.1
3.4
Area not flat
5.7
6.1
2.7
2.9
4.8
4.4
3.7
3.5
27.0
29.0
spacing
2.54 mm
0.8
0.4
0.4
0.7
0.4
0.6
1.2
1.8
GEX06710
0.9
1.1
Collector/
2.1
2.7
Chip position
Cathode
LR 3360, LS 3360, LO 3360
LY 3360, LG 3360, LP 3360
PDF 
ZIP