Mini PROFET BSP 350
Semiconductor Group
1
04.97
MiniPROFET
High-side switch
Short-circuit protection
Overtemperature protection with hysteresis
Overload protection
Overvoltage protection
Reverse battery protection
1
)
Switching inductive load
Clamp of negative output voltage with inductive loads
Maximum current internally limited
Package: SOT 223
Type
Ordering code
BSP 350
Q67000-S227
Maximum Ratings
Parameter
Symbol Values
Unit
Supply voltage
V
bb
50
V
Load current
self-limited
I
L
I
L(SC)
A
Maximum current through input pin (DC)
see internal circuit diagram
I
IN
15
mA
Inductive load switch-off energy dissipation
E
AS
5
mJ
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Max. power dissipation (DC)
2)
T
A
= 25 C
P
tot
1.7
W
Thermal resistance
chip - soldering point:
chip - ambient:
2
)
R
thJS
R
thJA
17
72
K/W
+ Vbb
GND
Control
Circuit
R
Temperature
Sensor
1
3
OUT
IN
RL
IN
2/4
1
) For 12 V applications only. Reverse load current only limited by connected load.
2)
BSP 350 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection
1
2
3
4
Pins:
1
2
3
4
IN
V
bb
OUT
V
bb
BSP 350
Semiconductor Group
2
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb = 13.5V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 2 to 3)
I
L
= 0.07 A, pin 1 = GND
T
j
= 25C
T
j
= 150C
V
bb
= 6 V, T
j
= 25C
R
ON
--
--
--
4
8
5
5
10
10
Nominal load current (pin 2 to 3)
ISO Standard:
V
ON
= V
bb
-
V
OUT
= 0.5 V
T
S
= 85 C
I
L(ISO)
0.07
--
--
A
Turn-on time
to 90%
V
OUT
Turn-off time
to 10%
V
OUT
R
L
= 270
t
on
t
off
--
--
60
70
100
140
s
Slew rate on
10 to 30%
V
OUT
,
R
L
= 270
d
V /dt
on
--
4
6
V/
s
Slew rate off
70 to 40%
V
OUT
,
R
L
= 270
-d
V/dt
off
--
2
6
Input
OFF state input current
T
j
= - 40...+150C
R
L
= 270
,
V
OUT
0,1V
I
IN(off)
--
--
0.05
mA
ON state input current, (pin 1 grounded)
3
)
T
j
= - 40...+150C
I
IN(on)
--
0.3
1
mA
Operating Parameters
Operating voltage (pin 1 grounded)
4
)
T
j
= - 40...+150C
V
bb(on)
4.9
--
45
V
Leakage current (pin 2 to 3, pin 1 open)
T
j
= 25C
T
j
=150C
I
bb(off)
--
--
1
1.2
10
10
A
3
) Driver circuit must be capable to drive currents
>
1mA.
4
) Below Vbb=4.5 V typ. without chargepump, Vout
Vbb - 2 V
BSP 350
Semiconductor Group
3
Parameter and Conditions
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb = 13.5V unless otherwise specified
min
typ
max
Protection Functions
Current limit (pin 2 to 3)
5)
T
j
= 25C
T
j
= -40...+150
I
L(SC)
0.2
0.1
0.5
--
1
1.2
A
Thermal overload trip temperature
T
jt
150
--
--
C
Thermal hysteresis
T
jt
--
20
--
K
Overvoltage protection
T
j
=-40...+150C
V
bbin(AZ)
50
56
--
V
Output clamp (ind. load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
V
ON(CL)
--
56
--
V
Inductive load switch-off energy dissipation
6)
E
AS
--
--
5
mJ
Reverse battery resistor (pin 1 to 2)
R
IN
--
1
--
k
Reverse Diode
Continious reverse drain current
T
j
= 25C
I
S
--
--
0.2
A
Pulsed reverse drain current
T
j
= 25C
I
SM
--
--
0.8
A
Diode forward on voltage
I
F
= 0.2 A, I
IN
=
0.05 mA
V
SD
--
0.9
1.2
V
5)
load current limits onset at IL * Ron approx. 1V
short circuit protection: combination of current limit and thermal overload switch off
6)
while demagnetizing load inductance, dissipated energy is
E
AS=
(VON(CL) * iL(t) dt,
approx.
E
AS=
1
/
2
* L * I
2
L
* (
V
ON(CL)
V
ON(CL)
-V
bb
)
BSP 350
Semiconductor Group
4
Max allowable power dissipation
Ptot = f (TA,TSP)
Ptot [W]
0
1
2
3
4
5
6
7
8
0
25
50
75
100
125
150
T
A
SP
T
TA, TSP[C]
On state resistance (Vbb- pin to OUT pin)
RON = f (Tj);Vbb = 13.5 V;IL = 70 mA
RON [
]
0
1
2
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100 125 150
typ
98%
TJ [C]
Typ. on state resistance (Vbb- pin to OUT pin)
RON = f (Vbb); IL = 70 mA; Tj = 25C
RON [
]
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
Vbb [V]
Typ. short circuit current
IL(SC) = f(Tj); Vbb = 13.5V
ILSC [
]
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-50
-25
0
25
50
75
100 125 150
TJ [C]
BSP 350
Semiconductor Group
5
Typ. short circuit current
IL(SC) = f(VON); Vbb = 13.5V; Tj = 25C
ILSC [
]
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
2
4
6
8
VON [V]
Typ. short circuit current
IL(SC) = f(t); Vbb = 13.5V
no heatsink; Parameter: TjStart
IL(SC)[mA]
0
200
400
600
800
1000
-0,5
0,5
1,5
2,5
3,5
4,5
5,5
-40C
25C
125C
t[s]
Test circuit
V
Vin
Vbb
Iin
2/4
1
3
out
Von
Turn on conditions
Chargepump threshold
VON = f (Vbb)
typ.
m ax.
2
4
6
8
2
4
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