Semiconductor Group
1
Jul-30-1996
BUP 313
IGBT
Preliminary data
Low forward voltage drop
High switching speed
Low tail current
Latch-up free
Avalanche rated
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
CE
I
C
Package
Ordering Code
BUP 313
1200V 32A
TO-218 AB
Q67040-A4208-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE
1200
V
Collector-gate voltage
R
GE
= 20 k
V
CGR
1200
Gate-emitter voltage
V
GE
20
DC collector current
T
C
= 25 C
T
C
= 90 C
I
C
20
32
A
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 C
T
C
= 90 C
I
Cpuls
40
64
Avalanche energy, single pulse
I
C
= 15 A,
V
CC
= 50 V,
R
GE
= 25
L = 200 H, T
j
= 25 C
E
AS
22
mJ
Power dissipation
T
C
= 25 C
P
tot
200
W
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Semiconductor Group
2
Jul-30-1996
BUP 313
Maximum Ratings
Parameter
Symbol
Values
Unit
DIN humidity category, DIN 40 040
-
E
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
R
thJC
0.63
K/W
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 0.35 mA
V
GE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 15 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 15 A,
T
j
= 125 C
V
GE
= 15 V,
I
C
= 30 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 30 A,
T
j
= 125 C
V
CE(sat)
-
-
-
-
4.3
3.4
3.3
2.7
-
-
3.9
3.2
Zero gate voltage collector current
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 C
I
CES
-
-
0.8
mA
Gate-emitter leakage current
V
GE
= 25 V,
V
CE
= 0 V
I
GES
-
-
100
nA
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 15 A
g
fs
-
12
-
S
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
iss
-
1000
1350
pF
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
oss
-
150
225
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
rss
-
70
100
Semiconductor Group
3
Jul-30-1996
BUP 313
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at
T
j
= 125 C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 15 A
R
Gon
= 82
t
d(on)
-
70
100
ns
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 15 A
R
Gon
= 82
t
r
-
45
70
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 82
t
d(off)
-
400
530
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 82
t
f
-
70
95
Semiconductor Group
5
Jul-30-1996
BUP 313
Typ. output characteristics
I
C
=
f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0
1
2
3
V
5
V
CE
0
2
4
6
8
10
12
14
16
18
20
22
24
26
A
30
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 125 C
0
1
2
3
V
5
V
CE
0
2
4
6
8
10
12
14
16
18
20
22
24
26
A
30
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
=
f (V
GE
)
parameter:
t
p
= 80 s,
V
CE
= 20 V
0
2
4
6
8
10
V
14
V
GE
0
2
4
6
8
10
12
14
16
18
20
22
24
26
A
30
I
C
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