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Электронный компонент: SRD00111Z

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Semiconductor Group
1
02.95
Silicon PIN Photodiode in TO-Package
SRD 00111Z
Si-PIN-photodiode
Designed for application in fiber-optic
Transmission systems
Sensitive receiver for the 1
st
window (850 nm)
Suitable for bit rates up to 565 Mbit/s
Low junction and low package capacitance
Fast switching times
Low dark current
Low noise
Hermetically sealed 3-pin metal case
Cathode electrically isolated from case
Type
Ordering Code
Connector/Flange
SRD 00111Z
Q62702-P3019
TO, without optics
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
50
V
Isolation voltage to case
V
R
100
V
Junction temperature
T
j
125
C
Storage temperature
T
stg
-
55
...
125
C
Soldering time (wave / dip soldering),
distance between solder point and base plate
2 mm, 260 C
t
s
10
s
SRD 00111Z
Semiconductor Group
2
Characteristics
All data refer to an ambient temperature of 25 C.
Parameter
Symbol
Values
Unit
Photosensitive area
A
1
mm
2
Wavelength of max. sensitivity
Smax
850
nm
Quantumn efficiency at
= 850 nm
0.8
Spectral sensitivity
= 850 nm
= 950 nm
S
850
S
950
0.55 (
0.45)
0.45
A/W
A/W
Rise and fall time
R
L
= 50
,
V
R
= 50 V,
= 850 nm
t
r
;
t
f
1
ns
Junction capacitance at
f
= 1 MHz
V
R
= 0 V
V
R
= 1 V
V
R
= 12 V
V
R
= 20 V
C
0
C
1
C
12
C
20
13
7
3.3
3
pF
pF
pF
pF
3 dB bandwidth
R
L
= 50
,
V
R
= 50 V,
= 850 nm
f
c
500
MHz
Dark current
V
R
= 20 V,
E
= 0
I
D
1 (
5)
nA
Noise equivalent power
V
R
= 20 V,
= 850 nm
NEP
3.3
10
-
14
W/
Hz
Detectivity
V
R
= 20 V,
= 850 nm
D
*
3.1
10
12
cm
Hz/W
Temperature coefficient
I
p
TC
0.2
%/K
Isolation current,
V
IS
= 100 V
I
IS
0.1 (
1)
nA
SRD 00111Z
Semiconductor Group
3
Relative Spectral Sensitivity
S
=
S
(

)
Photocurrent
I
p
=
I
p
(
E
)
0
10
20
30
40
50
60
70
80
90
100
400
600
800
1000
L/[nm]
Srel/[%]
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
E/[mW/cm2]
Ip/[uA]
Dark Current
I
R
=
I
R
(
V
R
)
Dark Current
I
R
=
I
R
(
T
A
)
E
= 0,
V
R
= 20 V
0.001
0.01
0.1
1
10
100
0
10
20
30
40
50
Vr/[V]
Ir/[nA]
0.001
0.01
0.1
1
10
100
1000
-50 -25
0
25
50
75
100
Ta/[C]
Ir/[nA]
SRD 00111Z
Semiconductor Group
4
Dark Current
I
R
=
I
R
(
V
R
)
Junction Capacity
C
=
C
(
V
R
)
E
= 0,
f
= 1 MHz
0.001
0.01
0.1
1
10
100
1000
10000
100000
0
10
20
30
Vr/[V]
Ir/[nA]
-10C
0C
25C
50C
75C
100C
125C
0
2
4
6
8
10
12
0.1
1
10
100
Vr/[V]
C/[pF]
Dark Current
I
R
=
I
R
(
V
R
)
0
20
40
60
80
100
120
0
20
40
60
Vr/[V]
Rs/[Ohm]
SRD 00111Z
Semiconductor Group
5
Package Outlines (Dimensions in mm)
SRD 00111Z