Semiconductor Group
07 / 1998
1
BSP 170 P
Preliminary data
SIPMOS
Power Transistor
P-Channel
Enhancement mode
Avalanche rated
dv/dt rated
Pin 3
Pin 2/4
Pin 1
G
D
S
Type
V
DS
I
D
R
DS(on)
@ V
GS
Package
Ordering Code
BSP 170 P
60 V
-1.9 A 0.3
V
GS
= -10 V SOT-223
Q67041-S4018
-
Maximum Ratings , at Tj = 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
= 25 C
T
A
= 70 C
I
D
-1.9
-1.5
A
Pulsed drain current
T
A
= 25 C
I
Dpulse
-7.6
Avalanche energy, single pulse
I
D
= -1.9 A, V
DD
= -25 V, R
GS
= 25
E
AS
70
mJ
Avalanche current,periodic limited by T
jmax
I
AR
-1.9
A
Avalanche energy,periodic limited by T
j(max)
E
AR
0.18
mJ
Reverse diode dv/dt
I
S
= -1.9 A, V
DD
V
(BR)DSS
, di/dt = 200 A/s,
T
jmax
= 150 C
dv/dt
6
kV/s
Gate source voltage
V
GS
20
V
Power dissipation
T
A
= 25 C
P
tot
1.8
W
Operating temperature
C
T
j
-55 ... +150
-55...+150
Storage temperature
T
stg
IEC climatic category; DIN IEC 68-1
55/150/56
Semiconductor Group
07 / 1998
2
BSP 170 P
Preliminary data
Electrical Characteristics
Parameter
Values
Symbol
Unit
at Tj = 25 C, unless otherwise specified
typ.
max.
min.
Thermal Characteristics
-
-
tbd
R
thJS
Thermal resistance,
junction -soldering point (Pin 4 )
K/W
-
-
tbd
-
-
70
R
thJA
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Static Characteristics
V
(BR)DSS
60
-
-
Drain- source breakdown voltage
V
GS
= 0 V, I
D
= -0.25 mA
V
V
GS(th)
-2.1
-4
-3
Gate threshold voltage, V
GS
= V
DS
I
D
= -460 A
I
DSS
-
-
-1
-100
A
-0.1
-
Zero gate voltage drain current
V
DS
= -60 V, V
GS
= 0 V, T
j
= 25 C
V
DS
= -60 V, V
GS
= 0 V, T
j
= 125 C
I
GSS
-
-10
Gate-source leakage current
V
GS
= -20 V, V
DS
= 0 V
nA
-100
R
DS(on)
-
0.175
0.3
Drain-Source on-state resistance
V
GS
= -10 V, I
D
= -1.9 A
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain
connection. PCB is vertical without blown air.
Semiconductor Group
07 / 1998
3
BSP 170 P
Preliminary data
Electrical Characteristics
Parameter
Symbol
Unit
Values
min.
typ.
max.
at Tj = 25 C, unless otherwise specified
Dynamic Characteristics
g
fs
1
-
2.5
Transconductance
V
DS
2*I
D
*R
DS(on)max
, I
D
= -1.9 A
S
C
iss
-
420
pF
335
Input capacitance
V
GS
= 0 V, V
DS
= -25 V, f = 1 MHz
C
oss
-
105
Output capacitance
V
GS
= 0 V, V
DS
= -25 V, f = 1 MHz
135
C
rss
-
65
85
Reverse transfer capacitance
V
GS
= 0 V, V
DS
= -25 V, f = 1 MHz
ns
t
d(on)
14
-
Turn-on delay time
V
DD
= -30 V, V
GS
= -10 V, I
D
= -1.9 A,
R
G
= 6
21
Rise time
V
DD
= -30 V, V
GS
= -10 V, I
D
= -1.9 A,
R
G
= 6
t
r
45
-
30
190
-
125
t
d(off)
Turn-off delay time
V
DD
= -30 V, V
GS
= -10 V, I
D
= -1.9 A,
R
G
= 6
Fall time
V
DD
= -30 V, V
GS
= -10 V, I
D
= -1.9 A,
R
G
= 6
-
65
t
f
100
Semiconductor Group
07 / 1998
4
BSP 170 P
Preliminary data
Electrical Characteristics
Parameter
Symbol
Unit
Values
at Tj = 25 C, unless otherwise specified
min.
max.
typ.
Dynamic Characteristics
-
0.36
0.54
Q
G(th)
nC
Gate charge at threshold
V
DD
= -48 V, I
D
-
0,1 A, V
GS
= 0 to - 1 V
Gate charge at V
gs
=7V
V
DD
= -24 V, I
D
= -1.9 A, V
GS
= 0 to-7 V
-
7.8
11.7
nC
Q
g(7)
15
10
Gate charge total
V
DD
= -48 V, I
D
= -1.9 A, V
GS
= 0 to -10 V
-
Q
g
Gate plateau voltage
V
DD
= -48 V, I
D
= -1.9 A
V
V
(plateau)
3.85
-
-
Reverse Diode
-1.9
A
-
Inverse diode continuous forward current
T
A
= 25 C
-
I
S
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-7.6
-
-1.2
-0.85
V
V
SD
-
Inverse diode forward voltage
V
GS
= 0 V, I
F
= -3.8 A
90
60
ns
Reverse recovery time
V
R
= -30 V, I
F
=I
S
, di
F
/dt = 100 A/s
-
t
rr
100
Q
rr
Reverse recovery charge
V
R
= -30 V, I
F=
l
S
, di
F
/dt = 100 A/s
150
nC
-
Semiconductor Group
07 / 1998
5
BSP 170 P
Preliminary data
Power Dissipation
P
tot
= f(T
A)
0
20
40
60
80
100
120
C
160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
W
1.8
BSP 170 P
P
tot
Drain current
I
D
= f (T
A)
parameter:VGS
-10V
0
20
40
60
80
100
120
C
160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
A
2.0
BSP 170 P
I
D
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