Semiconductor Group
1
Sep-12-1996
BSP 319
SIPMOS
Small-Signal Transistor
N channel
Enhancement mode
Logic Level
Avalanche rated
V
GS(th)
= 1.2 ...2.0 V
Pin 1
Pin 2
Pin 3
Pin 4
G
D
S
D
Type
V
DS
I
D
R
DS(on)
Package
Marking
BSP 319
50 V
3.8 A
0.07
SOT-223
BSP 319
Type
Ordering Code
Tape and Reel Information
BSP 319
Q67000-S273
E6327
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
A
= 29 C
I
D
3.8
A
DC drain current, pulsed
T
A
= 25 C
I
Dpuls
15
Avalanche energy, single pulse
I
D
= 3.8 A,
V
DD
= 25 V,
R
GS
= 25
L = 6.2 mH, T
j
= 25 C
E
AS
90
mJ
Gate source voltage
V
GS
14
V
Gate-source peak voltage,aperiodic
V
gs
20
Power dissipation
T
A
= 25 C
P
tot
1.8
W
Semiconductor Group
2
Sep-12-1996
BSP 319
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
R
thJA
70
K/W
Therminal resistance, junction-soldering point
1)
R
thJS
10
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 0 C
V
(BR)DSS
50
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
1.2
1.6
2
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 125 C
I
DSS
-
-
10
0.1
100
1
A
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-state resistance
V
GS
= 5 V,
I
D
= 2.4 A
R
DS(on)
-
0.06
0.07
Semiconductor Group
3
Sep-12-1996
BSP 319
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 2.4 A
g
fs
3
8
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
iss
-
750
1000
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
oss
-
240
360
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
rss
-
120
180
Turn-on delay time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 0.3 A
R
GS
= 50
t
d(on)
-
20
30
ns
Rise time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 0.3 A
R
GS
= 50
t
r
-
55
85
Turn-off delay time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 0.3 A
R
GS
= 50
t
d(off)
-
210
260
Fall time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 0.3 A
R
GS
= 50
t
f
-
120
160
Semiconductor Group
4
Sep-12-1996
BSP 319
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
3.8
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
15
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 7.6 A,
T
j
= 25 C
V
SD
-
0.95
1.3
V
Reverse recovery time
V
R
= 30 V,
I
F=
l
S,
d
i
F
/d
t = 100 A/s
t
rr
-
50
-
ns
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S,
d
i
F
/d
t = 100 A/s
Q
rr
-
0.07
-
C
Semiconductor Group
5
Sep-12-1996
BSP 319
Power dissipation
P
tot
=
(
T
A
)
0
20
40
60
80
100
120
C
160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
2.0
P
tot
Drain current
I
D
=
(
T
A
)
parameter:
V
GS
5 V
0
20
40
60
80
100
120
C
160
T
A
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
A
4.0
I
D
Safe operating area
I
D
=f(
V
DS
)
parameter :
D = 0, T
C
=25C
Transient thermal impedance
Z
th JA
=
(
t
p
)
parameter:
D = t
p
/
T
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJC
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group
6
Sep-12-1996
BSP 319
Typ. output characteristics
I
D
=
(
V
DS
)
parameter:
t
p
= 80 s ,
T
j
= 25 C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
5.0
V
DS
0
1
2
3
4
5
6
7
A
9
I
D
V
GS
[V]
a
a
2.0
b
b
2.5
c
c
3.0
d
d
3.5
e
e
4.0
f
f
4.5
g
g
5.0
h
h
6.0
i
i
7.0
j
j
8.0
k
k
9.0
l
P
tot
= 2W
l
10.0
Typ. drain-source on-resistance
R
DS (on)
=
(
I
D
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
A
5.0
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.22
R
DS (on)
V
GS
[V] =
a
2.0
V
GS
[V] =
a
a
2.5
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
6.0
h
h
7.0
i
i
8.0
j
j
9.0
k
k
10.0
Typ. transfer characteristics
I
D
= f(V
GS
)
parameter:
t
p
= 80 s
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
5.0
V
GS
0
2
4
6
8
10
12
14
16
A
20
I
D
Typ. forward transconductance
g
fs
=
f (I
D
)
parameter:
t
p
= 80 s,
0
2
4
6
8
10
12
14
A
18
I
D
0
1
2
3
4
5
6
7
8
9
10
11
12
S
14
g
fs
7
Sep-12-1996
Semiconductor Group
BSP 319
Drain-source on-resistance
R
DS (on)
=
(
T
j
)
parameter:
I
D
= 2.4 A,
V
GS
= 5 V
-60
-20
20
60
100
C
160
T
j
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.17
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th)
=
(
T
j
)
parameter:
V
GS
=
V
DS
,
I
D
= 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60
-20
20
60
100
C
160
T
j
2%
typ
98%
Typ. capacitances
C = f (V
DS
)
parameter:
V
GS
=0V,
f = 1 MHz
0
5
10
15
20
25
30
V
40
V
DS
-2
10
-1
10
0
10
1
10
nF
C
C
iss
C
rss
C
oss
Forward characteristics of reverse diode
I
F
=
(
V
SD
)
parameter:
T
j
, t
p
= 80 s
-1
10
0
10
1
10
2
10
A
I
F
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 150 C typ
T
j
= 150 C (98%)
Semiconductor Group
8
Sep-12-1996
BSP 319
Avalanche energy
E
AS
=
(
T
j
)
parameter:
I
D
= 3.8 A,
V
DD
= 25 V
R
GS
= 25
,
L = 6.2 mH
20
40
60
80
100
120
C
160
T
j
0
10
20
30
40
50
60
70
80
mJ
100
E
AS
Drain-source breakdown voltage
V
(BR)DSS
=
(
T
j
)
-60
-20
20
60
100
C
160
T
j
45
46
47
48
49
50
51
52
53
54
55
56
57
58
V
60
V
(BR)DSS
Safe operating area
I
D
=f(
V
DS
)
parameter :
D = 0.01, T
C
=25C
Semiconductor Group
9
Sep-12-1996
BSP 319
Package outlines
SOT-223
Dimensions in mm
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