Semiconductor Group
1
1998-11-12
VPL06880
Besondere Merkmale
q
Gehusefarbe: wei
q
als optischer Indikator einsetzbar
q
besonders geeignet bei hohem Umgebungslicht durch
erhhten Betriebsstrom (
50 mA DC)
q
zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung
q
fr alle SMT-Bestck- und Reflow-Lttechniken geeignet
q
gegurtet (12-mm-Filmgurt)
q
Strimpulsfest nach DIN 40839
Features
q
color of package: white
q
for use as optical indicator
q
appropriate for high ambient light because of the higher
operating current (
50 mA DC)
q
for backlighting, optical coupling into light pipes and lenses
q
suitable for all SMT assembly and reflow soldering methods
q
available taped on reel (12 mm tape)
q
load dump resistant acc. to DIN 40839
Super SIDELED
High-Current LED
LS A672, LO A672, LY A672
LG A672, LP A672
Semiconductor Group
2
1998-11-12
s
Nicht fr Neuentwicklungen / Not for new design
Streuung der Lichtstrke in einer Verpackungseinheit
I
V max
/
I
V min
2.0.
Luminous intensity ratio in one packaging unit
I
V max
/
I
V min
2.0.
Typ
Type
Emissions-
farbe
Color of
Emission
Farbe der
Lichtaustritts-
flche
Color of the
Light Emitting
Area
Lichtstrke
Luminous
Intensity
I
F
= 50 mA
I
V
(mcd)
Lichtstrom
Luminous
Flux
I
F
= 50 mA
V
(mlm)
Bestellnummer
Ordering Code
LS A672-LP
LS A672-N
LS A672-P
LS A672-NR
super-red
colorless clear
10
... 80
25
... 50
40
... 80
25
... 200
-
100 (typ.)
180 (typ.)
-
Q62703-Q2761
Q62703-Q2849
Q62703-Q3226
Q62703-Q2850
LO A672-LP
LO A672-N
LO A672-P
LO A672-NR
orange
colorless clear
10
... 80
25
... 50
40
... 80
25
... 200
-
100 (typ.)
180 (typ.)
-
Q62703-Q2548
Q62703-Q2851
Q62703-Q2852
Q62703-Q2853
LY A672-LN
LY A672-N
LY A672-P
LY A672-MQ
yellow
colorless clear
10
... 50
25
... 50
40
... 80
16
... 125
-
100 (typ.)
180 (typ.)
-
Q62703-Q2553
Q62703-Q2854
Q62703-Q2855
Q62703-Q2856
LG A672-LP
LG A672-N
LG A672-P
LG A672-MQ
green
colorless clear
10
... 80
25
... 50
40
... 80
16
... 125
-
100 (typ.)
180 (typ.)
-
Q62703-Q2544
Q62703-Q2857
Q62703-Q2858
Q62703-Q2859
LP A672-KN
LP A672-L
LP A672-M
LP A672-N
LP A672-LP
pure green
colorless clear
6.3 ... 50
10
... 20
16
... 32
25
... 50
10
... 80
-
45 (typ.)
75 (typ.)
100 (typ.)
-
Q62703-Q2860
Q62703-Q3838
Q62703-Q3839
Q62703-Q3148
Q62703-Q2863
LS A672, LO A672, LY A672
LG A672, LP A672
s
s
s
s
s
s
s
s
s
s
s
s
Semiconductor Group
3
1998-11-12
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Betriebstemperatur
Operating temperature range
T
op
55 ... + 100
C
Lagertemperatur
Storage temperature range
T
stg
55 ... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
C
Durchlastrom
Forward current
I
F
50
mA
Stostrom
Surge current
t
10
s,
D
= 0.005
I
FM
1
A
Sperrspannung
Reverse voltage
V
R
5
V
Verlustleistung
Power dissipation
P
tot
190
mW
Wrmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
Montage auf PC-board*
)
(Padgre je
16 mm
2
)
mounted on PC board*
)
(padsize
16 mm
2
each )
R
th JA
330
K/W
*
)
PC-board: FR4
LS A672, LO A672, LY A672
LG A672, LP A672
Semiconductor Group
4
1998-11-12
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS
LO
LY
LG
LP
Wellenlnge des emittierten Lichtes
(typ.)
Wavelength at peak emission
(typ.)
I
F
= 10 mA
peak
635
610
586
565
557
nm
Dominantwellenlnge
(typ.)
Dominant wavelength
(typ.)
I
F
= 10 mA
dom
628
605
590
570
560
nm
Spektrale Bandbreite bei 50 %
I
rel max
(typ.)
Spectral bandwidth at 50 %
I
rel max
(typ.)
I
F
= 10 mA
45
40
45
25
22
nm
Abstrahlwinkel bei 50 %
I
v
(Vollwinkel)
Viewing angle at 50 %
I
v
2
120
120
120
120
120
deg.
Durchlaspannung
(typ.)
Forward voltage
(max.)
I
F
= 50 mA
V
F
V
F
2.0
3.8
2.1
3.8
2.2
3.8
2.6
3.8
2.6
3.8*
)
V
V
Sperrstrom
(typ.)
Reverse current
(max.)
V
R
= 5 V
I
R
I
R
0.01
10
0.01
10
0.01
10
0.01
10
0.01
10
A
A
Kapazitt
(typ.)
Capacitance
V
R
= 0 V,
f
= 1 MHz
C
0
40
35
35
60
80
pF
Schaltzeiten:
Switching times:
I
V
from 10 % to 90 %
(typ.)
I
V
from 90 % to 10 %
(typ.)
I
F
= 100mA,
t
p
= 10
s,
R
L
= 50
t
r
t
f
350
200
500
250
350
200
500
250
500
250
ns
ns
*
)
V
F
max = 3.2 V as of Febr. 97
LS A672, LO A672, LY A672
LG A672, LP A672
Semiconductor Group
5
1998-11-12
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 10 mA
Relative Spectral Emission
V (
) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
rel
OHL01698
V
100
400
450
500
550
600
650
700
nm
pure-green green
yellow
orange
super-red
red
hyper-red
blue
80
60
40
20
0
%
0
0.2
0.4
1.0
0.8
0.6
1.0
0.8
0.6
0.4
0
10
20
40
30
OHL01660
50
60
70
80
90
100
0
20
40
60
80
100
120
LS A672, LO A672, LY A672
LG A672, LP A672
Semiconductor Group
6
1998-11-12
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible pulse handling capability
Duty cycle
D
= parameter,
T
A
= 25 C
Relative Lichtstrke
I
V
/
I
V(50 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 C
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)
LS A672, LO A672, LY A672
LG A672, LP A672
Semiconductor Group
7
1998-11-12
LS A672, LO A672, LY A672
LG A672, LP A672
Wellenlnge der Strahlung
peak
=
f (T
A
)
Wavelength at peak emission
I
F
= 10 mA
Durchlaspannung
V
F
=
f
(
T
A
)
Forward voltage
I
F
= 50 mA
Dominantwellenlnge
dom
=
f
(
T
A
)
Dominat wavelength
I
F
= 10 mA
Relative Lichtstrke
I
V
/
I
V(25 C)
=
f
(
T
A
)
Relative luminous intensity
I
F
= 50 mA
green
yellow
orange
super-red
pure-green
550
OHL02104
peak
C
A
T
0
20
40
60
80
100
570
590
610
630
650
nm
690
yellow
green
orange
super-red
pure-green
550
OHL02105
dom
C
A
T
0
20
40
60
80
100
570
590
610
630
650
nm
690
Semiconductor Group
8
1998-11-12
LS A672, LO A672, LY A672
LG A672, LP A672
Mazeichnung
(Mae in mm, wenn nicht anders angegeben)
Package Outlines
(Dimensions in mm, unless otherwise specified)
Kathodenkennung:
abgeschrgte Ecke
Cathode mark:
bevelled edge
1.1
0.9
2.54
spacing
(2.4)
2.8
2.4
4.2
3.8
(2.85)
0.7
4.2
3.8
(2.9)
3.8
3.4
(R1)
Cathode marking
Cathode
Anode
(1.4)
(0.3)
GPL06880
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