Semiconductor Group
1
NPN Silicon AF Transistors
BC 635
... BC 639
5.91
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BC 635
BC 637
BC 639
Q68000-A3360
Q68000-A2285
Q68000-A3361
TO-92
E
C
B
1
2
3
If desired, selected transistors, type BC 63
5
10 (
h
FE
= 63 ... 160), or BC 63
5
16
(
h
FE
= 100 ... 250) are available. Ordering codes upon request.
1)
For detailed information see chapter Package Outlines.
q
High current gain
q
High collector current
q
Low collector-emitter saturation voltage
q
Complementary types: BC 636, BC 638,
BC 640 (PNP)
1
2
3
Semiconductor Group
2
BC 635
... BC 639
Maximum Ratings
Parameter
Values
Unit
Collector-emitter voltage
V
Peak collector current
Collector current
A
Junction temperature
C
Total power dissipation,
T
C
= 90 C
1)
W
Storage temperature range
Collector-base voltage
Thermal Resistance
Junction - ambient
1)
156
K/W
60
1
1.5
0.8 (1)
150
65 ... + 150
Emitter-base voltage
Base current
mA
100
Junction - case
2)
75
45
80
60
45
100
BC 637
BC 635
BC 639
5
Peak base current
200
Symbol
V
CE0
I
CM
I
C
T
j
P
tot
T
stg
V
CB0
R
th JA
V
EB0
I
B
R
th JC
I
BM
1)
If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm
10 mm large copper area
for the collector terminal,
R
th JA
= 125 K/W and thus
P
tot max
= 1 W at
T
A
= 25 C.
2)
Mounted on Al heat sink 15 mm
25 mm
0.5 mm.
Semiconductor Group
3
BC 635
... BC 639
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
I
C
= 5 mA;
V
CE
= 2 V
I
C
= 150 mA;
V
CE
= 2 V
1)
I
C
= 500 mA;
V
CE
= 2 V
1)
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BC 635
BC 637
BC 639
V
(BR)CE0
45
60
80
nA
A
Collector cutoff current
V
CB
= 30 V
V
CB
= 30 V,
T
A
= 150 C
I
CB0
100
20
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 100
A
BC 635
BC 637
BC 639
V
(BR)CB0
45
60
100
Emitter-base breakdown voltage
I
E
= 10
A
V
(BR)EB0
5
mV
Collector-emitter saturation voltage
1)
I
C
= 500 mA;
I
B
= 50 mA
V
CEsat
500
h
FE
25
40
25
250
V
Base-emitter voltage
1)
I
C
= 500 mA;
V
CE
= 2 V
V
BE)
1
nA
Emitter cutoff current
V
EB
= 4 V
I
EB0
100
AC characteristics
MHz
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 20 MHz
f
T
100
1)
Pulse test:
t
300
s,
D
2 %.
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