Semiconductor Group
1
Sep-12-1996
BSP 295
SIPMOS
Small-Signal Transistor
N channel
Enhancement mode
Logic Level
V
GS(th)
= 0.8...2.0V
Pin 1
Pin 2
Pin 3
Pin 4
G
D
S
D
Type
V
DS
I
D
R
DS(on)
Package
Marking
BSP 295
50 V
1.8 A
0.3
SOT-223
BSP 295
Type
Ordering Code
Tape and Reel Information
BSP 295
Q67000-S066
E6327
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
V
DS
50
V
Drain-gate voltage
R
GS
= 20 k
V
DGR
50
Gate source voltage
V
GS
14
Gate-source peak voltage,aperiodic
V
gs
20
Continuous drain current
T
A
= 34 C
I
D
1.8
A
DC drain current, pulsed
T
A
= 25 C
I
Dpuls
7.2
Power dissipation
T
A
= 25 C
P
tot
1.8
W
Semiconductor Group
2
Sep-12-1996
BSP 295
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
R
thJA
70
K/W
Therminal resistance, junction-soldering point
1)
R
thJS
10
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 C
V
(BR)DSS
50
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
0.8
1.4
2
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 125 C
V
DS
= 30 V,
V
GS
= 0 V,
T
j
= 25 C
I
DSS
-
-
-
-
8
0.1
100
50
1
A
nA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 1.8 A
V
GS
= 4.5 V,
I
D
= 1.8 A
R
DS(on)
-
-
0.45
0.25
0.5
0.3
Semiconductor Group
3
Sep-12-1996
BSP 295
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 1.7 A
g
fs
0.5
1.7
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
iss
-
320
425
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
oss
-
110
170
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
rss
-
50
75
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
GS
= 50
t
d(on)
-
8
12
ns
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
GS
= 50
t
r
-
20
30
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
GS
= 50
t
d(off)
-
120
160
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
GS
= 50
t
f
-
85
115
Semiconductor Group
4
Sep-12-1996
BSP 295
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
1.8
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
7.2
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 3.6 A,
T
j
= 25 C
V
SD
-
1.1
1.5
V
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