Semiconductor Group
1
07.96
The position sensor KSY 10 is an ion-implanted Hall generator made of mono-crystalline
GaAs material. It is enclosed in a tubular plastic package with four tags.
When operating the sensor with a constant supply current, the output Hall voltage is
directly proportional to the magnetic field acting upon the sensor. This sensor is
outstanding for its high inductive sensitivity and very low temperature coefficient.
Type
Ordering Code
KSY 10
Q62705-K38
Hall Sensor
KSY 10
Dimensions in mm
Features
High sensitivity
High operating temperature range
High linearity
Low offset voltage
Low
TC
of sensitivity and internal
resistance
Plastic-encapsulated miniature
package
Typical applications
Detection of speed
Detection of position
Detection of diaphragm position in
pressure pickup cans
Magnetic field measurement at
permanent magnets
Magnetic field measurement at
magnetic yokes for current
determination
Magnetic field measurement in dc
motors for contactless commutation
Semiconductor Group
2
KSY 10
The Hall sensor's active area is approx. 0.2 mm
0.2 mm. It is placed approx. 0.35 mm
below the plastic surface of the front side and is concentric towards the adjusting
marking on the rear. The chip carrier is non-magnetic.
The position sensor KSY 10 is particularly suitable for sensing the position of magnets
and of softmagnetic material, resp., if the sensor itself is mounted on a magnet.
Maximum ratings
Characteristics (
T
A
= 25
C)
Parameter
Symbol
Value
Unit
Operating temperature
T
A
40 / + 150
C
Storage temperature
T
stg
50 / + 160
C
Supply current
I
1
7
mA
Thermal conductivity
1)
G
th A
2.8
mW/K
Nominal supply current
I
1N
5
mA
Open-circuit sensitivity
K
B0
170
...
230
V/AT
Open-circuit Hall voltage
I
1
=
I
1N
,
B
= 0.1 T
V
20
85
...
130
mV
Ohmic offset voltage
2)
I
1
=
I
1N
,
B
= 0 T
V
R0
25
mV
Linearity of Hall voltage
B
= 0
...
0.5 T
B
= 0
...
1 T
F
L
0.2
0.7
%
%
Supply and Hall-side internal resistance
B
= 0 T
R
10, 20
900
...
1200
Temperature coefficient of the
open-circuit Hall voltage
I
1
=
I
1N
,
B
= 0.2 T
TC
V20
approx. 0.05
%/K
Temperature coefficient of the internal
resistance
B
= 0.2 T
TC
R10, R20
0.1
...
0.18
%/K
1) Thermal conductivity chip-ambient when soldered, in still air
2) Offset voltage selection upon request
Semiconductor Group
3
KSY 10
Open-circuit sensitivity
K
B0
versus temperature
referred to
K
B0
at
T
A
= 25
C
Internal resistance
R
20
versus magnetic field referred to
R
20
at
B
= 0 T and
T
A
= 25
C
Internal resistance
R
20
versus temperature referred to
R
20
at
T
A
= 25
C, Parameter: Flux density
B
Max. permissible supply current
I
1
versus temperature
T
A
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