Semiconductor Group
2
Sep-12-1996
BSP 317
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
R
thJA
70
K/W
Therminal resistance, junction-soldering point
1)
R
thJS
10
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= -0.25 mA,
T
j
= 25 C
V
(BR)DSS
-200
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= -1 mA
V
GS(th)
-0.8
-1.1
-2
Zero gate voltage drain current
V
DS
= -200 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= -200 V,
V
GS
= 0 V,
T
j
= 125 C
V
DS
= -130 V,
V
GS
= 0 V,
T
j
= 25 C
I
DSS
-
-
-
-
-10
-0.1
-100
-100
-1
A
nA
Gate-source leakage current
V
GS
= -20 V,
V
DS
= 0 V
I
GSS
-
-10
-100
nA
Drain-Source on-state resistance
V
GS
= -10 V,
I
D
= -0.37 A
R
DS(on)
-
3.4
6
Semiconductor Group
3
Sep-12-1996
BSP 317
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= -0.37 A
g
fs
0.25
0.35
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
iss
-
270
360
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
oss
-
50
75
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
rss
-
15
25
Turn-on delay time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.29 A
R
GS
= 50
t
d(on)
-
8
12
ns
Rise time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.29 A
R
GS
= 50
t
r
-
30
45
Turn-off delay time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.29 A
R
GS
= 50
t
d(off)
-
80
110
Fall time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.29 A
R
GS
= 50
t
f
-
90
120
Semiconductor Group
4
Sep-12-1996
BSP 317
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
-0.37
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
-1.48
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= -0.74 A,
T
j
= 25 C
V
SD
-
-0.95
-1.1
V
Semiconductor Group
6
Sep-12-1996
BSP 317
Typ. output characteristics
I
D
=
(
V
DS
)
parameter:
t
p
= 80 s
0
-1
-2
-3
-4
-5
-6
-7
V
-9
V
DS
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
A
-0.9
I
D
V
GS
[V]
a
a
-2.0
b
b
-2.5
c
c
-3.0
d
d
-3.5
e
e
-4.0
f
f
-4.5
g
g
-5.0
h
h
-6.0
i
i
-7.0
j
j
-8.0
k
k
-9.0
l
P
tot
= 2W
l
-10.0
Typ. drain-source on-resistance
R
DS (on)
=
(
I
D
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0.00
-0.10
-0.20
-0.30
-0.40
A
-0.60
I
D
0
2
4
6
8
10
12
14
16
19
R
DS (on)
V
GS
[V] =
a
a
-2.0
b
b
-2.5
c
c
-3.0
d
d
-3.5
e
e
-4.0
f
f
-4.5
g
g
-5.0
h
h
-6.0
i
i
-7.0
j
j
-8.0
k
k
-9.0
l
l
-10.0
Typ. transfer characteristics
I
D
= f(V
GS
)
parameter:
t
p
= 80 s
0
-1
-2
-3
-4
-5
-6
-7
-8
V
-10
V
GS
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
A
-1.8
I
D
Typ. forward transconductance
g
fs
=
f (I
D
)
parameter:
t
p
= 80 s,
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
A
-1.6
I
D
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
S
0.65
g
fs
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