Semiconductor Group
1
1998-09-18
Hyper 3 mm (T1) LED, Non Diffused
Hyper-Bright LED
LS 3336, LA 3336, LO 3336
LY 3336
VEX06710
Besondere Merkmale
q
nicht eingefrbtes, klares Gehuse
q
zur Einkopplung in Lichtleiter
q
als optischer Indikator einsetzbar
q
Ltspiee mit Aufsetzebene
q
gegurtet lieferbar
q
Strimpulsfest nach DIN 40839
Features
q
colorless, clear package
q
optical coupling into light pipes
q
for use as optical indicator
q
solder leads with stand-off
q
available taped on reel
q
load dump resistant acc. to DIN 40839
Semiconductor Group
2
1998-09-18
Streuung der Lichtstrke in einer Verpackungseinheit
I
V max
/
I
V min
2.0.
Luminous intensity ratio in one packaging unit
I
V max
/
I
V min
2.0.
Typ
Type
Emissionsfarbe
Color of
Emission
Gehusefarbe
Color of
Package
Lichtstrke
Luminous
Intensity
I
F
= 20 mA
I
V
(mcd)
Bestellnummer
Ordering Code
LS 3336-QT
LS 3336-R
LS 3336-S
LS 3336-T
LS 3336-RU
super-red
colorless clear
63
...
500
100
...
200
160
...
320
250
...
500
100
...
800
Q62703-Q3482
Q62703-Q3484
Q62703-Q3485
Q62703-Q3813
Q62703-Q3486
LA 3336-RU
LA 3336-S
LA 3336-T
LA 3336-U
LA 3336-SV
amber
colorless clear
100
...
800
160
...
320
250
...
500
400
...
800
160
... 1250
Q62703-Q3554
Q62703-Q3551
Q62703-Q3552
Q62703-Q3553
Q62703-Q3555
LO 3336-RU
LO 3336-S
LO 3336-T
LO 3336-U
LO 3336-SV
orange
colorless clear
100
...
800
160
...
320
250
...
500
400
...
800
160
... 1250
Q62703-Q3144
Q62703-Q3176
Q62703-Q3170
Q62703-Q3307
Q62703-Q3177
LY 3336-RU
LY 3336-S
LY 3336-T
LY 3336-U
LY 3336-SV
yellow
colorless clear
100
...
800
160
...
320
250
...
500
400
...
800
160
... 1250
Q62703-Q3487
Q62703-Q3489
Q62703-Q3490
Q62703-Q3814
Q62703-Q3491
LS 3336, LA 3336, LO 3336, LY 3336
Semiconductor Group
3
1998-09-18
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS, LO, LA LY
Betriebstemperatur
Operating temperature range
T
op
55 ... + 100
C
Lagertemperatur
Storage temperature range
T
stg
55 ... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
C
Durchlastrom
Forward current
I
F
30
20
mA
Stostrom
Surge current
t
10
s,
D
= 0.005
I
FM
1
0.2
A
Sperrspanung
1)
Reverse voltage
1)
V
R
3
V
Verlustleistung
Power dissipation
T
A
25 C
P
tot
80
55
mW
Wrmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
R
th JA
500
K/W
1)
Belastung in Sperrichtung sollte vermieden werden.
1)
Reverse biasing should be avoided.
LS 3336, LA 3336, LO 3336, LY 3336
Semiconductor Group
4
1998-09-18
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS
LA
LO
LY
Wellenlnge des emittierten Lichtes
(typ.)
Wavelength at peak emission
(typ.)
I
F
= 20 mA
peak
645
622
610
591
nm
Dominantwellenlnge
(typ.)
Dominant wavelength
(typ.)
I
F
= 20 mA
dom
632
615
605
587
nm
Spektrale Bandbreite bei 50%
I
rel max
(typ.)
Spectral bandwidth at 50%
I
rel max
(typ.)
I
F
= 20 mA
16
16
16
15
nm
Abstrahlwinkel bei 50%
I
v
(Vollwinkel)
Viewing angle at 50%
I
v
2
50
50
50
50
Grad
deg.
Durchlaspannung
(typ.)
Forward voltage
(max.)
I
F
= 20 mA
V
F
V
F
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6
V
V
Sperrstrom
(typ.)
Reverse current
(max.)
V
R
= 3 V
I
R
I
R
0.01
10
0.01
10
0.01
10
0.01
10
A
A
Temperaturkoeffizient von
dom
(
I
F
= 20 mA)
Temperature coefficient of
dom
(
I
F
= 20 mA)
TC
0.014 0.062 0.067
0.096
nm/K
Temperaturkoeffizient von
peak
,
I
F
= 20 mA
(typ.)
Temperature coefficient of
peak
,
I
F
= 20 mA
(typ.)
TC
0.14
0.13
0.13
0.13
nm/K
Temperaturkoeffizient von
V
F
, I
F
= 20 mA (typ.)
Temperature coefficient of
V
F
, I
F
= 20 mA (typ.)
TC
V
1.95 1.78 1.67 2.51 mV/K
LS 3336, LA 3336, LO 3336, LY 3336
Semiconductor Group
5
1998-09-18
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 20 mA
Relative spectral emission
V (
) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
OHL00235
400
0
20
40
60
80
100
450
500
550
600
650
700
nm
%
rel
V
yellow
orange
amber
super-red
0.8
100
1.0
80
90
70
0.4
0.6
0
0
0.2
0.4
60
50
40
30
20
0.6
0.8
10
1.0
0
100
20
40
80
60
120
OHL01646
LS 3336, LA 3336, LO 3336, LY 3336
Semiconductor Group
6
1998-09-18
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25C
Relative Lichtstrke
I
V
/
I
V(20 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25C
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)
Relative Lichtstrke
I
V
/
I
V(25C )
=
f
(
T
A
)
Relative luminous intensity
I
F
= 20 mA
V
OHL00232
F
F
10
-1
1.4
1.8
2.2
2.6
3.0 V 3.4
0
10
1
10
10
2
5
5
mA
5
1.0
OHL00233
F
-1
10
V
10
-3
-2
-1
0
1
10
10
10
10
10
0
10
1
10
2
5
5
5
5
5
mA
(20 mA)
V
superred
yellow
orange/amber
OHL00248
A
0
F
0
20
40
60
80 C 100
mA
5
10
15
20
25
30
35
yellow
T
OHL00238
0
V
-20
0
20
40
60
C
100
orange
A
0.4
0.8
1.2
1.6
2.0
V
(25 C)
yellow
amber
super-red
super-red
amber
yellow
orange
LS 3336, LA 3336, LO 3336, LY 3336
Semiconductor Group
7
1998-09-18
LS 3336, LA 3336, LO 3336, LY 3336
Mazeichnung
(Mae in mm, wenn nicht anders angegeben)
Package Outlines
(Dimensions in mm, unless otherwise specified)
Kathodenkennzeichnung:
Krzerer Ltspie
Cathode mark:
Short solder lead
0.4
0.6
3.1
3.4
Area not flat
5.7
6.1
2.7
2.9
4.8
4.4
3.7
3.5
27.0
29.0
spacing
2.54mm
0.8
0.4
0.4
0.7
0.4
0.6
1.2
1.8
GEX06951
0.9
1.1
Cathode
Approx. weight 0.15 g
Cathode
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible pulse handling capability
LS, LA, LO
Duty cycle
D
= parameter,
T
A
= 25 C
OHL00322
1
10
-2
10
F
A
5
10
-5
p
t
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
s
F
T
p
t
=
D
p
t
T
0.5
0.2
0.1
D =
0.005
0.01
0.05
0.02
10
-1
10
0
5
5
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible pulse handling capability
LY
Duty cycle
D
= parameter,
T
A
= 25 C
OHL00316
5
0
10
-2
10
F
A
10
-1
5
10
-5
p
t
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
s
F
T
p
t
=
D
p
t
T
0.5
0.2
0.1
D =
0.005
0.01
0.05
0.02
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