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Электронный компонент: Q62703-Q3836

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Semiconductor Group
1
11.96
LC 5 mm (T1
3
/
4
) LED, Diffused
Low Current LED
LS 5469, LY 5469, LG 5469
Streuung der Lichtstrke in einer Verpackungseinheit
I
V max
/
I
V min
2.0.
Luminous intensity ratio in one packaging unit
I
V max
/
I
V min
2.0.
Typ
Type
Emissionsfarbe
Color of
Emission
Gehusefarbe
Color of
Package
Lichtstrke
Luminous
Intensity
I
F
= 2 mA
I
V
(mcd)
Bestellnummer
Ordering Code
LS 5469-EH
LS 5469-G
LS 5469-H
LS 5469-GK
super-red
red diffused
0.63 ... 5.0
1.60 ... 3.2
2.50 ... 5.0
1.60 ... 12.5
Q62703-Q1751
Q62703-Q2344
Q62703-Q2345
Q62703-Q3833
LY 5469-EH
LY 5469-F
LY 5469-G
LY 5469-H
LY 5469-FJ
yellow
yellow diffused
0.63 ... 5.0
1.00 ... 2.0
1.60 ... 3.2
2.50 ... 5.0
1.00 ... 8.0
Q62703-Q1752
Q62703-Q3834
Q62703-Q3835
Q62703-Q3836
Q62703-Q3837
LG 5469-EH
LG 5469-F
LG 5469-G
LG 5469-FJ
green
green diffused
0.63 ... 5.0
1.00 ... 2.0
1.60 ... 3.2
1.00 ... 8.0
Q62703-Q1753
Q62703-Q3856
Q62703-Q3857
Q62703-Q3858
VEX06713
Besondere Merkmale
q
eingefrbtes, diffuses Gehuse
q
als optischer Indikator einsetzbar
q
hohe Lichtstrke bei kleinen Stmen (typ. 2 mA)
q
Ltspiee ohne Aufsetzebene
q
gegurtet lieferbar
q
Strimpulsfest nach DIN 40839
Features
q
colored, diffused package
q
for use as optical indicator
q
high luminous intensity at low currents (typ. 2 mA)
q
solder leads without stand-off
q
available taped on reel
q
load dump resistant acc. to DIN 40839
Semiconductor Group
2
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Betriebstemperatur
Operating temperature range
T
op
55 ... + 100
C
Lagertemperatur
Storage temperature range
T
stg
55 ... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
C
Durchlastrom
Forward current
I
F
7.5
mA
Stostrom
Surge current
t
10
s, D = 0.005
I
FM
150
mA
Sperrspannung
Reverse voltage
V
R
5
V
Verlustleistung
Power dissipation
T
A
25 C
P
tot
20
mW
Wrmewiderstand
Thermal resistance
Sperrschicht / Luft
Junction / air
R
th JA
500
K/W
LS 5469, LY 5469, LG 5469
Semiconductor Group
3
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS
LY
LG
Wellenlnge des emittierten Lichtes (typ.)
Wavelength at peak emission
(typ.)
I
F
= 7.5 mA
peak
635
586
565
nm
Dominantwellenlnge
(typ.)
Dominant wavelength
(typ.)
I
F
= 7.5 mA
dom
628
590
570
nm
Spektrale Bandbreite bei 50 %
I
rel max
(typ.)
Spectral bandwidth at 50 %
I
rel max
(typ.)
I
F
= 7.5 mA
45
45
25
nm
Abstrahlwinkel bei 50 %
I
V
(Vollwinkel)
Viewing angle at 50 %
I
V
2
50
50
50
Grad
deg.
Durchlaspannung
(typ.)
Forward voltage
(max.)
I
F
= 2 mA
V
F
V
F
1.8
2.6
2.0
2.7
1.9
2.6
V
V
Sperrstrom
(typ.)
Reverse current
(max.)
V
R
= 5 V
I
R
I
R
0.01
10
0.01
10
0.01
10
A
A
Kapazitt
(typ.)
Capacitance
V
R
= 0 V,
= 1 MHz
C
0
3
3
15
pF
Schaltzeiten:
Switching times:
I
V
from 10 % to 90 %
(typ.)
I
V
from 90 % to 10 %
(typ.)
I
F
= 100 mA,
t
P
= 10
s,
R
L
= 50
t
r
t
f
200
150
200
150
450
200
ns
ns
LS 5469, LY 5469, LG 5469
Semiconductor Group
4
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 7.5 mA
Relative spectral emission
V (
) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation characteristic
LS 5469, LY 5469, LG 5469
Semiconductor Group
5
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
P
)
Permissible pulse handling capability
Duty cycle D = parameter,
T
A
= 25 C
LS 5469, LY 5469, LG 5469
Relative Lichtstrke
I
V
/
I
V(2 mA)
=
f
(
I
F
)
Relative luminous intensity
T
A
= 25 C
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)