Semiconductor Group
1
1998-11-12
SIDELED
Super-Bright, Hyper-Red GaAIAs-LED
LH A674
Streuung der Lichtstrke in einer Verpackungseinheit
I
V max
/
I
V min
2.0.
Luminous intensity ratio in one packaging unit
I
V max
/
I
V min
2.0.
Typ
Type
Emissions-
farbe
Color of
Emission
Farbe der
Lichtaustritts-
flche
Color of the
Light Emitting
Area
Lichtstrke
Luminous
Intensity
I
F
= 10 mA
I
V
(mcd)
Lichtstrom
Luminous
Flux
I
F
= 10 mA
V
(mlm)
Bestellnummer
Ordering code
LH A674-KM
LH A674-L
LH A674-M
LH A674-LN
hyper-red
colorless clear
6.3 ...
32
10.0 ...
20
16.0 ...
32
10.0 ...
50
-
45 (typ.)
75 (typ.)
-
Q62703-Q2546
Q62703-Q2830
Q62703-Q2831
Q62703-Q2832
VPL06880
Besondere Merkmale
q
Gehusefarbe: wei
q
Doppel-Heterostruktur in GaAlAs Technologie
q
besonders hohe Lichtstrke
q
als optischer Indikator einsetzbar
q
zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung
q
fr alle SMT-Bestck- und Reflow-Lttechniken geeignet
q
gegurtet (12-mm-Filmgurt)
q
Strimpulsfest nach DIN 40839
Features
q
color of package: white
q
double heterojunction in GaAIAs technology
q
superior luminous intensity
q
for use as optical indicator
q
for backlighting, optical coupling into light pipes and lenses
q
suitable for all SMT assembly and reflow soldering methods
q
available taped on reel (12 mm tape)
q
load dump resistant acc. to DIN 40839
Semiconductor Group
2
1998-11-12
LH A674
Grenzwerte
Maximum Ratings
*
)
PC-board: FR4
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Betriebstemperatur
Operating temperature range
T
op
55 ... + 100
C
Lagertemperatur
Storage temperature range
T
stg
55 ... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
C
Durchlastrom
Forward current
I
F
30
mA
Stostrom
Surge current
t
10
s,
D
= 0.005
I
FM
0.5
A
Sperrspannung
Reverse voltage
V
R
3
V
Verlustleistung
Power dissipation
T
A
25 C
P
tot
90
mW
Wrmewiderstand
Thermal resistance
Sperrschicht / Luft
Junction / air
Montage auf PC-Board*
)
(Padgre je
16 mm
2
)
mounted on PC-Board*
)
(pad size
16 mm
2
each)
R
th JA
430
K/W
Semiconductor Group
3
1998-11-12
LH A674
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Wellenlnge des emittierten Lichtes
(typ.)
Wavelength at peak emission
(typ.)
I
F
= 10 mA
peak
660
nm
Dominantwellenlnge
(typ.)
Dominant wavelength
(typ.)
I
F
= 10 mA
dom
645
nm
Spektrale Bandbreite bei 50 %
I
rel max
(typ.)
Spectral bandwidth at 50 %
I
rel max
(typ.)
I
F
= 10 mA
22
nm
Abstrahlwinkel bei 50 %
I
V
(Vollwinkel)
Viewing angle at 50 %
I
V
2
120
Grad
deg.
Durchlaspannung
(typ.)
Forward voltage
(max.)
I
F
= 10 mA
V
F
V
F
1.75
2.6
V
V
Sperrstrom
(typ.)
Reverse current
(max.)
V
R
= 3 V
I
R
I
R
0.01
10
A
A
Kapazitt
(typ.)
Capacitance
V
R
= 0 V,
f
= 1 MHz
C
0
25
pF
Schaltzeiten:
Switching times:
I
V
from 10 % to 90 %
(typ.)
I
V
from 90 % to 10 %
(typ.)
I
F
= 100 mA,
t
P
= 10
s,
R
L
= 50
t
r
t
f
140
110
ns
ns
Semiconductor Group
4
1998-11-12
LH A674
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 10 mA
Relative spectral emission
V (
) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
rel
OHL01698
V
100
400
450
500
550
600
650
700
nm
pure-green green
yellow
orange
super-red
red
hyper-red
blue
80
60
40
20
0
%
0
0.2
0.4
1.0
0.8
0.6
1 0
0 8
0 6
0 4
0
10
20
40
30
OHL01660
50
60
70
80
90
100
0
20
40
60
80
100
120
Semiconductor Group
5
1998-11-12
LH A674
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
P
)
Permissible pulse handling capability
Duty cycle
D
= parameter,
T
A
= 25 C
Relative Lichtstrke
I
V
/
I
V(10 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 C
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)
OHL01686
s
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
D
T
T
P
F
t
P
=
D
= 0.005
0.01
0.02
0.05
0.2
0.5
DC
10
1
5
F
t
2
10
0.1
p
10
3
mA
60
OHL01661
F
0
100
60
40
20
A
80
0
T
10
20
30
40
50
C
mA
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