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Электронный компонент: Q67100-Q2080

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Semiconductor Group
1
16M
72-Bit Dynamic RAM Module
(ECC - Module )
HYM 72V1600GS-50/-60
HYM 72V1610GS-50/-60
Preliminary Information
16 777 216 words by 72-bit ECC - mode organization
Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
Single + 3.3V (
0.3V) supply
Low power dissipation
max. 6480 mW active (-50 version)
max. 5832 mW active (-60 version)
CMOS 108
mW
standby
LVTTL 180 mW standby
CAS-before-RAS refresh, RAS-only-refresh
18 decoupling capacitors mounted on substrate
All inputs, outputs and clock fully LVTTL & LVCMOS compatible
4 Byte interleave enabled, Dual Address inputs (A0/B0)
Buffered inputs excepts RAS and DQ
168 pin, dual read-out, Single in-Line Memory Module
Utilizes eighteen 16M
4 -DRAMs and four BiCMOS 8-bit buffers/line drivers VT244A
Two versions : HYM 72V1600GS with TSOPII-components (4 mm thickness)
HYM 72V1610GS with SOJ-components (9 mm thickness)
8192 refresh cycles / 128 ms with 13 / 11 addressing
Gold contact pad
double sided module with 38.1 mm (1500 mil) height
1
11.95
Semiconductor Group
1
16M
72-Bit Dynamic RAM Module
(ECC - Module )
HYM 72V1600GS-50/-60
HYM 72V1610GS-50/-60
Preliminary Information
16 777 216 words by 72-bit ECC - mode organization
Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
Single + 3.3V (
0.3V) supply
Low power dissipation
max. 6480 mW active (-50 version)
max. 5832 mW active (-60 version)
CMOS 108
mW
standby
LVTTL 180 mW standby
CAS-before-RAS refresh, RAS-only-refresh
18 decoupling capacitors mounted on substrate
All inputs, outputs and clock fully LVTTL & LVCMOS compatible
4 Byte interleave enabled, Dual Address inputs (A0/B0)
Buffered inputs excepts RAS and DQ
168 pin, dual read-out, Single in-Line Memory Module
Utilizes eighteen 16M
4 -DRAMs and four BiCMOS 8-bit buffers/line drivers VT244A
Two versions : HYM 72V1600GS with TSOPII-components (4 mm thickness)
HYM 72V1610GS with SOJ-components (9 mm thickness)
8192 refresh cycles / 128 ms with 13 / 11 addressing
Gold contact pad
double sided module with 38.1 mm (1500 mil) height
1
11.95
Semiconductor Group
2
HYM72V1600/10GS-50/-60
16M x 72-ECC Module
The HYM 72V1600/10GS-50/-60 is a 128 MByte DRAM module organized as 16 777 216 words by
72-bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 3164400BT/BJ
16M
4 DRAMs in 500 mil wide TSOPII or SOJ- packages mounted together with eighteen 0.2
F
ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using
four BiCMOS 8-bit buffers/line drivers.
Each HYB 3164400BT/BJ is described in the data sheet and is fully electrically tested and
processed according to Siemens standard quality procedure prior to module assembly. After
assembly onto the board, a further set of electrical tests is performed.
The density and speed of the module can be detected by the use of presence detect pins.
Ordering Information
Pin Names
Presence-Detect and ID-pin Truth Table:
Note: 1 = High Level ( Driver Output) , 0 = Low Level (Driver Output) for PDE active ( ground) . For PDE at a high
level all PD terminal are in tri-state.
Type
Ordering Code
Package
Descriptions
HYM 72V1600GS-50
L-DIM-168-7
3.3V 50ns DRAM module
HYM 72V1600GS-60
Q67100-Q2079
L-DIM-168-7
3.3V 60ns DRAM module
HYM 72V1610GS-50
L-DIM-168-7
3.3V 50ns DRAM module
HYM 72V1610GS-60
Q67100-Q2080
L-DIM-168-7
3.3V 60ns DRAM module
A0-A12,B0
Address Input
DQ0 - DQ71
Data Input/Output
RAS0, RAS2
Row Address Strobe
CAS0 , CAS2
Column Address Strobe
WE0, WE2
Read / Write Input
OE0, OE2
Output Enable
Vcc
Power (+3.3 Volt)
Vss
Ground
PD1 - PD8
Presence Detect Pins
PDE
Presence Detect Enable
ID0 , ID1
ID indentification bit
N.C.
No Connection
Module
ID0
ID1
PD1
PD2
PD3
PD4
PD5
PD6
PD7
PD8
HYM 72V1600GS-50
Vss
Vss
1
1
1
1
0
0
0
0
HYM 72V1600GS-60
Vss
Vss
1
1
1
1
0
1
1
0
Semiconductor Group
2
HYM72V1600/10GS-50/-60
16M x 72-ECC Module
The HYM 72V1600/10GS-50/-60 is a 128 MByte DRAM module organized as 16 777 216 words by
72-bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 3164400BT/BJ
16M
4 DRAMs in 500 mil wide TSOPII or SOJ- packages mounted together with eighteen 0.2
F
ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using
four BiCMOS 8-bit buffers/line drivers.
Each HYB 3164400BT/BJ is described in the data sheet and is fully electrically tested and
processed according to Siemens standard quality procedure prior to module assembly. After
assembly onto the board, a further set of electrical tests is performed.
The density and speed of the module can be detected by the use of presence detect pins.
Ordering Information
Pin Names
Presence-Detect and ID-pin Truth Table:
Note: 1 = High Level ( Driver Output) , 0 = Low Level (Driver Output) for PDE active ( ground) . For PDE at a high
level all PD terminal are in tri-state.
Type
Ordering Code
Package
Descriptions
HYM 72V1600GS-50
L-DIM-168-7
3.3V 50ns DRAM module
HYM 72V1600GS-60
Q67100-Q2079
L-DIM-168-7
3.3V 60ns DRAM module
HYM 72V1610GS-50
L-DIM-168-7
3.3V 50ns DRAM module
HYM 72V1610GS-60
Q67100-Q2080
L-DIM-168-7
3.3V 60ns DRAM module
A0-A12,B0
Address Input
DQ0 - DQ71
Data Input/Output
RAS0, RAS2
Row Address Strobe
CAS0 , CAS2
Column Address Strobe
WE0, WE2
Read / Write Input
OE0, OE2
Output Enable
Vcc
Power (+3.3 Volt)
Vss
Ground
PD1 - PD8
Presence Detect Pins
PDE
Presence Detect Enable
ID0 , ID1
ID indentification bit
N.C.
No Connection
Module
ID0
ID1
PD1
PD2
PD3
PD4
PD5
PD6
PD7
PD8
HYM 72V1600GS-50
Vss
Vss
1
1
1
1
0
0
0
0
HYM 72V1600GS-60
Vss
Vss
1
1
1
1
0
1
1
0
Semiconductor Group
3
HYM72V1600/10GS-50/-60
16M x 72-ECC Module
Pin Configuration
PIN #
Symbol
PIN #
Symbol
PIN #
Symbol
PIN #
Symbol
1
VSS
43
VSS
85
VSS
127
VSS
2
DQ0
44
OE2
86
DQ36
128
NC
3
DQ1
45
RAS2
87
DQ37
129
NC
4
DQ2
46
CAS4
88
DQ38
130
NC
5
DQ3
47
NC
89
DQ39
131
NC
6
VCC
48
WE2
90
VCC
132
PDE
7
DQ4
49
VCC
91
DQ40
133
VCC
8
DQ5
50
NC
92
DQ41
134
NC
9
DQ6
51
NC
93
DQ42
135
NC
10
DQ7
52
DQ18
94
DQ43
136
DQ54
11
DQ8
53
DQ19
95
DQ44
137
DQ55
12
VSS
54
VSS
96
VSS
138
VSS
13
DQ9
55
DQ20
97
DQ45
139
DQ56
14
DQ10
56
DQ21
98
DQ46
140
DQ57
15
DQ11
57
DQ22
99
DQ47
141
DQ58
16
DQ12
58
DQ23
100
DQ48
142
DQ59
17
DQ13
59
VCC
101
DQ49
143
VCC
18
VCC
60
DQ24
102
VCC
144
DQ60
19
DQ14
61
NC
103
DQ50
145
NC
20
DQ15
62
NC
104
DQ51
146
NC
21
DQ16
63
NC
105
DQ52
147
NC
22
DQ17
64
NC
106
DQ53
148
NC
23
VSS
65
DQ25
107
VSS
149
DQ61
24
NC
66
DQ26
108
NC
150
DQ62
25
NC
67
DQ27
109
NC
151
DQ63
26
VCC
68
VSS
110
VCC
152
VSS
27
WE0
69
DQ28
111
NC
153
DQ64
28
CAS0
70
DQ29
112
NC
154
DQ65
29
NC
71
DQ30
113
NC
155
DQ66
30
RAS0
72
DQ31
114
NC
156
DQ67
31
OE0
73
VCC
115
NC
157
VCC
32
VSS
74
DQ32
116
VSS
158
DQ68
33
A0
75
DQ33
117
A1
159
DQ69
34
A2
76
DQ34
118
A3
160
DQ70
35
A4
77
DQ35
119
A5
161
DQ71
36
A6
78
VSS
120
A7
162
VSS
37
A8
79
PD1
121
A9
163
PD2
38
A10
80
PD3
122
A11
164
PD4
39
A12
81
PD5
123
NC
165
PD6
40
VCC
82
PD7
124
VCC
166
PD8
41
NC
83
ID0 (VSS)
125
NC
167
ID1 (VSS)
42
NC
84
VCC
126
B0
168
VCC