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Электронный компонент: Q62703-Q3657

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Semiconductor Group
1
11.96
VPL06923
Besondere Merkmale
q
Gehusefarbe: wei
q
als optischer Indikator einsetzbar
q
zur Hintergrundbeleuchtung, Lichtleiter- und
Linseneinkopplung
q
fr alle SMT-Bestck- und Lttechniken geeignet
q
gegurtet (8-mm-Filmgurt)
Features
q
color of package: white
q
for use as optical indicator
q
for backlighting, optical coupling into light pipes and lenses
q
suitable for all SMT assembly and soldering methods
q
available taped on reel (8 mm tape)
Streuung der Lichtstrke in einer Verpackungseinheit
I
V max
/
I
V min
2.0.
Luminous intensity ratio in one packaging unit
I
V max
/
I
V min
2.0.
Typ
Type
Emissions-
farbe
Color of
Emission
Farbe der
Lichtaustritts-
flche
Color of the
Light Emitting
Area
Lichtstrke
Luminous
Intensity
I
F
= 20 mA
I
V
(mcd)
Lichtstrom
Luminous
Flux
I
F
= 20 mA
V
(mlm)
Bestellnummer
Ordering Code
LS C876-NO
super-red
colorless clear
25 (60 typ.) 180 (typ.)
Q62703-Q3659
LA C876-PO
amber
colorless clear
40
(100 typ.)
300 (typ.)
Q62703-Q3658
LO C876-PO
orange
colorless clear
40
(100 typ.)
300 (typ.)
Q62703-Q3657
LY C876-PO
yellow
colorless clear
40
(100 typ.)
300 (typ.)
Q62703-Q3656
Hyper Mini SIDELED
Hyper-Bright LED
LS C876, LA C876
LO C876, LY C876
Semiconductor Group
2
LS C876, LA C876, LO C876, LY C876
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS, LA, LO
LY
Betriebstemperatur
Operating temperature range
T
op
55... + 100
C
Lagertemperatur
Storage temperature range
T
stg
55... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
C
Durchlastrom
Forward current
I
F
30
20
mA
Stostrom
Surge current
t
10
s, D = 0.005
I
FM
to be defined
A
Sperrspanung
1)
(
I
F
= 10
A)
Reverse voltage
1)
V
R
3
V
Verlustleistung
Power dissipation,
T
A
25
C
P
tot
80
55
mW
Wrmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
Montage auf PC-board
*)
(Padgre
16 mm
2
)
mounted on PC board
*)
(pad size
16 mm
2
)
R
thJA
630
K/W
1)
Belastung in Sperrichtung sollte vermieden werden.
1)
Reverse biasing should be avoided.
*)
PC-board: FR4
Semiconductor Group
3
LS C876, LA C876, LO C876, LY C876
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS
LA
LO
LY
Wellenlnge des emittierten Lichtes
(typ.)
Wavelength at peak emission
(typ.)
I
F
= 20 mA
peak
645
622
610
591
nm
Dominantwellenlnge
(typ.)
Dominant wavelength
(typ.)
I
F
= 20 mA
dom
632
615
605
587
nm
Spektrale Bandbreite bei 50%
I
rel max
(typ.)
Spectral bandwidth at 50%
I
rel max
(typ.)
I
F
= 20 mA
16
16
16
15
nm
Abstrahlwinkel bei 50%
I
v
(Vollwinkel)
Viewing angle at 50%
I
v
2
120
120
120
120
Grad
deg.
Durchlaspannung
(typ.)
Forward voltage
(max.)
I
F
= 20 mA
V
F
V
F
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6
V
V
Sperrstrom
(typ.)
Reverse current
(max.)
V
R
= 3 V
I
R
I
R
0.01
10
0.01
10
0.01
10
0.01
10
A
A
Temperaturkoeffizient von
dom
(
I
F
= 20 mA)
Temperature coefficient of
dom
(
I
F
= 20 mA)
TC
0.014 0.062 0.067
0.096
nm/K
Temperaturkoeffizient von
peak
,
I
F
= 20 mA
(typ.)
Temperature coefficient of
peak
,
I
F
= 20 mA
(typ.)
TC
0.14
0.13
0.13
0.13
nm/K
Temperaturkoeffizient von
V
F
, I
F
= 20 mA (typ.)
Temperature coefficient of
V
F
, I
F
= 20 mA (typ.)
TC
V
1.95 1.78 1.67 2.51 mV/K
Semiconductor Group
4
LS C876, LA C876, LO C876, LY C876
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25C,
I
F
= 10 mA
Relative spectral emission
V(
) =
spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
Semiconductor Group
5
LS C876, LA C876, LO C876, LY C876
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25C
Relative Lichtstrke
I
V
/
I
V(20 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25C
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)
Relative Lichtstrke
I
V
/
I
V(25C )
=
f
(
T
A
)
Relative luminous intensity
I
F
= 20 mA
Semiconductor Group
6
LS C876, LA C876, LO C876, LY C876
Mazeichnung
(Mae in mm, wenn nicht anders angegeben)
Package Outlines
(Dimensions in mm, unless otherwise specified)
GPL06930
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible pulse handling capability
LS, LA, LO
Duty cycle
D
= parameter,
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible pulse handling capability
LY
Duty cycle
D
= parameter,
T
A
= 25 C