Semiconductor Group
1
NPN Silicon Darlington Transistor
SMBT 6427
5.91
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SMBT 6427
Q68000-A8320
s1V
SOT-23
B
E
C
1
2
3
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
40
V
Collector-base voltage
V
CB0
40
Collector current
I
C
500
mA
Total power dissipation,
T
S
= 74 C
P
tot
360
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
2)
R
th JA
280
K/W
Junction - soldering point
R
th JS
210
Emitter-base voltage
V
EB0
12
Peak collector current
I
CM
800
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
q
For general amplifier applications
q
High collector current
q
High current gain
Semiconductor Group
2
SMBT 6427
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
V
Collector-emitter breakdown voltage
I
C
= 10 mA
V
(BR)CE0
40
Collector-base breakdown voltage
I
C
= 100
A
V
(BR)CB0
40
Emitter-base breakdown voltage,
I
E
= 10
A
V
(BR)EB0
12
nA
A
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0,
T
A
= 150 C
I
CB0
50
10
DC current gain
I
C
= 10 mA,
V
CE
= 5 V
I
C
= 100 mA,
V
CE
= 5 V
I
C
= 500 mA,
V
CE
= 5 V
h
FE
10000
20000
14000
100000
200000
140000
V
Collector-emitter saturation voltage
1)
I
C
= 50 mA
, I
B
= 0.5 mA
I
C
= 500 mA,
I
B
= 0.5 mA
V
CEsat
1.2
1.5
Base-emitter saturation voltage
1)
I
C
= 500 mA
, I
B
= 0.5 mA
V
BEsat
2.0
nA
Emitter-base cutoff current
V
EB
= 10 V,
I
C
= 0
I
EB0
50
MHz
Transition frequency
I
C
= 50 mA
, V
CE
= 5 V,
f
= 100 MHz
f
T
130
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
7
AC characteristics
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
ibo
25
dB
Noise figure
I
C
= 1 mA
, V
CE
= 5 V,
R
S
= 100 k
f
= 1 kHz to 15 kHz
NF
10
A
Collector cutoff current
V
CE
= 30 V,
I
B
= 0
I
CE0
1
Base-emitter voltage
I
C
= 50 mA
, V
CE
= 5 V
V
BE(on)
1.75
1)
Pulse test conditions:
t
300
s,
D
2 %.
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