Semiconductor Group
1
02.95
1550 nm Laser in Coaxial Package with SM-Pigtail,
Medium Power
STM 81004X
STM 81005X
Designed for application in fiber-optic networks
Laser diode with Multi-Quantum Well structure
Suitable for bit rates up to 1 Gbit/s
Ternary photodiode at rear mirror for monitoring and
control of radiant power
Hermetically sealed subcomponent, similar to TO 18
SM Pigtail with optional flange
Type
Ordering Code
Connector/Flange
STM 81004G
Q62702-Pxxxx
FC / without flange
STM 81004A
Q62702-Pxxxx
DIN / without flange
STM 81005G
Q62702-Pxxxx
FC / with flange
STM 81005A
Q62702-Pxxxx
DIN / with flange
Component with other connector types on request.
Maximum Ratings
Output power ratings refer to the SM fiber output. The operating temperature of the
submount is identical to the case temperature.
Parameter
Symbol
Values
Unit
Module
Operating temperature range at case
T
C
-
40
...
+ 85
C
Storage temperature range
T
stg
-
40
...
+ 85
C
Soldering temperature
t
max
= 10 s, 2 mm distance from bottom edge of
case
T
S
260
C
STM 81004X
STM 81005X
Semiconductor Group
2
Maximum Ratings (cont'd)
Parameter
Symbol
Values
Unit
Laser Diode
Direct forward current
I
F max
120
mA
Radiant power CW
e
2
mW
Reverse voltage
V
R max
2
V
Monitor Diode
Reverse voltage
V
R max
10
V
Characteristics
All optical data refer to a coupled 10/125
m SM fiber,
T
C
= 25 C.
Parameter
Symbol
Values
Unit
Laser Diode
Optical output power
e
> 1.2
mW
Emission wavelength center of range
e
= 0.5 mW
1510
...
1590
nm
Spectral bandwidth
e
= 0.5 mW (RMS)
< 5
nm
Threshold current (
-
40
...
+ 85 C)
I
th
8
...
60
mA
Forward voltage
e
= 0.5 mW
V
F
< 1.5
V
Radiant power at threshold
eth
< 40
W
Slope efficiency
20
...
100
mW/A
Differential series resistance
r
S
< 8
Rise time/fall time
t
R
,
t
F
< 1
ns
Monitor Diode
Dark Current,
V
R
= 5 V,
e
= 0
I
R
< 500
nA
Photocurrent,
e
= 0.5 mW
I
P
100
...
1000
A
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