Semiconductor Group
1
PNP Silicon Switching Transistors
SMBT 2907
SMBT 2907 A
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SMBT 2907
SMBT 2907 A
Q68000-A6501
Q68000-A6474
s2B
s2F
SOT-23
1
2
3
B
E
C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
Collector current
I
C
mA
Junction temperature
T
j
C
Total power dissipation,
T
S
=
77 C
P
tot
mW
Storage temperature range
T
stg
Collector-base voltage
V
CB0
Thermal Resistance
Junction - ambient
2)
R
th JA
290
K/W
600
330
150
65 ... + 150
Emitter-base voltage
V
EB0
40
60
SMBT 2907
SMBT 2907 A
Junction - soldering point
R
th JS
220
60
5
q
High DC current gain: 0.1 mA to 500 mA
q
Low collector-emitter saturation voltage
q
Complementary types: SMBT 2222,
SMBT 2222 A (NPN)
5.91
Semiconductor Group
2
SMBT 2907
SMBT 2907 A
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Base-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
Collector-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
V
Collector-emitter breakdown voltage
I
C
= 10 mA
SMBT 2907
SMBT 2907 A
V
(BR)CE0
40
60
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 10
A
SMBT 2907
SMBT 2907 A
V
(BR)CB0
60
60
Emitter-base breakdown voltage
I
E
= 10
A
V
(BR)EB0
5
nA
Emitter cutoff current
V
EB
= 3 V
I
EB0
10
nA
nA
A
A
Collector cutoff current
V
CB
= 50 V
SMBT 2907
V
CB
= 50 V
SMBT 2907 A
V
CB
= 50 V,
T
A
= 150 C
SMBT 2907
V
CB
= 50 V,
T
A
= 150 C
SMBT 2907 A
I
CB0
20
10
20
10
DC current gain
1)
I
C
= 100
A,
V
CE
= 10 V
SMBT 2907
SMBT 2907 A
I
C
= 1 mA,
V
CE
= 10 V
SMBT 2907
SMBT 2907 A
I
C
= 10 mA,
V
CE
= 10 V
1)
SMBT 2907
SMBT 2907 A
I
C
= 150 mA,
V
CE
= 10 V
1)
SMBT 2907
SMBT 2907 A
I
C
= 500 mA,
V
CE
= 10 V
1)
SMBT 2907
SMBT 2907 A
h
FE
35
75
50
100
75
100
100
100
30
50
300
300
V
V
CEsat
0.4
1.6
V
BEsat
1.3
2.6
1)
Pulse test conditions:
t
300
s,
D
= 2 %.
Semiconductor Group
3
SMBT 2907
SMBT 2907 A
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Test circuits
Delay and rise time
Storage and fall time
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 20 V,
f
= 100 MHz
f
T
200
AC characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
8
Unit
Values
Parameter
Symbol
min.
typ.
max.
ns
ns
ns
ns
V
CC
= 30 V,
I
C
= 150 mA
, I
B1
= 15 mA
Delay time
Rise time
V
CC
= 6 V,
I
C
= 150 mA
, I
B1
=
I
B2
= 15 mA
Storage time
Fall time
t
d
t
r
t
stg
t
f
10
40
80
30
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
ibo
30
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