Semiconductor Group
1
Jul-30-1996
BUP 306D
IGBT With Antiparallel Diode
Preliminary data
Low forward voltage drop
High switching speed
Low tail current
Latch-up free
Including fast free-wheel diode
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
CE
I
C
Package
Ordering Code
BUP 306D
1200V 23A
TO-218 AB
Q67040-A4222-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE
1200
V
Collector-gate voltage
R
GE
= 20 k
V
CGR
1200
Gate-emitter voltage
V
GE
20
DC collector current
T
C
= 25 C
T
C
= 90 C
I
C
15
23
A
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 C
T
C
= 90 C
I
Cpuls
30
46
Diode forward current
T
C
= 90 C
I
F
18
Pulsed diode current,
t
p
= 1 ms
T
C
= 25 C
I
Fpuls
108
Power dissipation
T
C
= 25 C
P
tot
165
W
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Semiconductor Group
2
Jul-30-1996
BUP 306D
Maximum Ratings
Parameter
Symbol
Values
Unit
DIN humidity category, DIN 40 040
-
E
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
R
thJC
0.63
K/W
Diode thermal resistance, chip case
R
thJC
D
1.25
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 0.7 mA
V
GE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 10 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 10 A,
T
j
= 125 C
V
CE(sat)
-
-
3.8
2.8
4.3
3.3
Zero gate voltage collector current
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 C
I
CES
-
-
0.4
mA
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
I
GES
-
-
100
nA
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 10 A
g
fs
3.5
5.5
-
S
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
iss
-
1300
1750
pF
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
oss
-
100
150
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
rss
-
50
75
Semiconductor Group
3
Jul-30-1996
BUP 306D
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at
T
j
= 125 C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 10 A
R
Gon
= 47
t
d(on)
-
40
60
ns
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 10 A
R
Gon
= 47
t
r
-
30
50
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 10 A
R
Goff
= 47
t
d(off)
-
200
300
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 10 A
R
Goff
= 47
t
f
-
20
30
Total turn-off loss energy
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 10 A
R
Goff
= 47
E
off
-
1.3
-
mWs
Free-Wheel Diode
Diode forward voltage
I
F
= 15 A,
V
GE
= 0 V,
T
j
= 25 C
I
F
= 15 A,
V
GE
= 0 V,
T
j
= 125 C
V
F
-
-
1.9
2.4
-
2.9
V
Reverse recovery time
I
F
= 15 A,
V
R
= -600 V,
V
GE
= 0 V
d
i
F
/
d
t = -800 A/s
T
j
= 25 C
T
j
= 125 C
t
rr
-
-
100
-
150
-
ns
Reverse recovery charge
I
F
= 15 A,
V
R
= 0 V,
d
i
F
/
d
t = -800 A/s
I
F
= 15 A,
V
GE
= 0 V,
T
j
= 25 C
V
R
= 0 V,
d
i
F
/
d
t = -800 A/s,
T
j
= 125 C
Q
rr
-
-
3
1
5.4
1.8
C
Semiconductor Group
4
Jul-30-1996
BUP 306D
Power dissipation
P
tot
=
(T
C
)
parameter: T
j
150 C
0
20
40
60
80
100
120
C
160
T
C
0
20
40
60
80
100
120
140
W
170
P
tot
Collector current
I
C
=
(T
C
)
parameter: V
GE
15 V , T
j
150 C
0
20
40
60
80
100
120
C
160
T
C
0
2
4
6
8
10
12
14
16
18
20
A
24
I
C
Safe operating area
I
C
=
(V
CE
)
parameter: D = 0, T
C
= 25C , T
j
150 C
-1
10
0
10
1
10
2
10
A
I
C
10
0
10
1
10
2
10
3
V
V
CE
DC
10 ms
1 ms
100 s
t
p
= 13.0s
Transient thermal impedance IGBT
Z
th JC
=
(t
p
)
parameter: D = t
p
/ T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group
5
Jul-30-1996
BUP 306D
Typ. output characteristics
I
C
= f
(
V
CE
)
parameter:
t
p
= 80 s,
T
j
= 125
C
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
P
= 80 s,
V
CE
= 20 V,
T
j
= 25 C
Typ. saturation characteristics
V
CE(sat)
=
f (V
GE
)
parameter:
T
j
= 25 C
Typ. saturation characteristics
V
CE(sat)
=
f
(
V
GE
)
parameter:
T
j
= 125 C
Semiconductor Group
6
Jul-30-1996
BUP 306D
Typ. gate charge
V
GE
=
(Q
Gate
)
parameter: I
C puls
= 10 A
0
20
40
60
80
100
nC
130
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
800 V
400 V
Typ. capacitances
C = f (V
CE
)
parameter: V
GE
= 0 V, f = 1 MHz
Short circuit safe operating area
I
Csc
= f (V
CE
) , T
j
= 150C
parameter: V
GE
= 15 V, t
sc
10 s, L < 25 nH
0
200
400
600
800
1000 1200
V
1600
0
2
4
6
10
I
Csc
/I
C(90C)
Reverse biased safe operating area
I
Cpuls
= f (V
CE
) , T
j
= 150C
parameter: V
GE
= 15 V
0
200
400
600
800
1000 1200
V
1600
0.0
0.5
1.0
1.5
2.5
I
Cpuls
/I
C
Semiconductor Group
7
Jul-30-1996
BUP 306D
Typ. switching time
t = f (R
G
), inductive load, T
j
= 125 C
parameter:
V
CE
= 600 V,
V
GE
= 15 V,
I
C
= 10 A
Typ. forward characteristics
I
F
=
f (V
F
)
parameter:
T
j
0.0
0.5
1.0
1.5
2.0
V
3.0
V
F
0
2
4
6
8
10
12
14
16
18
20
22
24
26
A
30
I
F
T
j
=25C
=125C
j
T
Transient thermal impedance Diode
Z
th JC
=
(
t
p
)
parameter:
D = t
p
/
T
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group
8
Jul-30-1996
BUP 306D
Package Outlines
Dimensions in mm
Weight:
PDF 
ZIP