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Электронный компонент: Q62703-Q2745

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Semiconductor Group
1
11.96
VPL06899
Besondere Merkmale
q
Gehusefarbe: wei
q
als optischer Indikator einsetzbar
q
zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung
q
fr alle SMT-Bestck- und Lttechniken geeignet
q
gegurtet (12-mm-Filmgurt)
q
Strimpulsfest nach DIN 40839
Features
q
color of package: white
q
for use as optical indicator
q
for backlighting, optical coupling into light pipes and lenses
q
suitable for all SMT assembly and soldering methods
q
available taped on reel (12 mm tape)
q
load dump resistant acc. to DIN 40839
TOPLED
RG
LS T770, LO T770, LY T770
LG T770, LP T770
Semiconductor Group
2
Streuung der Lichtstrke in einer Verpackungseinheit
I
V max
/
I
V min
2.0.
Luminous intensity ratio in one packaging unit
I
V max
/
I
V min
2.0.
Typ
Type
Emissions-
farbe
Color of
Emission
Farbe der
Lichtaustritts-
flche
Color of the
Light Emitting
Area
Lichtstrke
Luminous
Intensity
I
F
= 10 mA
I
V
(mcd)
Lichtstrom
Luminous
Flux
I
F
= 10 mA
V
(mlm)
Bestellnummer
Ordering Code
LS T770-HK
LS T770-J
LS T770-K
LS T770-JL
super-red
colorless clear
2.5 ... 12.5
4.0 ...
8.0
6.3 ... 12.5
4.0 ... 20.0
-
18 (typ.)
30 (typ.)
-
Q62703-Q2726
Q62703-Q2727
Q62703-Q2728
Q62703-Q2729
LO T770-HK
LO T770-J
LO T770-K
LO T770-JL
orange
colorless clear
2.5 ... 12.5
4.0 ...
8.0
6.3 ... 12.5
4.0 ... 20.0
-
18 (typ.)
30 (typ.)
-
Q62703-Q2730
Q62703-Q2731
Q62703-Q2732
Q62703-Q2733
LY T770-HL
LY T770-J
LY T770-K
LY T770-L
LY T770-JM
yellow
colorless clear
2.5 ... 20.0
4.0 ...
8.0
6.3 ... 12.5
10.0 ... 20.0
4.0 ... 32.0
-
18 (typ.)
30 (typ.)
45 (typ.)
-
Q62703-Q2734
Q62703-Q2736
Q62703-Q3241
Q62703-Q3906
Q62703-Q2737
LG T770-HL
LG T770-J
LG T770-K
LG T770-L
LG T770-JM
green
colorless clear
2.5 ... 20.0
4.0 ...
8.0
6.3 ... 12.5
10.0 ... 20.0
4.0 ... 32.0
-
18 (typ.)
30 (typ.)
45 (typ.)
-
Q62703-Q2738
Q62703-Q2739
Q62703-Q2740
Q62703-Q3100
Q62703-Q2741
LP T770-FJ
LP T770-G
LP T770-H
LP T770-GK
pure green
colorless clear
1.0 ...
8.0
1.6 ...
3.2
2.5 ...
5.0
1.6 ... 12.5
-
8 (typ.)
12 (typ.)
-
Q62703-Q2742
Q62703-Q2743
Q62703-Q2744
Q62703-Q2745
LS T770, LO T770, LY T770
LG T770, LP T770
Semiconductor Group
3
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Betriebstemperatur
Operating temperature range
T
op
55 ... + 100
C
Lagertemperatur
Storage temperature range
T
stg
55 ... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
C
Durchlastrom
Forward current
I
F
30
mA
Stostrom
Surge current
t
10
s,
D
= 0.005
I
FM
0.5
A
Sperrspanung
Reverse voltage
V
R
5
V
Verlustleistung
Power dissipation
P
tot
100
mW
Wrmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
Montage auf PC-board
*
)
(Padgre je
16 mm
2
)
mounted on PC board
*
)
(pad size
16 mm
2
each)
R
th JA
400
K/W
*
)
PC-board: FR4
LS T770, LO T770, LY T770
LG T770, LP T770
Semiconductor Group
4
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS
LO
LY
LG
LP
Wellenlnge des emittierten Lichtes
(typ.)
Wavelength at peak emission
(typ.)
I
F
= 10 mA
peak
635
610
586
565
557
nm
Dominantwellenlnge
(typ.)
Dominant wavelength
(typ.)
I
F
= 10 mA
dom
628
605
590
570
560
nm
Spektrale Bandbreite bei 50 %
I
rel max
(typ.)
Spectral bandwidth at 50 %
I
rel max
(typ.)
I
F
= 10 mA
45
40
45
25
22
nm
Abstrahlwinkel bei 50 %
I
v
(Vollwinkel)
Viewing angle at 50 %
I
v
2
120
120
120
120
120
Grad
deg.
Durchlaspannung
(typ.)
Forward voltage
(max.)
I
F
= 10 mA
V
F
V
F
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6
V
V
Sperrstrom
(typ.)
Reverse current
(max.)
V
R
= 5 V
I
R
I
R
0.01
10
0.01
10
0.01
10
0.01
10
0.01
10
A
A
Kapazitt
(typ.)
Capacitance
V
R
= 0 V,
f
= 1 MHz
C
0
12
8
10
15
15
pF
Schaltzeiten:
Switching times:
I
V
from 10 % to 90 %
(typ.)
I
V
from 90 % to 10 %
(typ.)
I
F
= 100 mA,
t
p
= 10
s,
R
L
= 50
t
r
t
f
300
150
300
150
300
150
450
200
450
200
ns
ns
LS T770, LO T770, LY T770
LG T770, LP T770
Semiconductor Group
5
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 10 mA
Relative spectral emission
V(
) =
spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
LS T770, LO T770, LY T770
LG T770, LP T770
Semiconductor Group
6
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible pulse handling capability
Duty cycle
D
= parameter,
T
A
= 25 C
Relative Lichtstrke
I
V
/
I
V(10 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 C
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)
LS T770, LO T770, LY T770
LG T770, LP T770
Semiconductor Group
7
Wellenlnge der Strahlung
peak
=
f
(
T
A
)
Wavelength at peak emission
I
F
= 10 mA
Durchlaspannung
V
F
=
f
(
T
A
)
Forward voltage
I
F
= 10 mA
Dominantwellenlnge
dom
=
f
(
T
A
)
Dominant wavelength
I
F
= 10 mA
Relative Lichtstrke
I
V
/
I
V(25 C )
=
f
(
T
A
)
Relative luminous intensity
I
F
= 10 mA
LS T770, LO T770, LY T770
LG T770, LP T770
Semiconductor Group
8
LS T770, LO T770, LY T770
LG T770, LP T770
Mazeichnung
(Mae in mm, wenn nicht anders angegeben)
Package Outlines
(Dimensions in mm, unless otherwise specified)
Kathodenkennung:
abgeschrgte Ecke
Cathode mark:
bevelled edge
GPL06899