Semiconductor Group
1
Jul-31-1996
BUP 400D
IGBT With Antiparallel Diode
Preliminary data
Low forward voltage drop
High switching speed
Low tail current
Latch-up free
Including fast free-wheel diode
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
CE
I
C
Package
Ordering Code
BUP 400D
600V
22A
TO-220 AB
Q67040-A4423-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE
600
V
Collector-gate voltage
R
GE
= 20 k
V
CGR
600
Gate-emitter voltage
V
GE
20
DC collector current
T
C
= 25 C
T
C
= 90 C
I
C
14
22
A
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 C
T
C
= 90 C
I
Cpuls
28
44
Diode forward current
T
C
= 90 C
I
F
11
Pulsed diode current,
t
p
= 1 ms
T
C
= 25 C
I
Fpuls
72
Power dissipation
T
C
= 25 C
P
tot
100
W
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Semiconductor Group
2
Jul-31-1996
BUP 400D
Maximum Ratings
Parameter
Symbol
Values
Unit
DIN humidity category, DIN 40 040
-
E
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
R
thJC
1.25
K/W
Diode thermal resistance, chip case
R
thJC
D
2.5
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 0.35 mA
V
GE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 10 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 10 A,
T
j
= 125 C
V
GE
= 15 V,
I
C
= 20 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 20 A,
T
j
= 125 C
V
CE(sat)
-
-
-
-
3.3
3
2.2
2.1
-
-
2.8
2.7
Zero gate voltage collector current
V
CE
= 600 V,
V
GE
= 0 V,
T
j
= 25 C
I
CES
-
-
160
A
Gate-emitter leakage current
V
GE
= 25 V,
V
CE
= 0 V
I
GES
-
-
100
nA
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 10 A
g
fs
2
-
-
S
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
iss
-
570
760
pF
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
oss
-
80
120
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
rss
-
50
75
Semiconductor Group
3
Jul-31-1996
BUP 400D
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at
T
j
= 125 C
Turn-on delay time
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 10 A
R
Gon
= 100
t
d(on)
-
45
70
ns
Rise time
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 10 A
R
Gon
= 100
t
r
-
60
90
Turn-off delay time
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 10 A
R
Goff
= 100
t
d(off)
-
250
340
Fall time
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 10 A
R
Goff
= 100
t
f
-
500
680
Free-Wheel Diode
Diode forward voltage
I
F
= 10 A,
V
GE
= 0 V,
T
j
= 25 C
I
F
= 10 A,
V
GE
= 0 V,
T
j
= 125 C
V
F
-
-
-
1.65
-
-
V
Reverse recovery time
I
F
= 10 A,
V
R
= -300 V,
V
GE
= 0 V
d
i
F
/
d
t = -100 A/s
T
j
= 25 C
T
j
= 125 C
t
rr
-
-
100
60
150
100
ns
Reverse recovery charge
I
F
= 10 A,
V
R
= -300 V,
V
GE
= 0 V
d
i
F
/
d
t = -100 A/s
T
j
= 25 C
T
j
= 125 C
Q
rr
-
-
0.4
0.2
0.74
0.37
C
Semiconductor Group
5
Jul-31-1996
BUP 400D
Typ. output characteristics
I
C
=
f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0
1
2
3
V
5
V
CE
0
2
4
6
8
10
12
14
16
A
20
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 125 C
0
1
2
3
V
5
V
CE
0
2
4
6
8
10
12
14
16
A
20
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
=
f (V
GE
)
parameter:
t
p
= 80 s,
V
CE
= 20 V
0
2
4
6
8
10
V
14
V
GE
0
2
4
6
8
10
12
14
16
A
20
I
C
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