Semiconductor Group
1
Jul-30-1996
BUP 302
IGBT
Preliminary data
Low forward voltage drop
High switching speed
Low tail current
Latch-up free
Avalanche rated
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
CE
I
C
Package
Ordering Code
BUP 302
1000V 12A
TO-218 AB
Q67078-A4205-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE
1000
V
Collector-gate voltage
R
GE
= 20 k
V
CGR
1000
Gate-emitter voltage
V
GE
20
DC collector current
T
C
= 25 C
T
C
= 90 C
I
C
8
12
A
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 C
T
C
= 90 C
I
Cpuls
16
24
Avalanche energy, single pulse
I
C
= 5 A,
V
CC
= 24 V,
R
GE
= 25
L = 3.3 mH, T
j
= 25 C
E
AS
10
mJ
Power dissipation
T
C
= 25 C
P
tot
125
W
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Semiconductor Group
2
Jul-30-1996
BUP 302
Maximum Ratings
Parameter
Symbol
Values
Unit
DIN humidity category, DIN 40 040
-
E
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
R
thJC
1
K/W
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 0.3 mA
V
GE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 5 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 5 A,
T
j
= 125 C
V
GE
= 15 V,
I
C
= 5 A,
T
j
= 150 C
V
CE(sat)
-
-
-
4
3.8
2.8
4.5
4.3
3.3
Zero gate voltage collector current
V
CE
= 1000 V,
V
GE
= 0 V,
T
j
= 25 C
V
CE
= 1000 V,
V
GE
= 0 V,
T
j
= 125 C
I
CES
-
-
-
1
300
100
A
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
I
GES
-
0.1
100
nA
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 1.5 A
g
fs
1.7
2.5
-
S
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
iss
-
650
870
pF
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
oss
-
50
80
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
rss
-
20
30
Semiconductor Group
3
Jul-30-1996
BUP 302
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at
T
j
= 125 C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 5 A
R
Gon
= 68
t
d(on)
-
30
50
ns
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 5 A
R
Gon
= 68
t
r
-
20
30
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 5 A
R
Goff
= 68
t
d(off)
-
180
270
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 5 A
R
Goff
= 68
t
f
-
15
25
Total turn-off loss energy
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 5 A
R
Goff
= 68
E
off
-
0.7
-
mWs
Semiconductor Group
5
Jul-30-1996
BUP 302
Typ. output characteristics
I
C
= f
(
V
CE
)
parameter:
t
p
= 80 s,
T
j
= 125
C
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
P
= 80 s,
V
CE
= 20 V,
T
j
= 25 C
Typ. saturation characteristics
V
CE(sat)
=
f (V
GE
)
parameter:
T
j
= 25 C
Typ. saturation characteristics
V
CE(sat)
=
f (
V
GE
)
parameter:
T
j
= 125 C
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