Semiconductor Group
1
11.96
VPL06899
Besondere Merkmale
q
Gehusefarbe: wei
q
als optischer Indikator einsetzbar
q
zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung
q
fr alle SMT-Bestck- und Lttechniken geeignet
q
gegurtet (12-mm-Filmgurt)
Features
q
color of package: white
q
for use as optical indicator
q
for backlighting, optical coupling into light pipes and lenses
q
suitable for all SMT assembly and soldering methods
q
available taped on reel (12 mm tape)
Hyper TOPLED
RG
Hyper-Bright LED
LS T776, LA T776, LO T776
LY T776
LS T776, LA T776, LO T776, LY T776
Semiconductor Group
2
Streuung der Lichtstrke in einer Verpackungseinheit
I
V max
/
I
V min
2.0.
Luminous intensity ratio in one packaging unit
I
V max
/
I
V min
2.0.
Typ
Type
Emissions-
farbe
Color of
Emission
Farbe der
Lichtaustritts-
flche
Color of the
Light Emitting
Area
Lichtstrke
Luminous
Intensity
I
F
= 20 mA
I
V
(mcd)
Lichtstrom
Luminous
Flux
I
F
= 20 mA
V
(mlm)
Bestellnummer
Ordering Code
LS T776-NR
LS T776-P
LS T776-Q
LS T776-R
LS T776-PS
super-red
colorless clear
25 ... 200
40 ...
80
63 ... 125
100 ... 200
40 ... 320
-
180 (typ.)
300 (typ.)
450 (typ.)
-
Q62703-Q3270
Q62703-Q3271
Q62703-Q3272
Q62703-Q3273
Q62703-Q3274
LA T776-PS
LA T776-Q
LA T776-R
LA T776-S
LA T776-QT
amber
colorless clear
40 ... 320
63 ... 125
100 ... 200
160 ... 320
63 ... 500
-
300 (typ.)
450 (typ.)
700 (typ.)
-
Q62703-Q3914
Q62703-Q3915
Q62703-Q3916
Q62703-Q3917
Q62703-Q3918
LO T776-PS
LO T776-Q
LO T776-R
LO T776-S
LO T776-QT
orange
colorless clear
40 ... 320
63 ... 125
100 ... 200
160 ... 320
63 ... 500
-
300 (typ.)
450 (typ.)
700 (typ.)
-
Q62703-Q3275
Q62703-Q3276
Q62703-Q3277
Q62703-Q3278
Q62703-Q3279
LY T776-PS
LY T776-Q
LY T776-R
LY T776-S
LY T776-QT
yellow
colorless clear
40 ... 320
63 ... 125
100 ... 200
160 ... 320
63 ... 500
-
300 (typ.)
450 (typ.)
700 (typ.)
-
Q62703-Q3280
Q62703-Q3281
Q62703-Q3282
Q62703-Q3283
Q62703-Q3284
LS T776, LA T776, LO T776, LY T776
Semiconductor Group
3
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS, LO, LA LY
Betriebstemperatur
Operating temperature range
T
op
55 ... + 100
C
Lagertemperatur
Storage temperature range
T
stg
55 ... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
C
Durchlastrom
Forward current
I
F
30
20
mA
Stostrom
Surge current
t
10
s,
D
= 0.005
I
FM
1
0.2
A
Sperrspanung
1)
Reverse voltage
1)
V
R
3
V
Verlustleistung
Power dissipation
P
tot
80
55
mW
Wrmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
Montage auf PC-board*
)
(Padgre
16 mm
2
)
mounted on PC board*
)
(pad size
16 mm
2
)
R
th JA
500
K/W
1)
Belastung in Sperrichtung sollte vermieden werden.
1)
Reverse biasing should be avoided.
*
)
PC-board: FR4
LS T776, LA T776, LO T776, LY T776
Semiconductor Group
4
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS
LA
LO
LY
Wellenlnge des emittierten Lichtes
(typ.)
Wavelength at peak emission
(typ.)
I
F
= 20 mA
peak
645
622
610
591
nm
Dominantwellenlnge
(typ.)
Dominant wavelength
(typ.)
I
F
= 20 mA
dom
632
615
605
587
nm
Spektrale Bandbreite bei 50%
I
rel max
(typ.)
Spectral bandwidth at 50%
I
rel max
(typ.)
I
F
= 20 mA
16
16
16
15
nm
Abstrahlwinkel bei 50%
I
v
(Vollwinkel)
Viewing angle at 50%
I
v
2
120
120
120
120
Grad
deg.
Durchlaspannung
(typ.)
Forward voltage
(max.)
I
F
= 20 mA
V
F
V
F
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6
V
V
Sperrstrom
(typ.)
Reverse current
(max.)
V
R
= 3 V
I
R
I
R
0.01
10
0.01
10
0.01
10
0.01
10
A
A
Temperaturkoeffizient von
dom
(
I
F
= 20 mA)
Temperature coefficient of
dom
(
I
F
= 20 mA)
TC
0.014 0.062 0.067
0.096
nm/K
Temperaturkoeffizient von
peak
,
I
F
= 20 mA
(typ.)
Temperature coefficient of
peak
,
I
F
= 20 mA
(typ.)
TC
0.14
0.13
0.13
0.13
nm/K
Temperaturkoeffizient von
V
F
, I
F
= 20 mA (typ.)
Temperature coefficient of
V
F
, I
F
= 20 mA (typ.)
TC
V
1.95 1.78 1.67 2.51 mV/K
LS T776, LA T776, LO T776, LY T776
Semiconductor Group
5
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 10 mA
Relative spectral emission
V(
) =
spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
LS T776, LA T776, LO T776, LY T776
Semiconductor Group
6
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 C
Relative Lichtstrke
I
V
/
I
V(20 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25C
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)
Relative Lichtstrke
I
V
/
I
V(25C )
=
f
(
T
A
)
Relative luminous intensity
I
F
= 20 mA
LS T776, LA T776, LO T776, LY T776
Semiconductor Group
7
Mazeichnung
(Mae in mm, wenn nicht anders angegeben)
Package Outlines
(Dimensions in mm, unless otherwise specified)
Kathodenkennung:
abgeschrgte Ecke
Cathode mark:
bevelled edge
GPL06899
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible pulse handling capability
LS, LA, LO
Duty cycle
D
= parameter,
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible pulse handling capability
LY
Duty cycle
D
= parameter,
T
A
= 25 C
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