SOT-89
Semiconductor Group
1
1998-04-29
Uni- and Bipolar Hall IC Switches for
Magnetic Field Applications
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Bipolar IC
w
New type
TLE 4905/35/35-2/45-2 (Unipolar/Bipolar Magnetic Field Switches) have been designed
specifically for automotive and industrial applications. Reverse polarity protection is
included on-chip as is output protection against negative voltage transients.
Typical applications are position/proximity indicators, brushless DC motor commutation,
rotational indexing etc.
Type
Ordering Code
Package
w
TLE 4905 G
Q62705-K402
SOT-89
w
TLE 4935 G
Q62705-K404
SOT-89
w
TLE 4935-2 G
Q62705-K405
SOT-89
w
TLE 4945-2 G
Q62705-K403
SOT-89
Features
Temperature compensated magnetic performance
Digital output signal
For unipolar and alternating magnetic fields
Large temperature range
Protection against reversed polarity
Output protection against electrical disturbances
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Semiconductor Group
2
1998-04-29
Pin Configuration
(top view)
Figure 1
Pin Definitions and Funtions
Pin No.
Symbol
Function
1
V
S
Supply voltage
2
GND
Ground
3
Q
Output
1
AEP02150
2.25
0.2
0.2
1
2
3
sensitive area
Center of
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Semiconductor Group
3
1998-04-29
Circuit Description
The circuit includes Hall generator, amplifier and Schmitt-Trigger on one chip. The
internal reference provides the supply voltage for the components. A magnetic field
perpendicular to the chip surface induces a voltage at the hall probe. This voltage is
amplified and switches a Schmitt-trigger with open-collector output. A protection diode
against reverse power supply is integrated.
The output is protected against electrical disturbances.
Figure 2
Block Diagram
AEB01243
Hall-
Generator
V
S
V
Ref
Output
Stage
Schmitt-
Trigger
Amplifier
Threshold
Generator
V
S
1
Q
3
2
GND
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Semiconductor Group
4
1998-04-29
Functional Description Unipolar Type TLE 4905 (figure 3 and 4)
When a positive magnetic field is applied in the indicated direction (figure 3) and the
turn-on magnetic induction
B
OP
is exceeded, the output of the Hall-effect IC will conduct
(Operate Point). When the magnetic field is reduced to a value smaller than the release
point, the output of the IC turns off (Release Point; figure 4).
Figure 3
Sensor/Magnetic-Field Configuration
Figure 4
Switching Characteristics Unipolar Type
AES01231
S
N
Branded Side
+
V
S
-
V
Q
+
AED01420
Induction
Output Voltage
0
B
RP
OP
B
B
t
V
QH
V
QL
Q
V
t
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Semiconductor Group
5
1998-04-29
Functional Description Bipolar Type TLE 4935/35-2/45-2 (figure 5 and 6)
When a positive magnetic field is applied in the indicated direction (figure 5) and the
turn-on magnetic induction
B
OP
is exceeded, the output of the Hall-effect IC will conduct
(Operate Point). The output state does not change unless a reverse magnetic field
exceeding the turn-off magnetic induction |
B
RP
| is exceeded. In this case the output will
turn off (Release Point; figure 6).
Figure 5
Sensor/Magnetic-Field Configuration
Figure 6
Switching Characteristics Bipolar Type
AES01231
S
N
Branded Side
+
V
S
-
V
Q
+
AED01421
Induction
Output Voltage
0
B
RP
OP
B
B
t
V
QH
V
QL
Q
V
t
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Semiconductor Group
6
1998-04-29
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Note: In the operating range the functions given in the circuit description are fulfilled.
Absolute Maximum Ratings
T
j
= 40 to 125
C
Parameter
Symbol
Limit Values Unit Remarks
min.
max.
Supply voltage
V
S
40
32
V
Supply voltage
V
S
40
V
t
< 400 ms;
= 0.1
Output voltage
V
Q
32
V
Output current
I
Q
100
mA
Output reverse current
I
Q
100
mA
Junction temperature
T
j
40
125
C
Storage temperature
T
stg
50
150
C
Thermal resistance
R
th JA
100
K/W
Operating Range
Parameter
Symbol
Limit Values Unit Remarks
min.
max.
Supply voltage
V
S
4.0
18
V
Junction temperature
T
j
40
125
C
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Semiconductor Group
7
1998-04-29
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at
T
j
= 25
C and
the given supply voltage.
Note: Moderate changes may occur during the development process or customer
discussion.
AC/DC Characteristics
4.0 V
V
S
18 V; 40 C
T
j
125 C
Parameter
Symbol
Limit Values
Unit Test Condition
Test
Circuit
min.
typ.
max.
Supply current
I
SHigh
I
SLow
2.5
3.5
7
8
mA
mA
B
<
B
RP
B
>
B
OP
I
Q
= 40 mA
1
1
Output saturation
voltage
V
QSat
0.25
0.5
V
I
Q
= 40 mA
1
Output leakage
current
I
QL
10
A
V
Q
= 18 V
1
Rise/fall time
t
r
/
t
f
1
s
R
L
= 1.2 k
C
L
33 pF
1
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Semiconductor Group
8
1998-04-29
Note: The listed characteristics are ensured over the operating range of the integrated circuit.
Typical characteristics specify mean values expected over the production spread. If not
otherwise specified, typical characteristics apply at
T
j
= 25
C and the given supply voltage.
Magnetic Characteristics
4.0 V
V
S
18 V
Parameter
Symbol
Limit Values
Unit
TLE 4905
unipolar
TLE 4935
bipolar latch
TLE 4935-2
bipolar latch
TLE 4945-2
bipolar
switch
min.
max.
min.
max.
min.
max.
min.
max.
Junction Temperature
T
j
= 40 C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(B
OP
-B
RP
)
B
OP
B
RP
B
HY
7.5
5.5
2
19
17
6.5
10
20
20
20
10
40
15
27
30
27
15
54
3
6
1
6
3
5
mT
mT
mT
Junction Temperature
T
j
= 25 C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(B
OP
-B
RP
)
B
OP
B
RP
B
HY
7
5
2
18
16
6
10
20
20
20
10
40
14
26
28
26
14
52
3
6
1
6
3
5
mT
mT
mT
Junction Temperature
T
j
= 85 C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(B
OP
-B
RP
)
B
OP
B
RP
B
HY
6.5
4.5
2
17.5
15
5.5
10
20
20
20
10
40
13
26
26
26
13
52
3
6
1
6
3
5
mT
mT
mT
Junction Temperature
T
j
= 125 C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(B
OP
-B
RP
)
B
OP
B
RP
B
HY
6
4
2
17
14
5
10
20
20
20
10
40
12
25
24
25
12
50
3
6
1
6
3
5
mT
mT
mT
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Semiconductor Group
9
1998-04-29
Figure 7
Test Circuit 1
Unipolar Type TLE 4905
Bipolar Type TLE 4935
AES01244
S
V
S
V
4.7 nF
TLE
Q
GND
4905/35/35-2/45-2
S
Q
R
L
3
2
1
C
L
+
-
AED01422
Q
B
V
V
QH
V
QL
0
B
RP
OP
B
B
HY
HY
B
B
OP
RP
B
0
QL
V
QH
V
V
B
Q
AED01246
Q
t
0.9
0.1
t
r
f
t
V
V
QH
V
QH
V
QH
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Semiconductor Group
10
1998-04-29
Figure 8
Application Circuit
AES01247
S
V
4.7 nF
Q
GND
1.2 k
4.7 nF
Line
V
S
Mainframe
Signal
Sensor
3
2
1
4905/35/35-2/45-2
TLE
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Semiconductor Group
11
1998-04-29
Quiescent Current Difference
versus Temperature
Quiescent Current versus
Junction Temperature
Saturation Voltage versus
Output Current
TLE 4905 Operate-and Release-Point
versus Junction Temperature
If not otherwise specified, all curves reflect typical values at
T
j
= 25
C and
V
S
= 12 V.
AED01459
-40
S
0
50
100
200
0.25
0.5
0.75
1.0
mA
Q
= 40 mA
150 C
S
SLow
SHigh
T
j
0
=
-
AED01249
0
2
4
6
8
V
Q
= High
mA
S
-50
0
50
100
200
V
S
= 18 V
= 4.0 V
S
V
C
T
j
AED01461
0
V
Q
20
40
60
100
0.2
V
Q
mA
0.4
0.6
0.8
1.0
1.2
= -40 C
= 125 C
T
j
T
j
0
4.0 V
S
_
<V
18 V
_
<
AED01424
0
mT
B
-40
T
C
j
5
10
15
20
25
0
50
100
200
B
OPmax
RPmax
B
B
OPtyp
RPtyp
B
B
OPmin
RPmin
B
4.0 V
S
_
<V
18 V
_
<
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Semiconductor Group
12
1998-04-29
TLE 4935 Operate-and Release-Point
versus Junction Temperature
TLE 4905 Hysteresis versus Junction
Temperature
TLE 4935-2 Operate-and Release-Point
versus Junction Temperature
TLE 4945-2 Operate-and Release-Point
versus Junction Temperature
AED01423
-20
mT
B
-40
T
C
j
-10
0
10
20
30
0
50
100
200
B
OPmax
RPmax
B
B
OPtyp
RPtyp
B
B
OPmin
RPmin
B
4.0 V
S
_
<V
18 V
_
<
AED01426
0
mT
B
-40
T
C
j
0
50
100
200
HYmax
B
HYtyp
B
HYmin
B
2
4
6
8
4.0 V
S
_
<V
18 V
_
<
AED01640
-30
mT
-40
C
0
50
100
200
B
OPmax
RPmax
B
B
OPtyp
RPtyp
B
B
OPmin
RPmin
B
-20
-10
0
10
20
30
j
T
B
4.0 V
<
18 V
V
S
_
<
_
AED02353
-18
mT
-40
C
0
50
100
200
B
OPmax
RPmax
B
B
OPtyp
RPtyp
B
B
OPmin
RPmin
B
-12
-6
0
6
12
18
j
T
B
4.0 V
<
18 V
V
S
_
<
_
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Semiconductor Group
13
1998-04-29
Package Outline
Package Information
+0.1
2.75
1.6
0.2 max
1.5
45
4.5
4.25 max
2.6 max
0.65 max
0.25 min
0.2
1.0
10
max
3
1.5
-0.15
acc. to
+0.2
DIN 6784
0.25
1)
Ejector pin marking possible
1)
1
SOT-89 (SMD)
(Plastic Small Outline Transistor Package)
GP
S05
558
d
AEA02487
d: Distance chip to upper side of IC
SOT-89: 1.05 mm
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book "Package Information".
Dimensions in mm
SMD = Surface Mounted Device
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