Semiconductor Group
1
GaAs MMIC
CGY 31
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Ordering Code
Package
1)
Circuit Diagram (Pin Configuration)
CGY 31 Q68000-A6887
TO-12
1 RF output,
V
S
2 Interstage,
V
S
3 RF input
4 RF and DC
ground, case
1)
For detailed information see chapter Package Outlines.
q
Two-stage monolithic microwave IC (MMIC amplifier)
q
All-gold metallization
q
Chip fully passivated
q
Operating voltage range: 3 to 6 V
q
50
input/output;
R
L
IN
R
L
OUT
>
10 dB
q
Gain: 18 dB at 1.6 GHz
q
Low noise figure: 4 dB at 1.6 GHz
q
3 dB bandwidth: 2 GHz
q
Hermetically sealed package
Semiconductor Group
2
CGY 31
Maximum Ratings
Parameter
Symbol
Values
Unit
Supply voltage,
T
C
80 C
V
S
6
V
Channel temperature
T
ch
150
C
Total power dissipation,
T
C
50 C
P
tot
2
W
Storage temperature range
T
stg
55 ... + 150
Thermal Resistance
Channel - case
R
thchC
50
K/W
Note: Exceeding any of the maximum ratings may cause permanent damage to the device.
Appropriate handling procedures are required to protect the electrostatic sensitive IC
against degradation due to excess voltage or excess current spikes. Excellent ground
connection of lead 4 and the package (e. g. soldered on microstripline laminate) is
required to achieve guaranteed RF performance and stable operation conditions and
provides adequate heat sink. Low parasitic capacitance of the bias network to port 2
gives optimum gain and flatness. Input and output connections must be DC isolated by
coupling capacitors.
Semiconductor Group
3
CGY 31
Electrical Characteristics
at
T
A
= 25 C,
V
S
= 4.5 V,
R
S
=
R
L
= 50
, unless otherwise specified,
(for application circuit see next page).
Unit
Values
Parameter
Symbol
min.
typ.
max.
mA
Operating current
I
op
160
200
Noise figure
f
= 800 MHz to 1800 MHz
F
4.0
5.0
dB
Power gain
f
= 800 MHz to 1800 MHz
G
15
18
Gain flatness
f
= 800 MHz to 1800 MHz
G
2.0
2.5
1 dB gain compression
f
= 800 MHz to 1800 MHz
P
1dB
19
dBm
Third order intercept point
two-tone intermodulation test
f
1
= 806 MHz,
f
2
= 810 MHz,
P
o
= 10 dBm (both carriers)
IP
3
31
32.5
Input return loss
f
= 800 MHz to 1800 MHz
RL
IN
13
9.5
Output return loss
f
= 800 MHz to 1800 MHz
RL
OUT
12
9.5
Semiconductor Group
4
CGY 31
Application Circuit
f
= 800 MHz to 1800 MHz
Legend of components
C
1
,
C
2
,
C
3
: 100 pF
: 1 nF
R
1
L
1
39
Resistor, e.g.
l
= 4 mm;
1.8 mm with axial leads
70 nH
Inductance, e.g. 8 turns, 0.25 mm enamelled copper wire
wound on
R
. The geometrical combination of
L
1
and
R
influences the frequency response.
L
2
40 nH
Inductance, e.g. 5 turns, 0.25 enamelled copper wire
wound on M3-nylon rod.
Chip capacitors
D
6 V 2
Zener diode, 1.3 W (type BZW 22 C 6 V 2).
Note: For lower frequencies (
f
= 100 ... 900 MHz) the performance of CGY 31 is comparable
to that of CGY 21, if an interstage circuit with
L
1
= 1
H is connected.
Semiconductor Group
5
CGY 31
Total power dissipation
P
tot
=
f
(
T
C
)
Operating current
I
op
=
f
(
V
S
)
Max. supply voltage
V
Smax
=
f
(
T
C
)
Semiconductor Group
6
CGY 31
Power gain
G
=
f
(
f
)
V
S
= 4.5 V,
R
S
=
R
L
= 50
Power output
G
=
f
(
P
out
)
V
S
= 4.5 V,
R
S
=
R
L
= 50
f
= 0.8 GHz
Power gain
G
=
f
(
V
S
)
R
S
=
R
L
= 50
Semiconductor Group
7
CGY 31
Third order intercept point
IP
3
=
f
(
V
S
)
f
= 0.8 GHz
, R
S
=
R
L
= 50
Noise figure
F
=
f
(
f
)
V
S
= 4.5 V,
R
S
=
R
L
= 50
Noise figure
F
=
f
(
V
S
)
R
S
=
R
L
= 50
The intermodulation ratio
d
IM
can easily be
determined.
d
IM
= 2 (
IP
3
P
0
)
IP
3
= Intercept point
d
IM
= Intermodulation ratio
P
0
= Power level of each carrier in dBm
Semiconductor Group
8
CGY 31
S
11
=
f
(
f
)
V
S
= 4.5 V,
Z
0
= 50
S Parameters
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.9
3.1
0.42
0.28
0.26
0.25
0.24
0.24
0.23
0.22
0.19
0.16
0.12
0.06
0.02
0.06
0.11
0.15
35
42
51
64
72
76
78
77
73
71
66
56
8
107
108
111
23
12
34
52
71
90
109
127
145
162
179
165
150
135
121
110
0.007
0.008
0.008
0.009
0.009
0.010
0.010
0.011
0.011
0.011
0.012
0.011
0.012
0.012
0.012
0.014
0.25
0.21
0.21
0.22
0.23
0.24
0.25
0.27
0.30
0.33
0.35
0.36
0.36
0.35
0.34
0.33
19
20
23
30
34
36
35
31
26
22
17
13
11
10
13
20
7.77
8.93
9.04
9.16
9.15
8.99
8.62
8.15
7.52
6.80
6.06
5.45
4.81
4.15
3.43
2.68
V
S
= 4.5 V,
Z
0
= 50
31
21
21
22
28
27
29
30
29
32
33
35
36
36
41
40
f
S
11
S
21
S
12
S
22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
S
12
=
f
(
f
)
V
S
= 4.5 V,
Z
0
= 50
Semiconductor Group
9
CGY 31
S Parameters (continued)
S
21
=
f
(
f
)
V
S
= 4.5 V,
Z
0
= 50
S
22
=
f
(
f
)
V
S
= 4.5 V,
Z
0
= 50
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