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Электронный компонент: Q67000-A9140

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P-TO220-7-1
P-DSO-20-6
P-TO220-7-8
5-V Low-Drop Voltage Regulator
TLE 4261-2
Semiconductor Group
1
1998-11-01
Features
High accuracy 5 V
2%
Very low-drop voltage
Very low quiescent current
Low starting-current consumption
Proof against reverse polarity
Input voltage up to 42 V
Overvoltage protection up to 65 V (
400 ms)
Short-circuit-proof
External setting of reset delay
Integrated watchdog circuit
Wide temperature range
Overtemperature protection
Suitable for automotive use
EMC proofed (100 V/m)
w
Please also refer to the new pin compatible device
TLE 4271
Type
Ordering Code
Package
w
TLE 4261-2
Q67000-A9110
P-TO220-7-1
w
TLE 4261-2 G
Q67000-A9140
P-DSO-20-6
(SMD)
w
TLE 4261-2 GL
Q67006-A9193
P-TO220-7-8
(SMD)
Functional Description
TLE 4261-2 is a high accuracy 5-V low-drop voltage regulator in a P-TO220-7 or in a P-
DSO package. The maximum input voltage is 42 V (65 V/
400 ms). The device can
produce an output current of more than 500 mA. It is short-circuit-proof and incorporates
temperature protection that disables the circuit at impermissibly high temperatures.
TLE 4261-2
Semiconductor Group
2
1998-11-01
Application Description
The IC regulates an input voltage
V
I
in the range
6 V <
V
I
< 40 V to
V
Qrated
= 5.0 V. A
reset signal is generated for an output voltage
V
O
of
< 4.75 V. The reset delay can be
set with an external capacitor. A connected microprocessor is monitored by the
integrated watchdog circuit; if pulses are missing, the reset output is set low. The pulse
repetition rate can be set within wide limits with the capacitor for reset delay. If this input
is connected to a voltage of > 6 V, the watchdog function is deactivated. The device also
features an inhibit input, which is activated by a voltage of > 6 V
and then works on this
input through internal hysteresis up to approx. 3 V. A voltage of < 2 V on the inhibit input
turns off the regulator, current drain then dropping to max. 50
A.
Design Notes for External Components
The input capacitor
C
I
causes a low-resistant powerline and limits the rise times of the
input voltage. The IC is protected against rise times up to 100 V/
s. It is possible to damp
the tuned circuit consisting of supply inductance and input capacitance with a resistor of
approx. 1
in series to
C
I
.
The output capacitor maintains the stability of the regulating loop. Stability is guaranteed
with a rating of 22
F min. at an ESR of 3
max. in the operating temperature range.
Circuit Description
The control amplifier compares a reference voltage, which is kept highly accurate by
resistance adjustment, to a voltage that is proportional to the output voltage and controls
the base of the series PNP transistor via a buffer. Saturation control as a function of the
load current prevents any over-saturation of the power element. If the output voltage
drops below 95.5% of its typical value for more than 2
s, a reset signal is triggered on
pin 3 and an external capacitor discharged on pin 5. The reset signal is not cancelled
until the voltage on the capacitor has exceeded the upper switching threshold
V
DT
. A
positive-edge-triggered watchdog circuit monitors the connected microprocessor and
will likewise trigger a reset if pulses are missing. The IC can be disabled by a low level
on the inhibit input and the current consumption drops to
<
50
A.
The IC also incorporates a number of circuits for protection against:
Overload
Overvoltage
Overtemperature
Reverse polarity
TLE 4261-2
Semiconductor Group
3
1998-11-01
Pin Configuration
(top view)
Pin Definitions and Functions
Pin No. Symbol Function
1
V
I
Input voltage; block a capacitor directly to ground on the IC. The
capacitor rating will depend on the vihicle electric system.
Oscillation of the output voltage can be damped by a resistor of
approx. 1
in series with the input capacitor.
2
INH
Inhibit; switches off the IC when low.
3
QRES
Reset output; open collector output controlled by the reset delay.
4
GND
Ground
5
DRES
Reset delay; wired to ground using a capacitor.
6
Watch
Watchdog; monitors the microprocessor when active.
7
V
Q
5-V output; block to ground using a capacitor of
22-
F. ESR is
3
in the operating temperature range.
TLE 4261-2
TLE 4261-2 GL
AEP00592
V
INH
QRES
GND
DRES
Watch
V
Q
4
3
2
1
5
6
7
TLE 4261-2
Semiconductor Group
4
1998-11-01
Pin No. Symbol Function
18
V
I
Input voltage; block a capacitor directly to ground on the IC. The
capacitor rating will depend on the vihicle electric system.
Oscillation of the output voltage can be damped by a resistor of
approx. 1
in series with the input capacitor.
20
INH
Inhibit; switches off the IC when low.
3
QRES
Reset output; open collector output controlled by the reset delay.
4 -7,
14 - 17
GND
Ground
9
DRES
Reset delay; wired to ground using a capacitor.
11
Watch
Watchdog; monitors the microprocessor when active.
12
V
Q
5-V output; block to ground using a capacitor of
22-
F. ESR is
3
in the operating temperature range.
1, 2, 8,
10, 13,
19
N.C.
Not connected
TLE 4261-2 G
AEP01182
GND
Q
V
V
N.C.
N.C.
13
14
10
15
9
16
8
17
N.C.
7
18
6
19
GND
5
20
4
3
2
1
GND
GND
N.C.
DRES
11
12
QRES
GND
GND
N.C.
GND
GND
Watch
N.C.
INH
TLE 4261-2
Semiconductor Group
5
1998-11-01
Block Diagram
Overvoltage
Monitoring
Saturation
Control and
Protection
RESET
Generator
Watchdog
Temperature
Sensor
Adjustment
BANDGAP
Reference
Inhibit
-
+
7
(12)
5
(9)
3
(3)
(11) 6
4
(14-17)
(4-7)
2
(20)
1
(18)
Input
Inhibit
GND
Watchdog
Output
RESET
Delay
RESET
Output
AEB00002
Control
Amplifier
Buffer
TLE 4261-2
Semiconductor Group
6
1998-11-01
Absolute Maximum Ratings
T
J
= 40 to 150
C
Parameter
Symbol
Limit Values
Unit
Remarks
min.
max.
Input
Input voltage
V
I
42
42
V
V
I
65
V
t
400 ms
Input current
I
I
1.6
A
Inhibit
Voltage
V
2
0.3
42
V
Current
I
2
5
mA
Reset Output
Voltage
V
R
0.3
42
V
Current
I
R
internally limited
Ground
Current
I
GND
0.5
A
Reset Delay
Voltage
V
D
0.3
42
V
Current
I
D
internally limited
Output
Differential voltage
V
I
V
Q
5.25
V
I
V
Current
I
Q
1.4
A
TLE 4261-2
Semiconductor Group
7
1998-11-01
Temperature
Junction temperature
T
j
150
C
Storage temperature
T
stg
50
150
C
Operating Range
Input voltage
V
I
1)
32
V
Junction temperature
T
j
40
150
C
Thermal Resistance
System-air
R
thSA
65 (70)
2)
K/W
System-case
R
thSC
3 (15)
2)
K/W
1)
see diagram
2)
Figures in parenthesis refer to TLE 4261-2 G.
Absolute Maximum Ratings (cont'd)
T
J
= 40 to 150
C
Parameter
Symbol
Limit Values
Unit
Remarks
min.
max.
TLE 4261-2
Semiconductor Group
8
1998-11-01
Characteristics
V
I
= 13.5 V;
T
j
= 25
C;
V
5
6 V (unless otherwise specified)
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Normal Operation
Output voltage
V
Q
4.9
5.0
5.1
V
I
Q
= 100 mA
40
C
T
j
125
C
Output current
I
Q
50
A
0 V
V
I
2 V;
V
2
=
V
I
;
40
C
T
j
125
C
Output current
I
Q
500
1000
mA
V
I
= 17 V to 28 V
Current consumption
I
q
=
I
I
I
Q
I
q
3.5
mA
I
Q
= 0 mA,
V
W
>6 V
Current consumption
I
q
=
I
I
I
Q
I
q
10
mA
6 V
V
I
28 V
I
Q
= 150 mA
Current consumption
I
q
=
I
I
I
Q
I
q
5.0
65
mA
6 V
V
I
28 V
I
Q
= 500 mA
Current consumption
I
q
=
I
I
I
Q
I
q
40
80
mA
V
I
6 V
I
Q
= 500 mA
Drop voltage
V
DR
0.35 0.5
V
V
I
= 4.5 V;
I
Q
= 0.5 A
Drop voltage
V
DR
0.2
0.3
V
V
I
= 4.5 V;
I
Q
= 0.15 A
Load regulation
V
Q
15
35
mV
25 mA
I
Q
500 mA
Supply-voltage regulation
V
Q
15
50
mV
V
I
6 V to 28 V;
I
Q
= 100 mA
Supply-voltage regulation
V
Q
5
25
mV
V
I
6 V to 16 V;
I
Q
= 100 mA
Ripple rejection
SVR
54
dB
f
= 100 Hz;
V
r
= 0.5 V
SS
Temperature drift of output
voltage
VQ
2
10
4
1/
C
TLE 4261-2
Semiconductor Group
9
1998-11-01
Inhibit Operation
Current consumption
I
1
50
A
V
2
= 2 V;
I
Q
= 0
Current consumption
I
2
100
A
V
2
= 6 V
Switching threshold for
inhibit
V
2
5.0
5.5
6.0
V
IC turned ON
Switching threshold for
inhibit
V
2
2.0
2.7
3.7
V
IC turned OFF
Reset Generator
Switching threshold
V
RT
94
95.5 97
%
in % of
V
Q
;
I
Q
> 500 mA;
V
I
= 6 V
Saturation voltage, reset
output
V
R
0.25 0.40
V
I
R
= 1 mA
Reverse current
I
R
1
A
V
R
= 5 V
Charge current
I
D
18.75 25
31.25
A
V
C
= 1.5 V
Switching threshold
V
ST
0.9
1
1.1
V
Delay switching threshold
V
DT
2.25
2.50 2.75
V
Saturation voltage, delay
output
V
C
100
mV
V
I
= 4.5 V and
I
d
Delay time
t
D
10
ms
C
D
= 100 nF
Delay time
t
t
2
s
Characteristics (cont'd)
V
I
= 13.5 V;
T
j
= 25
C;
V
5
6 V (unless otherwise specified)
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
TLE 4261-2
Semiconductor Group
10
1998-11-01
Watchdog
Turn-OFF voltage
V
W
5.2
5.6
6.0
V
Discharge current
I
CD
5.6
7.5
9.4
A
V
C
= 1.5 V
Switching voltage
V
CD
2.95
3.05 3.15
V
Pulse intervall
T
W
35
ms
C
D
= 100 nF
General Data
Turn-Off voltage
V
IOFF
41
43
45
V
I
Q
< 1 mA
Turn-Off hysteresis
V
I
6.5
V
Leakage current
I
QS
50
A
V
Q
=
0 V;
V
I
=
45 V
Reverse output current
I
QR
1.5
mA
V
Q
=
5 V;
V
I
and
V
2
open
Characteristics (cont'd)
V
I
= 13.5 V;
T
j
= 25
C;
V
5
6 V (unless otherwise specified)
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
TLE 4261-2
Semiconductor Group
11
1998-11-01
Application Circuit
Test Circuit
AES01455
TLE 4261-2
nF
22
F
1
7
Input
6 V to 40 V
Output
RESET
From C
KL15 7 V to 18 V
2
6
5
3
4
470
100 nF
100 k
k
4.7
Microcontroller
From
AES01508
TLE 4261-2
1000 F
V
+
V
R
R
V
Q
V
d
GND
Q
SC
C
D
nF
100
V
C
/
R
22 F
4.7 k
1
7
3
5
4
Q
V
-
V
V
Dr
=
SVR
V
R
V
Q
470 nF
= 20 log
2
3
V
2
6
W
V
TLE 4261-2
Semiconductor Group
12
1998-11-01
Time Responce in Watchdog Condition
Timing with Watchdog OFF
3.3 V
Overvoltage
Spike
Over-
voltage
=
AET00593
V
V
OFF
RT
V
Over-
temperature
Shortcircuit
on Output
Undervoltage
Secondary
Spike
d
d
V
t
C
D
D
t
D
t
t
<
<
OFF
V
Q
V
RT
V
V
C
V
V
R
V
DT
V
ST
W
V
Wmin
V
> 6 V
TLE 4261-2
Semiconductor Group
13
1998-11-01
Drop Voltage versus Output Current
Current Consumption versus
Input Voltage
Output Voltage versus Input Voltage
Current Consumption versus
Output Current
AED00586
0
0
V
100
200
300
600
mA
400
800
mV
= 4.5 V
V
Q
400
100
300
500
600
700
200
Dr
C
= 125
= 25 C
T
j
T
j
AED00026
0
0
V
q
10
20
30
50
V
20
40
60
80
100
120
mA
R
L
=10
40
AED00027
0
0
V
V
Q
2
4
6
10
V
2
4
6
8
10
12
V
R
L
=10
8
AED00588
0
0
100
200
300
600
mA
40
80
mA
= 13.5 V
V
Q
400
10
30
50
60
70
20
q
TLE 4261-2
Semiconductor Group
14
1998-11-01
Charge Current
I
D
and Discharge
Current
I
CD
versus Temperature
Pulse Interval
T
W
versus Temperature
Switching Voltage
V
CD
and
V
ST
versus
Temperature
Output Voltage versus Temperature
20
15
10
40
-40
0
0
5
A
25
35
30
40
V
C
V
160
80
120 C
T
j
AED01322
= 1.5 V
= 13.5 V
d
Cd
0.8
0.4
0.6
0.2
0
-40
40
0
1.6
1.2
1.4
1.0
W
T
C
120
80
160
T
j
AED01324
ms
V
= 13.5 V
= 100 nF
d
C
= 13.5 V
2
-40
0
1
80
0
40
3
4
V
V
C
120
160
j
T
AED01323
V
V
Cd
ST
V
AED00028
4.60
-40
V
Q
0
40
80
160
4.70
4.80
4.90
5.00
5.10
5.20
V
V
=
120 C
j
13.5 V
TLE 4261-2
Semiconductor Group
15
1998-11-01
Current Consumption of Inhibit at the
Switching Point versus Temperature
Input Step Responce
Output Current versus
Input Voltage
Load Step Responce
60
40
20
40
-40
0
0
80
A
120
100
20
160
C
80
120
T
j
AED01325
OFF
ON
AED00595
-40
-10
V
0
10
20
50
40
2
V
t
30
-20
20
0
1
0
Q
V
mV
t
t
1
=
R
F
s
s
_
~
Q
=
C
22
s
AED00594
0
0
V
Q
10
20
30
50
V
0.2
0.4
0.6
0.8
1.0
1.2
mA
= 25
40
C
T
j
AED00596
-200
-10
0
10
20
50
200
mA
t
30
-100
100
25
500
0
Q
Q
V
mV
s
Q
=
C
22
s
TLE 4261-2
Semiconductor Group
16
1998-11-01
Package Outlines
10
+0.4
3.75
+0.1
1
7
1.27
0.6
8.4
0.4
0.4
4.5
0.4
+0.1
10.2
15.4
0.3
8.8
-0.2
16
1.27
+0.1
+0.1
2.8
4.6
-0.2
2.6
8.6
0.3
0.3
0.4
19.5 max
1 x 45
at dam bar (max 1.8 from body)
im Dichtstegbereich (max 1.8 vom Krper)
-0.15
-0.15
M
0.6
7x
-0.2
10.2
1)
1) 0.75
1) 0.75
GPT05108
P-TO220-7-1
(Plastic Transistor Single Outline)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book "Package Information".
Dimensions in mm
TLE 4261-2
Semiconductor Group
17
1998-11-01
GPT05874
10.2
8.0
10.1
0.6
6 x 1.27 = 7.62
3.5
0.4
8.8
1.5
0.2
1.27
2.6
4.6
1.27
1)
1) shear and punch direction burr free surface
P-TO220-7-8
(Plastic Transistor Single Outline)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book "Package Information".
Dimensions in mm
SMD = Surface Mounted Device
TLE 4261-2
Semiconductor Group
18
1998-11-01
1
10
11
20
Index Marking
1) Does not include plastic or metal protrusions of 0.15 max per side
2) Does not include dambar protrusion of 0.05 max per side
GPS05094
2.65 max
0.1
0.2
-0.1
2.45
-0.2
+0.15
0.35
1.27
2)
0.2 24x
-0.2
7.6
1)
0.35 x 45
0.23
8 max
+0.09
+0.8
0.3
10.3
0.4
12.8
-0.2
1)
P-DSO-20-6
(Plastic Dual Small Outline)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book "Package Information".
Dimensions in mm
SMD = Surface Mounted Device