Semiconductor Group
1
Dec-07-1995
BUP 307
IGBT
Preliminary data
Low forward voltage drop
High switching speed
Low tail current
Latch-up free
Avalanche rated
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
CE
I
C
Package
Ordering Code
BUP 307
1200V 35A
TO-218 AB
Q67078-A4201-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE
1200
V
Collector-gate voltage
R
GE
= 20 k
V
CGR
1200
Gate-emitter voltage
V
GE
20
DC collector current
T
C
= 25 C
T
C
= 90 C
I
C
23
35
A
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 C
T
C
= 90 C
I
Cpuls
46
70
Avalanche energy, single pulse
I
C
= 15 A,
V
CC
= 50 V,
R
GE
= 25
L = 200 H, T
j
= 25 C
E
AS
23
mJ
Power dissipation
T
C
= 25 C
P
tot
310
W
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Semiconductor Group
2
Dec-07-1995
BUP 307
Maximum Ratings
Parameter
Symbol
Values
Unit
DIN humidity category, DIN 40 040
-
E
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Thermal Resistance
IGBT thermal resistance, chip case
R
thJC
0.4
K/W
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 0.1 mA
V
GE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 15 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 15 A,
T
j
= 125 C
V
GE
= 15 V,
I
C
= 15 A,
T
j
= 150 C
V
CE(sat)
-
-
-
4
3.8
2.8
4.5
4.3
3.3
Zero gate voltage collector current
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 C
V
CE
= 1000 V,
V
GE
= 0 V,
T
j
= 125 C
I
CES
-
-
-
1
1000
250
A
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
I
GES
-
0.1
100
nA
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 15 A
g
fs
5.5
8
-
S
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
iss
-
2000
2700
pF
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
oss
-
160
240
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
rss
-
65
100
Semiconductor Group
3
Dec-07-1995
BUP 307
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at
T
j
= 125 C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 15 A
R
Gon
= 33
t
d(on)
-
30
45
ns
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 15 A
R
Gon
= 33
t
r
-
22
35
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 33
t
d(off)
-
230
310
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 33
t
f
-
20
28
Total turn-off loss energy
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 33
E
off
-
1.7
-
mWs
Semiconductor Group
4
Dec-07-1995
BUP 307
Power dissipation
P
tot
=
(
T
C
)
parameter:
T
j
150 C
0
20
40
60
80
100
120
C
160
T
C
0
40
80
120
160
200
240
W
320
P
tot
Collector current
I
C
=
(
T
C
)
parameter:
V
GE
15 V ,
T
j
150 C
0
20
40
60
80
100
120
C
160
T
C
0
4
8
12
16
20
24
28
A
36
I
C
Safe operating area
I
C
=
(
V
CE
)
parameter:
D = 0, T
C
= 25C ,
T
j
150 C
-1
10
0
10
1
10
2
10
A
I
C
10
0
10
1
10
2
10
3
V
V
CE
DC
10 ms
1 ms
100 s
10 s
t
p
= 3.5s
Transient thermal impedance IGBT
Z
th JC
=
(
t
p
)
parameter:
D = t
p
/
T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group
5
Dec-07-1995
BUP 307
Typ. output characteristics
I
C
= f
(
V
CE
)
parameter:
t
p
= 80 s,
T
j
= 125
C
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
P
= 80 s,
V
CE
= 20 V,
T
j
= 25 C
Typ. saturation characteristics
V
CE(sat)
=
f (V
GE
)
parameter:
T
j
= 25 C
Typ. saturation characteristics
V
CE(sat)
=
f (
V
GE
)
parameter:
T
j
= 125 C
Semiconductor Group
6
Dec-07-1995
BUP 307
Typ. gate charge
V
GE
=
(
Q
Gate
)
parameter:
I
C puls
= 20 A
0
20
40
60
80
100
120
140
nC
180
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
800 V
400 V
Typ. capacitances
C = f (V
CE
)
parameter:
V
GE
= 0 V,
f = 1 MHz
Typ. switching time
t = f(R
G
)
inductive load, with freewheel diode BYP 102
parameter:
T
j
= 125 C,
V
CE
= 600 V,
V
GE
= 15 V,
I
C
= 10 A
Semiconductor Group
7
Dec-07-1995
BUP 307
Package Outlines
Dimensions in mm
Weight: 8 g
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