Semiconductor Group
1
Sep-12-1996
BSP 373
SIPMOS
Small-Signal Transistor
N channel
Enhancement mode
Avalanche rated
V
GS(th)
= 2.1 ... 4.0 V
Pin 1
Pin 2
Pin 3
Pin 4
G
D
S
D
Type
V
DS
I
D
R
DS(on)
Package
Marking
BSP 373
100 V
1.7 A
0.3
SOT-223
BSP 373
Type
Ordering Code
Tape and Reel Information
BSP 373
Q67000-S301
E6327
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
A
= 28 C
I
D
1.7
A
DC drain current, pulsed
T
A
= 25 C
I
Dpuls
6.8
Avalanche energy, single pulse
I
D
= 1.7 A,
V
DD
= 25 V,
R
GS
= 25
L = 23.3 mH, T
j
= 25 C
E
AS
45
mJ
Gate source voltage
V
GS
20
V
Power dissipation
T
A
= 25 C
P
tot
1.8
W
Semiconductor Group
2
Sep-12-1996
BSP 373
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
R
thJA
70
K/W
Therminal resistance, junction-soldering point
1)
R
thJS
10
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 0 C
V
(BR)DSS
100
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
2.1
3
4
Zero gate voltage drain current
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 125 C
I
DSS
-
-
10
0.1
100
1
A
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 1.7 A
R
DS(on)
-
0.16
0.3
Semiconductor Group
3
Sep-12-1996
BSP 373
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 1.7 A
g
fs
1.5
2.8
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
iss
-
400
550
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
oss
-
125
190
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
rss
-
70
105
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
t
d(on)
-
10
15
ns
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
t
r
-
30
45
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
t
d(off)
-
85
115
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
t
f
-
60
80
Semiconductor Group
4
Sep-12-1996
BSP 373
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
1.7
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
6.8
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 1.7 A,
T
j
= 25 C
V
SD
-
0.8
1.1
V
Reverse recovery time
V
R
= 30 V,
I
F=
l
S,
d
i
F
/d
t = 100 A/s
t
rr
-
-
-
ns
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S,
d
i
F
/d
t = 100 A/s
Q
rr
-
-
-
C
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