1
Semiconductor Group
SPD30N03L
SIPMOS
Power Transistor
Product Summary
Drain source voltage
30
V
DS
V
Drain-Source on-state resistance
0.012
R
DS(on)
I
D
Continuous drain current
30
A
Features
N channel
Enhancement mode
Avalanche rated
Logic Level
d
v/dt rated
175C operating temperature
Pin 1
Pin 2
Pin 3
G
D
S
Packaging
Type
Package
Ordering Code
SPD30N03L
Tape and Reel
P-TO252
Q67040-S4148-A2
SPU30N03L
Tube
Q67040-S4149-A2
P-TO251-3-1
Maximum Ratings, at
Tj = 25 C, unless otherwise specified
Parameter
Symbol
Unit
Value
Continuous drain current
T
C
= 25 C,
limited by bond wire
T
C
= 100 C
30
30
I
D
A
Pulsed drain current
T
C
= 25 C
I
Dpulse
120
Avalanche energy, single pulse
I
D
= 30 A,
V
DD
= 25 V,
R
GS
= 25
mJ
E
AS
250
Avalanche energy, periodic limited by
T
jmax
12
E
AR
Reverse diode d
v/dt
I
S
= 46 A,
V
DS
= 24 V, d
i/dt = 200 A/s,
T
jmax
= 175 C
d
v/dt
6
kV/s
Gate source voltage
V
GS
20
V
Power dissipation
T
C
= 25 C
P
tot
120
W
Operating and storage temperature
T
j ,
T
stg
C
-55... +175
55/175/56
IEC climatic category; DIN IEC 68-1
2
Semiconductor Group
SPD30N03L
Thermal Characteristics
Parameter
Values
Symbol
Unit
typ.
max.
min.
Characteristics
R
thJC
-
-
1.25
K/W
Thermal resistance, junction - case
-
Thermal resistance, junction - ambient, leded
R
thJA
-
100
-
-
-
-
75
50
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
Electrical Characteristics, at
Tj = 25 C, unless otherwise specified
Parameter
Symbol
Unit
Values
min.
max.
typ.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
-
V
(BR)DSS
30
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 80 A
V
GS(th)
2
1.6
1.2
Zero gate voltage drain current
V
DS
= 30 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 30 V,
V
GS
= 0 V,
T
j
= 150 C
-
I
DSS
A
1
100
0.1
-
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
nA
100
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 30 A
V
GS
= 10 V,
I
D
= 30 A
R
DS(on)
-
-
0.013
0.0076
0.018
0.012
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain
connection. PCB is vertical without blown air.
3
Semiconductor Group
SPD30N03L
Electrical Characteristics, at
Tj = 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
= 30 A
g
fs
20
45
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
iss
-
1640
2100
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
oss
-
650
820
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
C
rss
-
280
350
Turn-on delay time
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 30 A,
R
G
= 3.6
t
d(on)
-
16
24
ns
Rise time
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 30 A,
R
G
= 3.6
t
r
-
30
45
Turn-off delay time
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 30 A,
R
G
= 3.6
t
d(off)
-
20
30
Fall time
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 30 A,
R
G
= 3.6
t
f
-
25
38
4
Semiconductor Group
SPD30N03L
Electrical Characteristics, at
Tj = 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Gate to source charge
V
DD
= 24 V,
I
D
= 30 A
6
nC
4
Q
gs
-
-
21
Q
gd
Gate to drain charge
V
DD
= 24 V,
I
D
= 30 A
31.5
Gate charge total
V
DD
= 24 V,
I
D
= 30 A,
V
GS
= 0 to 10 V
-
54
80
Q
g
Gate plateau voltage
V
DD
= 24 V,
I
D
= 30 A
V
(plateau)
3.31
-
V
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 C
I
S
-
-
30
A
Inverse diode direct current,pulsed
T
C
= 25 C
I
SM
-
-
120
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 60 A
V
SD
-
0.97
V
1.7
Reverse recovery time
V
R
= 15 V,
I
F
=
I
S
, d
i
F
/d
t = 100 A/s
t
rr
-
45
ns
68
Reverse recovery charge
V
R
= 15 V,
I
F=
l
S
, d
i
F
/d
t = 100 A/s
Q
rr
-
C
0.045
0.068
5
Semiconductor Group
SPD30N03L
Power Dissipation
P
tot
=
f (T
C
)
0
20
40
60
80
100 120 140 160 C 190
T
C
0
10
20
30
40
50
60
70
80
90
100
110
W
130
SPD30N03L
P
tot
Drain current
I
D
=
f (T
C
)
parameter:
V
GS
10 V
0
20
40
60
80
100 120 140 160 C 190
T
C
0
4
8
12
16
20
24
A
32
SPD30N03L
I
D
Transient thermal impedance
Z
thJC
=
f (t
p
)
parameter :
D = t
p
/
T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPD30N03L
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
I
D
=
f (V
DS
)
parameter :
D = 0 , T
C
= 25 C
10
-1
10
0
10
1
10
2
V
V
DS
0
10
1
10
2
10
3
10
A
SPD30N03L
I
D
R
D
S
(o
n)
=
V
D
S
/
I
D
DC
10 ms
1 ms
100 s
t
p
= 65.0s
6
Semiconductor Group
SPD30N03L
Typ. output characteristics
I
D
=
f (V
DS
)
parameter:
t
p
= 80 s
0.0
0.5 1.0
1.5 2.0
2.5 3.0
3.5 4.0
V
5.0
V
DS
0
5
10
15
20
25
30
35
40
45
50
55
60
A
75
SPD30N03L
I
D
V
GS
[V]
a
a
2.5
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
5.5
h
h
6.0
i
i
6.5
j
j
7.0
k
k
8.0
l
P
tot
= 120W
l
10.0
Typ. drain-source-on-resistance
R
DS(on)
=
f (I
D
)
parameter:
V
GS
0
10
20
30
40
A
60
I
D
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0.060
SPD30N03L
R
DS(on)
V
GS
[V] =
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
5.5
h
h
6.0
i
i
6.5
j
j
7.0
k
k
8.0
l
l
10.0
Typ. transfer characteristics
I
D
=
f (V
GS
)
parameter:
t
p
= 80 s
V
DS
2 x
I
D
x
R
DS(on)max
0
1
2
3
V
5
V
GS
0
20
40
60
A
100
I
D
Typ. forward transconductance
g
fs
= f(I
D
)
; T
j
= 25C
parameter:
g
fs
0
10
20
30
40
50
A
70
I
D
0
5
10
15
20
25
30
35
40
45
50
S
60
g
fs
7
Semiconductor Group
SPD30N03L
Drain-source on-resistance
R
DS(on)
=
f (T
j
)
parameter :
I
D
= 30 A,
V
GS
= 4.5 V
-60
-20
20
60
100
140
C
200
T
j
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.050
SPD30N03L
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th)
=
f (T
j
)
parameter :
V
GS
=
V
DS
,
I
D
= 80 A
-60
-20
20
60
100
140
C
200
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
min
typ
max
Typ. capacitances
C = f (V
DS
)
parameter:
V
GS
= 0 V,
f = 1 MHz
0
5
10
15
20
25
30
V
40
V
DS
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F
=
f (V
SD
)
parameter:
T
j
, t
p
= 80 s
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
0
10
1
10
2
10
3
10
A
SPD30N03L
I
F
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 175 C typ
T
j
= 175 C (98%)
8
Semiconductor Group
SPD30N03L
Typ. gate charge
V
GS
=
f (Q
Gate
)
parameter:
I
D puls
= 30 A
0
10
20
30
40
50
60
nC
80
Q
Gate
0
2
4
6
8
10
12
V
16
SPD30N03L
V
GS
DS max
V
0,8
DS max
V
0,2
Avalanche Energy
E
AS
=
f (T
j
)
parameter:
I
D
= 30 A,
V
DD
= 25 V
R
GS
= 25
20
40
60
80
100
120
140
C
180
T
j
0
50
100
150
mJ
250
E
AS
Drain-source breakdown voltage
V
(BR)DSS
=
f (T
j
)
-60
-20
20
60
100
140
C
200
T
j
27
28
29
30
31
32
33
34
35
V
37
SPD30N03L
V
(BR)DSS
9
Semiconductor Group
SPD30N03L
Edition 03 / 1999
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstrae 73,
81541 Mnchen
Siemens AG 1997
All Rights Reserved.
Attention please!
As far as patents or other rights of third parties are concerned, liability is only assumed for components,
not for applications, processes and circuits implemented within components or assemblies.
The information describes a type of component and shall not be considered as warranted characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany
or the Siemens Companies and Representatives worldwide (see address list).
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Siemens Office, Semiconductor Group.
Siemens AG is an approved CECC manufacturer.
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Critical components
1
of the Semiconductor Group of Siemens AG, may only be used in life-support devices or
systems
2
with the express written approval of the Semiconductor Group of Siemens AG.
1)A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of
that device or system.
2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
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