Semiconductor Group
1
Sep-12-1996
BSP 297
SIPMOS
Small-Signal Transistor
N channel
Enhancement mode
Logic Level
V
GS(th)
= 0.8...2.0V
Pin 1
Pin 2
Pin 3
Pin 4
G
D
S
D
Type
V
DS
I
D
R
DS(on)
Package
Marking
BSP 297
200 V
0.65 A
2
SOT-223
BSP 297
Type
Ordering Code
Tape and Reel Information
BSP 297
Q67000-S068
E6327
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
V
DS
200
V
Drain-gate voltage
R
GS
= 20 k
V
DGR
200
Gate source voltage
V
GS
14
Gate-source peak voltage,aperiodic
V
gs
20
Continuous drain current
T
A
= 25 C
I
D
0.65
A
DC drain current, pulsed
T
A
= 25 C
I
Dpuls
2.6
Power dissipation
T
A
= 25 C
P
tot
1.8
W
Semiconductor Group
2
Sep-12-1996
BSP 297
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
R
thJA
70
K/W
Therminal resistance, junction-soldering point
1)
R
thJS
10
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 C
V
(BR)DSS
200
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
0.8
1.4
2
Zero gate voltage drain current
V
DS
= 200 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 200 V,
V
GS
= 0 V,
T
j
= 125 C
V
DS
= 130 V,
V
GS
= 0 V,
T
j
= 25 C
I
DSS
-
-
-
-
8
0.1
100
50
1
A
nA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 0.65 A
V
GS
= 4.5 V,
I
D
= 0.65 A
R
DS(on)
-
-
2
1.6
3.3
2
Semiconductor Group
3
Sep-12-1996
BSP 297
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 0.65 A
g
fs
0.5
1.15
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
iss
-
300
400
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
oss
-
40
60
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
rss
-
20
30
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
GS
= 50
t
d(on)
-
8
12
ns
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
GS
= 50
t
r
-
15
25
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
GS
= 50
t
d(off)
-
120
160
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
GS
= 50
t
f
-
50
70
Semiconductor Group
4
Sep-12-1996
BSP 297
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
0.65
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
2.6
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 1.3 A,
T
j
= 25 C
V
SD
-
0.9
1.1
V
Semiconductor Group
6
Sep-12-1996
BSP 297
Typ. output characteristics
I
D
=
(
V
DS
)
parameter:
t
p
= 80 s
0.0
1.0
2.0
3.0
4.0
5.0
V
7.0
V
DS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
A
1.5
I
D
V
GS
[V]
a
a
2.0
b
b
2.5
c
c
3.0
d
d
3.5
e
e
4.0
f
f
4.5
g
g
5.0
h
h
6.0
i
i
7.0
j
j
8.0
k
k
9.0
l
P
tot
= 2W
l
10.0
Typ. drain-source on-resistance
R
DS (on)
=
(
I
D
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
A
0.9
I
D
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.5
R
DS (on)
V
GS
[V] =
a
a
2.0
b
b
2.5
c
c
3.0
d
d
3.5
e
e
4.0
f
f
4.5
g
g
5.0
h
h
6.0
i
i
7.0
j
j
8.0
k
k
9.0
l
l
10.0
Typ. transfer characteristics
I
D
= f(V
GS
)
parameter:
t
p
= 80 s
0
1
2
3
4
5
6
7
8
V
10
V
GS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
A
2.2
I
D
Typ. forward transconductance
g
fs
=
f (I
D
)
parameter:
t
p
= 80 s,
0.0
0.4
0.8
1.2
1.6
A
2.2
I
D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
S
1.8
g
fs
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