Semiconductor Group
1
NPN Silicon Switching Transistor
SXT 2222 A
5.91
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SXT 2222 A
Q68000-A8330
2P
SOT-89
B
C
E
1
2
3
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
40
V
Collector-base voltage
V
CB0
75
Collector current
I
C
600
mA
Total power dissipation,
T
S
= 120 C
P
tot
1
W
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
2)
R
th JA
90
K/W
Junction - soldering point
R
th JS
30
Emitter-base voltage
V
EB0
6
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
q
High current gain: 0.1 mA to 500 mA
q
Low collector-emitter saturation voltage
Semiconductor Group
2
SXT 2222 A
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
V
Collector-emitter breakdown voltage
I
C
= 10 mA
V
(BR)CE0
40
Collector-base breakdown voltage
I
C
= 10
A
V
(BR)CB0
75
Emitter-base breakdown voltage
I
E
= 10
A
V
(BR)EB0
6
nA
A
Collector-base cutoff current
V
CB
= 60 V,
I
E
= 0
V
CB
= 60 V,
I
E
= 0,
T
A
= 125 C
I
CB0
10
10
DC current gain
I
C
= 100
A,
V
CE
= 10 V
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V,
T
A
= 55 C
I
C
= 150 mA,
V
CE
= 10 V
I
C
= 150 mA,
V
CE
= 1 V
I
C
= 500 mA,
V
CE
= 10 V
h
FE
35
50
75
35
100
50
40
300
V
Collector-emitter saturation voltage
1)
I
C
= 150 mA
, I
B
= 15 mA
I
C
= 500 mA
, I
B
= 50 mA
V
CEsat
0.3
1.0
Base-emitter saturation voltage
1)
I
C
= 150 mA
, I
B
= 15 mA
I
C
= 500 mA
, I
B
= 50 mA
V
BEsat
0.6
1.2
2.0
Emitter-base cutoff current
V
EB
= 3 V,
I
C
= 0
I
EB0
10
nA
Collector cutoff current
V
CE
= 30 V,
V
BE
= 0.5 V
I
CEX
10
Base cutoff current
V
CE
= 30 V,
V
BE
= 3 V
I
BL
20
1)
Pulse test conditions:
t
300
s,
D
2 %.
Semiconductor Group
3
SXT 2222 A
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Noise figure
I
C
= 100
A
, V
CE
= 10 V
, R
S
= 1 k
,
f
= 1 kHz
MHz
Transition frequency
I
C
= 50 mA
, V
CE
= 20 V,
f
= 100 MHz
f
T
300
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
8
AC characteristics
Input capacitance
V
EB
= 2 V,
f
= 1 MHz
C
ibo
25
dB
NF
4
k
Input impedance
I
C
= 1 mA
, V
CE
= 10 V,
f
= 1 kHz
I
C
= 10 mA
, V
CE
= 10 V,
f
= 1 kHz
h
ie
2
0.25
8
1.25
Unit
Values
Parameter
Symbol
min.
typ.
max.
10
4
Voltage feedback ratio
I
C
= 1 mA
, V
CE
= 10 V,
f
= 1 kHz
I
C
= 10 mA
, V
CE
= 10 V,
f
= 1 kHz
h
re
8
4
Small-signal current gain
I
C
= 1 mA
, V
CE
= 10 V,
f
= 1 kHz
I
C
= 10 mA
, V
CE
= 10 V,
f
= 1 kHz
h
fe
50
75
300
375
S
Output admittance
I
C
= 1 mA
, V
CE
= 10 V,
f
= 1 kHz
I
C
= 10 mA
, V
CE
= 10 V,
f
= 1 kHz
h
oe
5
25
35
200
ps
Collector-base time constant
I
E
= 20 mA
, V
CB
= 20 V,
f
= 31.8 MHz
r
b
'C
c
150
ns
ns
ns
ns
Switching times
V
CC
= 30 V,
V
BE
= 0.5 V,
I
C
= 150 mA
,
I
B1
= 15 mA
V
CC
= 30 V,
I
C
= 150 mA
,
I
B1
=
I
B2
= 15 mA
t
d
t
r
t
s
t
f
10
25
225
60
Semiconductor Group
4
SXT 2222 A
Test circuits
Delay and rise time
Storage and fall time
Semiconductor Group
5
SXT 2222 A
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Collector-base capacitance
C
cb
=
f
(
V
CB
)
f
= 1 MHz
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 20 V
Semiconductor Group
6
SXT 2222 A
Saturation voltage
I
C
=
f
(
V
BE sat
,
V
CE sat
)
h
FE
= 10
Delay time
t
d
=
f
(
I
C
)
Rise time
t
r
=
f
(
I
C
)
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 10 V
Storage time
t
s
=
f
(
I
C
)
Fall time
t
f
=
f
(
I
C
)
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