Type
Ordering Code
Tape and Reel
Information
Pin Configuration Marking
Package
1
2
3
SP 0610 L
Q67000-S065
bulk
D
G
S
SP0610L TO-92
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
-
60
V
Drain-gate voltage,
R
GS
= 20 k
V
DGR
-
60
Gate-source voltage
V
GS
20
Continuous drain current,
T
A
= 25 C
I
D
-
0.18
A
Pulsed drain current,
T
A
= 25 C
I
D puls
-
0.72
Max. power dissipation,
T
A
= 25 C
P
tot
0.63
W
Operating and storage temperature range
T
j
,
T
stg
-
55 ... + 150
C
Thermal resistance, chip-ambient
(without heat sink)
R
thJA
R
thJSR
200
K/W
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55/150/56
SIPMOS
Small-Signal Transistor
SP 0610L
1
2
3
q
V
DS
-
60 V
q
I
D
-
0.18 A
q
R
DS(on)
10
q
P channel
q
Enhancement mode
SP 0610L
Electrical Characteristics
at
T
j
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0,
I
D
= 0.25 mA
V
(BR)DSS
-
60
V
Gate threshold voltage
V
GS
=
V
DS
,
I
D
= 1 mA
V
GS(th)
-
1.0
-
1.5
-
2.0
Zero gate voltage drain current
V
DS
=
-
60 V,
V
GS
= 0
T
j
= 25 C
I
DSS
-
0.1
-
1
A
Gate-source leakage current
V
GS
=
-
20 V,
V
DS
= 0
I
GSS
-
1
-
10
nA
Drain-source on-resistance
V
GS
=
-
10 V,
I
D
=
-
0.5 A
R
DS(on)
7
10
Dynamic Characteristics
Forward transconductance
V
DS
2
I
D
R
DS(on)max
,
I
D
=
-
0.5 A
g
fs
0.08
0.13
S
Input capacitance
V
GS
= 0,
V
DS
=
-
25 V,
f
= 1 MHz
C
i
iss
30
40
pF
Output capacitance
V
GS
= 0,
V
DS
=
-
25 V,
f
= 1 MHz
C
oss
17
25
Reverse transfer capacitance
V
GS
= 0,
V
DS
=
-
25 V,
f
= 1 MHz
C
rss
8
12
Turn-on time
t
on
, (
t
on
=
t
d(on)
+
t
r
)
V
DD
=
-
30 V,
V
GS
=
-
10 V,
R
GS
= 50
,
I
D
=
-
0.27 A
t
d(on)
7
10
ns
t
r
12
18
Turn-off time
t
off
, (
t
off
=
t
d(off)
+
t
f
)
V
DD
=
-
30 V,
V
GS
=
-
10 V,
R
GS
= 50
,
I
D
=
-
0.27 A
t
d(off)
10
13
t
f
20
27
Package Outline
Electrical Characteristics (cont'd)
at
T
j
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Continuous reverse drain current
T
A
= 25 C
I
S
-
0.18
A
Pulsed reverse drain current
T
A
= 25 C
I
SM
-
0.72
Diode forward on-voltage
I
F
=
-
0.18 A,
V
GS
= 0
V
SD
-
0.85
-
1.2
V
TO-92
Dimensions in mm
SP 0610L
Characteristics
at
T
j
= 25 C, unless otherwise specified.
Total power dissipation
P
tot
=
f
(
T
A
)
Typ. output characteristics
I
D
=
f
(
V
DS
)
parameter:
t
p
= 80
s
Safe operating area
I
D
=
f
(
V
DS
)
parameter:
D
= 0.01,
T
C
= 25 C
Typ. drain-source on-resistance
R
DS(on)
=
f
(
I
D
)
parameter:
V
GS
SP 0610L
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80
s,
V
DS
2
I
D
R
DS(on)max.
Drain-source on-resistance
R
DS(on)
=
f (T
j
)
parameter:
I
D
= 0.5 A,
V
GS
= 10 V, (spread)
Typ. forward transconductance
g
fs
=
f
(
I
D
)
parameter:
V
DS
2
I
D
R
DS(on)max.
,
t
p
= 80
s
Typ. capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
= 0,
f
= 1 MHz
SP 0610L
Gate threshold voltage
V
GS(th)
=
f
(
T
j
)
parameter:
V
DS
=
V
GS
,
I
D
= 1 mA, (spread)
Drain current
I
D
=
f
(
T
A
)
parameter:
V
GS
10 V
SP 0610L
Forward characteristics of reverse diode
I
F
=
f
(
V
SD
)
parameter:
t
p
= 80
s,
T
j
,
(spread)
Drain-source breakdown voltage
V
(BR) DSS
=
b
V
(BR)DSS
(25 C)
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