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Электронный компонент: Q67006-A9355

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TLE 4266
Semiconductor Group
1
1998-11-01
5-V Low-Drop Voltage Regulator
Bipolar IC
Features
q
Output voltage tolerance
2 %
q
Very low current consumption
q
Low-drop voltage
q
Overtemperature protection
q
Reverse polarity proof
q
Wide temperature range
q
Suitable for use in automotive electronics
q
Inhibit
w
New type
Functional Description
TLE 4266 G is a 5-V low-drop voltage regulator in a P-SOT223-4-2 SMD package. The
IC regulates an input voltage
V
i
in the range of 5.5 V <
V
i
< 45 V to
V
Qrated
= 5 V / 10 V.
The maximum output current is more than 120 mA. The IC can be switched off via the
inhibit input, which causes the current consumption to drop below 10
A. The IC is
shortcircuit-proof and incorporates temperature protection that disables the IC an
overtemperature.
Dimensioning Information on External Components
The input capacitor
C
i
is necessary for compensating line influences. Using a resistor of
approx. 1
in series with
C
i
, the oscillating of input inductivity and input capacitance can
be clamped. The output capacitor
C
Q
is necessary for the stability of the regulating
circuit. Stability is guaranteed at values
C
Q
10
F and an ESR
10
within the
operating temperature range.
Type
Ordering Code
Package
TLE 4266 G
Q67006-A9152
P-SOT223-4-2 (SMD)
w
TLE 4266 GSV10
Q67006-A9355
P-SOT223-4-2 (SMD)
P-SOT223-4-2
TLE 4266
TLE 4266
Semiconductor Group
2
1998-11-01
Pin Configuration
(top view)
Pin Definitions and Functions
Pin
Symbol
Function
1
V
I
Input voltage; block to ground directly at the IC with a ceramic
capacitor.
2
Inh
Inhibit; low-active input.
3
V
Q
Output voltage; block to ground with a
10
F capacitor.
4
GND
Ground
AEP01734
V
Inh
Q
V
GND
1
2
3
4
TLE 4266
Semiconductor Group
3
1998-11-01
Circuit Description
The control amplifier compares a reference voltage, which is kept highly accurate by
resistance adjustment, to a voltage that is proportional to the output voltage and drives
the base of the series transistor via a buffer. Saturation control as a function of the load
current prevents any oversaturation of the power element. The IC also incorporates a
number of internal circuits for protection against:
q
Overload
q
Overtemperature
q
Reverse polarity
Block Diagram
4
2
Reference
Bandgap
Adjustment
Sensor
Temperature
Saturation
Control and
Protection
Circuit
Control
Amplifier
Buffer
1
3
Output
Input
Inhibit
GND
AEB01725
TLE 4266
Semiconductor Group
4
1998-11-01
Absolute Maximum Ratings
T
j
= 40 to 150
C
Parameter
Symbol
Limit Values
Unit Notes
min.
max.
Input
Voltage
V
i
42
45
V
Current
I
i
internally limited
Inhibit
Voltage
V
e
42
45
V
Output
Voltage
V
Q
1
16
V
Current
I
Q
internally limited
GND
Current
I
M
50
mA
Temperature
Junction temperature
T
j
150
C
Storage temperature
T
S
50
150
C
Operating Range
Input voltage
V
i
5.5
45
V
Input voltage
GSV 10-version
V
i
10.5
45
V
Junction temperature
T
j
40
150
C
Thermal Resistance
Junction ambient
R
thjA
100
K/W
soldered
Junction case
R
thjC
25
K/W
TLE 4266
Semiconductor Group
5
1998-11-01
Characteristics
V
I
= 13.5 V; 40
C
T
j
125
C
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Output voltage
V
Q
4.9
5
5.1
V
5 mA
I
Q
100 mA
6 V
V
i
28 V
Output voltage
GSV 10-version
V
Q
9.8
10.0
10.2
V
5 mA
I
Q
100 mA
6 V
V
i
28 V
Output-current
limitation
I
Q
120
150
mA
Current consumption
I
q
=
I
i
I
Q
I
q
0
10
A
V
e
= 0 V;
T
j
100
C
Current consumption
I
q
=
I
i
I
Q
I
q
400
A
I
Q
= 1 mA
Current consumption
I
q
=
I
i
I
Q
I
q
10
15
mA
I
Q
= 100 mA
Drop voltage
V
Dr
0.25
0.5
V
I
Q
= 100 mA
1)
Load regulation
V
Q
40
mV
I
Q
= 5 to 100 mA
V
i
= 6 V
Supply-voltage
regulation
V
Q
15
30
mV
V
I
= 6 V to 28 V
I
Q
= 5 mA
Supply-voltage
rejection
SVR
54
dB
f
r
= 100 Hz
V
r
= 0.5
V
SS
Inhibit
Inhibit on voltage
V
e, on
3.5
V
Inhibit off voltage
V
e, off
0.8
V
Inhibit current
I
e
5
15
25
A
V
e
= 5 V
1) Drop voltage =
V
i
V
Q
(measured when the output voltage
V
Q
has dropped 100 mV from the
nominal value obtained at
V
i
= 13.5 V).
TLE 4266
Semiconductor Group
6
1998-11-01
Measuring Circuit
Application Circuit
TLE 4266G
1
2
3
4
nF
100
470 F
V
e
V
i
Input
5.5 V to 45 V
e
i
V
Q
F
22
Q
AES01726
Output
TLE 4266G
1
2
3
4
Input
5.5 V to 45 V
F
22
AES01727
C
i
Output
Q
C
e.g. Kl. 15
TLE 4266
Semiconductor Group
7
1998-11-01
Drop Voltage
V
Dr
versus
Output Current
I
Q
Current Consumption
I
q
versus
Output Current
I
Q
Current Consumption
I
q
versus
Input Voltage
V
i
Current Consumption
I
q
versus
Output Current
I
Q
Dr
V
Q
0
25
100
200
300
400
500
600
mV
800
50
100
mA
175
75
125
=
C
125
25 C
=
700
j
T
j
T
Q
0
0
AED01980
mA
150
50
100
q
2
4
6
8
mA
12
V
i
= 13.5 V
10
0
0
AED01979
R =
q
V
L
50
10
20
30
V 50
5
10
mA
15
100
L
=
R
i
40
Q
0
0
AED01981
mA
30
10
20
q
0.5
1.0
1.5
2.0
mA
3.0
V
i
= 13.5 V
5
15
2.5
TLE 4266
Semiconductor Group
8
1998-11-01
Output Voltage
V
Q
versus
Temperature
T
j
(5 V-version)
Output Voltage
V
Q
versus
Input Voltage
V
i
(5 V-version)
Output Current
I
Q
versus
Input Voltage
V
i
Output Voltage
V
Q
versus
Inhibit Voltage
V
e
(5 V-version)
4.60
-40
AED01982
V
Q
0
40
80
160
4.80
5.00
V
5.20
120 C
4.70
4.90
5.10
i
V = 13.5 V
j
T
0
0
AED01984
V
Q
2
4
6
10
2
4
V
6
8
1
3
5
L
R = 50
i
V
V
0
0
AED01983
=
C
125
25 C
=
Q
V
i
10
20
30
40
50
50
100
150
200
mA
V
j
T
j
T
0
0
AED02014
V
Q
2
4
V
6
1
3
5
V = 13.5 V
e
V
V
1
2
3
4
5
6
=
V
e
V
TLE 4266
Semiconductor Group
9
1998-11-01
Package Outlines
0.1
0.2
0.1
0.7
4
3
2
1
6.5
3
acc. to
+0.2
DIN 6784
1.6
0.1
15max
0.04
0.28
7
0.3
0.2
3.5
0.5
0.1 max
min
B
M
0.25
B
A
2.3
4.6
A
M
0.25
P-SOT223-4-2
(Plastic Small Outline Transistor)
Weight approx. 0.15 g
GP
S05
560
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book "Package Information"
Dimensions in mm
SMD = Surface Mounted Device