Semiconductor Group
1
NPN Silicon Transistors
SMBT 6428
SMBT 6429
5.91
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SMBT 6428
SMBT 6429
Q68000-A8321
Q68000-A8322
s1K
s1L
SOT-23
1
2
3
B
E
C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
Collector current
I
C
mA
Junction temperature
T
j
C
Total power dissipation,
T
S
=
71 C
P
tot
mW
Storage temperature range
T
stg
Collector-base voltage
V
CB0
Thermal Resistance
Junction - ambient
2)
R
th JA
310
K/W
200
330
150
65 ... + 150
Emitter-base voltage
V
EB0
50
45
SMBT 6428
SMBT 6429
Junction - soldering point
R
th JS
240
6
60
55
q
For AF input stages and driver applications
q
High current gain
q
Low collector-emitter saturation voltage
Semiconductor Group
2
SMBT 6428
SMBT 6429
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
Collector-emitter breakdown voltage
I
C
= 1 mA
SMBT 6428
SMBT 6429
V
(BR)CE0
50
45
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 10
A
SMBT 6428
SMBT 6429
V
(BR)CB0
60
55
Emitter-base breakdown voltage
I
E
= 1
A
V
(BR)EB0
6
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
I
EB0
10
nA
A
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0,
T
A
= 150 C
I
CB0
10
10
DC current gain
I
C
= 10
A,
V
CE
= 5 V
SMBT 6428
SMBT 6429
I
C
= 100
A,
V
CE
= 5 V
SMBT 6428
SMBT 6429
I
C
= 1 mA,
V
CE
= 5 V
SMBT 6428
SMBT 6429
I
C
= 10 mA,
V
CE
= 5 V
SMBT 6428
SMBT 6429
h
FE
250
500
250
500
250
500
250
500
650
1250
V
V
CEsat
0.2
0.6
Base-emitter voltage
I
C
= 1 mA,
V
CE
= 5 V
V
BE(on)
0.56
0.66
nA
Collector cutoff current
V
CE
= 30 V,
I
B
= 0
I
CE0
100
1)
Pulse test conditions:
t
300
s,
D
2 %.
Semiconductor Group
3
SMBT 6428
SMBT 6429
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
MHz
Transition frequency
I
C
= 5 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
100
700
AC characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
3
Unit
Values
Parameter
Symbol
min.
typ.
max.
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
ibo
15
Semiconductor Group
4
SMBT 6428
SMBT 6429
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Collector-base capacitance
C
CB0
=
f
(
V
CB0
)
Emitter-base capacitance
C
EB0
=
f
(
V
EB0
)
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 5 V
Semiconductor Group
5
SMBT 6428
SMBT 6429
Base-emitter saturation voltage
I
C
=
f
(
V
BEsat
),
h
FE
= 40
Collector current
I
C
=
f
(
V
BE
)
V
CE
= 1 V
Collector-emitter saturation voltage
I
C
=
f
(
V
CEsat
),
h
FE
= 40
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 1 V
Semiconductor Group
6
SMBT 6428
SMBT 6429
Collector cutoff current
I
CB0
=
f
(
T
A
)
V
CB
= 30 V
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