Mini PROFET BSP 452
Semiconductor Group
1
08.96
MiniPROFET
High-side switch
Short-circuit protection
Input protection
Overtemperature protection with hysteresis
Overload protection
Overvoltage protection
Switching inductive load
Clamp of negative output voltage with inductive loads
Undervoltage shutdown
Maximum current internally limited
Electrostatic discharge (ESD) protection
Reverse battery protection
1)
Package: SOT 223
Type
Ordering code
BSP 452
Q67000-S271
Application
C compatible power switch for 12 V DC grounded loads
All types of resistive, inductive and capacitive loads
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically
integrated in Smart SIPMOS
technology. Fully protected by embedded protection functions.
Blockdiagramm:
IN
3
R
in
+ Vbb
Signal GND
ESD
MINI-PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
Load GND
Load
V
Logic
Overvoltage
protection
ESD-
Diode
1) With resistor RGND=150
in GND connection, resistor in series with IN connections reverse load current
limited by connected load.
1
2
3
4
Mini PROFET BSP 452
Semiconductor Group
2
Pin
Symbol
Function
1
OUT
O
Output to the load
2
GND
-
Logic ground
3
IN
I
Input, activates the power switch in case of logical high signal
4
Vbb
+
Positive power supply voltage
Maximum Ratings
at
T
j
= 25 C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage
V
bb
40
V
Load current
self-limited
I
L
I
L(SC)
A
Maximum input voltage
2)
V
IN
-5.0...
V
bb
V
Maximum input current
I
IN
5
mA
Inductive load switch-off energy dissipation,
single pulse
I
L
= 0.5A , T
A
= 150C
(not tested, specified by design)
E
AS
0.5
J
Load dump protection
3
)
V
LoadDump
=
U
A
+
V
s
R
L
= 24
R
I
=2
,
t
d
=400ms, IN= low or high,
U
A
=12V
R
L
= 80
(not tested, specified by design)
V
Load dump
4
)
47
67
V
Electrostatic discharge capability (ESD)
5)
PIN 3
PIN 1,2,4
V
ESD
1
2
kV
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Max. power dissipation (DC)
6)
T
A
= 25 C
P
tot
1.8
W
Thermal resistance
chip - soldering point:
chip - ambient:
6)
R
thJS
R
thJA
7
70
K/W
2) At V
IN > Vbb, the input current is not allowed to exceed
5 mA.
3) Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150
resistor in the GND connection
A resistor for the protection of the input is integrated.
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) HBM according to MIL-STD 883D, Methode 3015.7
6) BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for V
bb connection
Mini PROFET BSP 452
Semiconductor Group
3
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb = 13.5V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1)
I
L
= 0.5 A,
V
in
= high
T
j
= 25C
T
j
= 150C
R
ON
--
--
0.16
--
0.2
0.4
Nominal load current (pin 4 to 1)
7)
ISO Standard:
V
ON
=
V
bb
-
V
OUT
= 0.5 V
T
S
= 85 C
I
L(ISO)
1.7
--
--
A
Turn-on time
to 90%
V
OUT
Turn-off time
to 10%
V
OUT
R
L
= 24
t
on
t
off
--
--
60
60
100
150
s
Slew rate on
10 to 30%
V
OUT
,
R
L
= 24
d
V /dt
on
--
2
4
V/
s
Slew rate off
70 to 40%
V
OUT
,
R
L
= 24
-d
V/dt
off
--
2
4
V/
s
Input
Allowable input voltage range, (pin 3 to 2)
V
IN
-3.0
--
V
bb
V
Input turn-on threshold voltage
T
j
= -40...+150C
V
IN(T+)
--
--
3.5
V
Input turn-off threshold voltage
T
j
= -40...+150C
V
IN(T-)
1.5
--
--
V
Input threshold hysteresis
V
IN(T)
--
0.5
--
V
Off state input current (pin 3)
V
IN(off)
= 1.2 V
T
j
= -40...+150C
I
IN(off)
10
--
60
A
On state input current (pin 3)
V
IN(on)
= 3.0 V to
V
bb
T
j
= -40...+150C
I
IN(on)
10
--
100
A
Input resistance
R
IN
1.5
2.8
3.5
k
7
)
IL(ISO) characterizes the MOSFET part of the device and may be higher than the shortcircuit current IL(SC) of the whole device
Mini PROFET BSP 452
Semiconductor Group
4
Parameter and Conditions
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb = 13.5V unless otherwise specified
min
typ
max
Operating Parameters
Operating voltage
8
)
T
j
=-40...+150C
V
bb(on)
5.0
--
34
V
Undervoltage shutdown
T
j
=-40...+150C
V
bb(under)
3.5
--
5
V
Undervoltage restart
T
j
=-40...+25C
T
j
=+150C
V
bb(u rst)
--
--
6.5
7.0
V
Undervoltage restart of charge pumpe
see diagram page 7
V
bb(ucp)
--
5.6
7
V
Undervoltage hysteresis
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
V
bb(under)
--
0.3
--
V
Overvoltage shutdown
T
j
=-40...+150C
V
bb(over)
34
--
42
V
Overvoltage restart
T
j
=-40...+150C
V
bb(o rst)
33
--
--
V
Overvoltage hysteresis
T
j
=-40...+150C
V
bb(over)
--
0.7
--
V
Standby current (pin 4),
V
in
= low
T
j
=-40...+150C
I
bb(off)
--
10
25
A
Operating current (pin 2),
V
in
= 5 V
I
GND
--
1
1.6
mA
leakage current (pin 1)
V
in
= low
T
j
=-40...+25C
T
j
=150C
I
L(off)
--
2
5
7
A
Protection Functions
Current limit (pin 4 to 1)
T
j
= 25C
V
bb
= 20V
T
j
= -40...+150C
I
L(SC)
0.7
0.7
1.5
--
2
2.4
A
Overvoltage protection
Ibb=4mA T
j
=-40...+150C
V
bb(AZ)
41
--
--
V
Output clamp (ind. load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL),
I
bb
= 4mA
V
ON(CL)
41
47
--
V
Thermal overload trip temperature
T
jt
150
--
--
C
Thermal hysteresis
T
jt
--
10
--
K
Inductive load switch-off energy dissipation
9
)
T
j Start
= 150 C, single pulse,
I
L
= 0.5 A,
V
bb
= 12 V
(not tested, specified by design)
E
AS
--
--
0.5
J
Reverse battery (pin 4 to 2)
10
)
(not tested, specified by design)
-
V
bb
--
--
30
V
8) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT
Vbb - 2 V
9) While demagnetizing load inductance, dissipated energy in PROFET is EAS=
VON(CL) * iL(t) dt, approx.
EAS= 1/2 * L * I
2
L
* (
VON(CL)
VON(CL) - Vbb
)
10) Requires 150
resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the
connected load.
Mini PROFET BSP 452
Semiconductor Group
5
Max. allowable power dissipation
Ptot = f (TA,TSP)
Ptot [W]
0
2
4
6
8
10
12
14
16
18
0
25
50
75
100
125
150
T
A
T
SP
TA, TSP[C]
On state resistance (Vbb-pin to OUT-pin)
RON = f (Tj); Vbb = 13.5 V; IL = 0.5 A
RON [
]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
-50
-25
0
25
50
75
100
125
150
98%
Tj [C]
Current limit characteristic
IL(SC) = f (Von); (Von see testcircuit)
IL(SC) [A]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
2
4
6
8
10
12
14
25C
150C
-40C
Von [V]
Typ. input current
IIN = f (VIN); Vbb = 13,5 V
IIN [A]
0
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
14
-40C
+ 150C
+ 25C
VIN [V]
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