Semiconductor Group
1
28/Jan/1998
BUZ 110 SL
SPP80N05L
SIPMOS
Power Transistor
N channel
Enhancement mode
Logic Level
Avalanche-rated
dv/dt rated
175C operating temperature
also in SMD available
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on)
Package
Ordering Code
BUZ 110 SL
55 V
80 A
0.015
TO-220 AB
Q67040-S4004-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 25 C
T
C
= 100 C
I
D
59
80
A
Pulsed drain current
T
C
= 25 C
I
Dpuls
320
Avalanche energy, single pulse
I
D
= 80 A, V
DD
= 25 V, R
GS
= 25
L = 144 H, T
j
= 25 C
E
AS
460
mJ
Avalanche current,limited by T
jmax
I
AR
80
A
Avalanche energy,periodic limited by T
jmax
E
AR
20
mJ
Reverse diode dv/dt
I
S
= 80 A, V
DS
= 40 V, di
F
/dt = 200 A/s
T
jmax
= 175 C
dv/dt
6
kV/s
Gate source voltage
V
GS
14
V
Power dissipation
T
C
= 25 C
P
tot
200
W
Semiconductor Group
2
28/Jan/1998
BUZ 110 SL
SPP80N05L
Maximum Ratings
Parameter
Symbol
Values
Unit
Operating temperature
T
j
-55 ... + 175
C
Storage temperature
T
stg
-55 ... + 175
Thermal resistance, junction - case
R
thJC
0.75
K/W
Thermal resistance, junction - ambient
R
thJA
62
IEC climatic category, DIN IEC 68-1
55 / 175 / 56
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V, I
D
= 0.25 mA, T
j
= 25 C
V
(BR)DSS
55
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 200 A
V
GS(th)
1.2
1.67
2
Zero gate voltage drain current
V
DS
= 50 V, V
GS
= 0 V, T
j
= -40 C
V
DS
= 50 V, V
GS
= 0 V, T
j
= 25 C
V
DS
= 50 V, V
GS
= 0 V, T
j
= 150 C
I
DSS
-
-
-
-
0.1
-
100
1
0.1
A
Gate-source leakage current
V
GS
= 20 V, V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-resistance
V
GS
= 4.5 V, I
D
= 59 A
V
GS
= 10 V, I
D
= 59 A
R
DS(on)
-
-
0.0075
0.012
0.01
0.015
Semiconductor Group
3
28/Jan/1998
BUZ 110 SL
SPP80N05L
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 59 A
g
fs
30
-
-
S
Input capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
iss
-
2600
3250
pF
Output capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
oss
-
750
940
Reverse transfer capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
rss
-
395
495
Turn-on delay time
V
DD
= 30 V, V
GS
= 4.5 V, I
D
= 80 A
R
G
= 2
t
d(on)
-
20
30
ns
Rise time
V
DD
= 30 V, V
GS
= 4.5 V, I
D
= 80 A
R
G
= 2
t
r
-
70
105
Turn-off delay time
V
DD
= 30 V, V
GS
= 4.5 V, I
D
= 80 A
R
G
= 2
t
d(off)
-
45
70
Fall time
V
DD
= 30 V, V
GS
= 4.5 V, I
D
= 80 A
R
G
= 2
t
f
-
25
40
Gate charge at threshold
V
DD
= 40 V, I
D
0.1 A, V
GS
=0 to 1 V
Q
g(th)
-
4
6
nC
Gate charge at 5.0 V
V
DD
= 40 V, I
D
= 80 A, V
GS
=0 to 5 V
Q
g(5)
-
65
100
Gate charge total
V
DD
= 40 V, I
D
= 80 A, V
GS
=0 to 10 V
Q
g(total)
-
110
165
Gate plateau voltage
V
DD
= 40 V, I
D
= 80 A
V
(plateau)
-
4.5
-
V
Semiconductor Group
4
28/Jan/1998
BUZ 110 SL
SPP80N05L
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 C
I
S
-
-
80
A
Inverse diode direct current,pulsed
T
C
= 25 C
I
SM
-
-
320
Inverse diode forward voltage
V
GS
= 0 V, I
F
= 160 A
V
SD
-
1.2
2
V
Reverse recovery time
V
R
= 30 V, I
F=
l
S,
di
F
/dt = 100 A/s
t
rr
-
90
135
ns
Reverse recovery charge
V
R
= 30 V, I
F=
l
S,
di
F
/dt = 100 A/s
Q
rr
-
0.14
0.21
C
Semiconductor Group
5
28/Jan/1998
BUZ 110 SL
SPP80N05L
Power dissipation
P
tot
=
(
T
C
)
0
20
40
60
80
100
120
140
C
180
T
C
0
20
40
60
80
100
120
140
160
180
W
220
P
tot
Drain current
I
D
=
(
T
C
)
parameter:
V
GS
4 V
0
20
40
60
80
100
120
140
C
180
T
C
0
10
20
30
40
50
60
70
A
90
I
D
Safe operating area
I
D
=
(
V
DS
)
parameter:
D = 0, T
C
= 25C
0
10
1
10
2
10
3
10
A
I
D
10
0
10
1
10
2
V
V
DS
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 s
10 s
t
p
= 8.7s
Transient thermal impedance
Z
th JC
=
(
t
p
)
parameter:
D = t
p
/
T
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
PDF 
ZIP