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Электронный компонент: TLE4260S

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P-TO220-5-1
P-TO220-5-2
5-V Low-Drop Voltage Regulator
TLE 4260
Semiconductor Group
1
1998-11-01
Features
Low-drop voltage
Very low quiescent current
Low starting current consumption
Integrated temperature protection
Protection against reverse polarity
Input voltage up to 42 V
Overvoltage protection up to 65 V (
400 ms)
Short-circuit proof
Suited for automotive electronics
Wide temperature range
EMC proofed (100 V/m)
Type
Ordering Code
Package
w
TLE 4260
Q67000-A8187
P-TO220-5-1
w
TLE 4260 S
Q67000-A9044
P-TO220-5-2
w
Please also refer to the new pin compatible device TLE 4270
Functional Description
TLE 4260; S is a 5-V low-drop fixed-voltage regulator in a P-TO220-5-H/S package. The
maximum input voltage is 42 V (65 V/
400 ms). The device can produce an output
current of more than 500 mA. It is shortcircuit-proof and incorporates temperature
protection that disables the circuit at unpermissibly high temperatures.
Due to the wide temperature range of 40 to 150
C, the TLE 4260; S is also suitable
for use in automotive applications.
The IC regulates an input voltage
V
I
in the range 6 <
V
I
< 35 V to
V
Qnominal
= 5.0 V. A reset
signal is generated for an output voltage of
V
Q
< 4.75 V.
The reset delay can be set
externally with a capacitor. If the output current is reduced below 10 mA, the regulator
switches internally to standby and the reset generator is turned off. The standby current
drops to max. 700
A.
TLE 4260
Semiconductor Group
2
1998-11-01
Pin Configuration
(top view)
Pin Definitions and Functions (TLE 4260 and TLE 4260 S)
Pin No.
Symbol
Function
1
V
I
Input; block directly to ground at the IC by a 470-nF capacitor
2
QVRES
Reset output; open collector output controlled by the reset
delay
3
GND
Ground
4
DRES
Reset delay; wired to ground with a capacitor
5
V
Q
5-V output voltage; block to ground with a 22-
F capacitor
AEP00577
1
2
3
4
5
V
QVRES
GND
DRES
V
Q
TLE 4260
TLE 4260 S
TLE 4260
Semiconductor Group
3
1998-11-01
Circuit Description
The control amplifier compares a reference voltage, which is kept highly accurate by
resistance adjustment, to a voltage that is proportional to the output voltage and drives
the base of the series transistor via a buffer. Saturation control as a function of the load
current prevents any over-saturation of the power element. If the output voltage goes
below 96% of its typical value, an external capacitor is discharged on pin 4 by the reset
generator. If the voltage on the capacitor reaches the lower threshold
V
ST
, a reset signal
is issued on pin 2 and not cancelled again until the upper threshold
V
DT
is exceeded. For
an output current of less than
I
QN Off
= 10 mA the standby changeover turns off the reset
generator. The latter is turned on again when the output current increases, the output
voltage drops below 4.2 V or the delay capacitor is discharged by external measures.
The IC also incorporates a number of internal circuits for protection against:
Overload
Overvoltage
Overtemperature
Reverse polarity
Block Diagram
Overvoltage
Monitoring
Saturation
Control and
Protection
RESET
Generator
Temperature
Sensor
Adjustment
BANDGAP
Reference
-
+
7
4
2
3
1
Input
GND
Output
RESET
Delay
RESET
AEB00578
Circuit
STANDBY
Changeover
Amplifier
Control
Buffer
TLE 4260
Semiconductor Group
4
1998-11-01
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
Remarks
min.
max.
Input (Pin 1)
Input voltage
V
I
42
42
V
V
I
65
V
t
400 ms
Input current
I
I
1.6
A
Reset Output (Pin 2)
Voltage
V
R
0.3
42
V
Current
I
R
internally limited
Ground (Pin 3)
Current
I
GND
0.5
A
Reset Delay (Pin 4)
Voltage
V
D
0.3
42
V
Current
I
D
internally limited
Output (Pin 5)
Differential voltage
V
I
V
Q
5.25
V
I
V
Current
I
Q
1.4
A
Temperature
Junction temperature
T
j
32
C
Storage temperature
T
stg
50
150
C
TLE 4260
Semiconductor Group
5
1998-11-01
Operating Range
Parameter
Symbol
Limit Values
Unit
Remarks
min.
max.
Input voltage
V
I
32
V
1)
Junction temperature
T
j
40
165
C
Thermal Resistances
Junction ambient
R
thja
65
K/W
Junction case
R
thjc
3
K/W
1)
See diagram "Output Current versus Input Voltage"
TLE 4260
Semiconductor Group
6
1998-11-01
Characteristics
V
I
= 13.5 V;
T
j
= 25
C; (unless otherwise specified)
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Normal Operation
Output voltage
V
Q
4.75
5.0
5.25
V
25 mA
I
Q
500 mA
6 V
V
I
28 V
40
C
T
j
125
C
Short -circuit current
I
SC
500
1000
mA
V
I
=17 V to 28 V;
V
Q
= 0 V
Current consumption
I
q
=
I
I
I
Q
I
q
8.5
10
mA
1)
6 V
V
I
28 V
I
Q
= 150 mA
Current consumption
I
q
=
I
I
I
Q
I
q
50
65
mA
1)
6 V
V
I
28 V
I
Q
= 500 mA
Current consumption
I
q
=
I
I
I
Q
I
q
80
mA
1)
V
I
6 V
I
Q
= 500 mA
Drop voltage
V
DR
0.35
0.5
V
V
I
= 4.5 V;
I
Q
= 0.5 A
Drop voltage
V
DR
0.2
0.3
V
V
I
= 4.5 V;
I
Q
= 0.15 A
Load regulation
V
Q
15
35
mV
25 mA
I
Q
500 mA
Supply-voltage regulation
V
Q
15
50
mV
V
I
6 V to 28 V;
I
Q
= 100 mA
Supply-voltage regulation
V
Q
5
25
mV
V
I
6 V to 16 V;
I
Q
= 100 mA
Ripple rejection
SVR
54
dB
f
= 100 Hz;
V
r
= 0.5 V
pp
Temperature drift of
output voltage
1)
VQ
2
10
4
1/
C
Standby Operation
Quiscent current;
I
q
=
I
I
I
Q
I
q
500
700
A
10 V
V
I
16 V;
I
Q
= 0 mA
Quiscent current;
I
q
=
I
I
I
Q
I
q
750
850
A
10 V
V
I
16 V;
I
Q
= 5 mA
TLE 4260
Semiconductor Group
7
1998-11-01
Standby Off/Normal On
Current consumption
I
qSOFF
1.0
1.2
mA
see test diagram
Current consumption
I
qNON
1.7
2.2
mA
see test diagram
Normal Off/Standby On
Current consumption
I
qNOFF
1.55
2.00
mA
see test diagram
Current consumption
I
qSON
850
1050
A
see test diagram
Switching threshold
I
QNOFF
7.5
10
12.5
mA
see test diagram
Switching hysteresis
I
Q
2.25
3
4
mA
see test diagram
Reset Generator
Switching threshold
V
RT
94
96
97
%
in % of
V
Q
;
I
Q
> 500 mA;
V
I
= 6 V
Saturation voltage
V
R
0.25
0.40
V
I
R
= 3 mA;
V
I
= 4.5 V
Reverse current
I
R
1
A
V
R
= 5 V
Charge current
I
D
7
10
13
A
Switching threshold
V
ST
0.9
1.1
1.3
V
Delay switching threshold
V
DT
2.15
2.50
2.75
V
Delay time
t
D
25
ms
C
D
= 100 nF
Delay time
t
t
5
s
C
D
= 100 nF
General Data
Turn-Off voltage
V
IOFF
40
43
45
V
I
Q
< 1 mA
Turn-Off hysteresis
V
I
3.0
V
Leakage current
I
QS
500
A
V
Q
=
0 V;
V
I
=
45 V
Reverse output current
I
QR
1.5
mA
V
Q
=
5 V;
V
I
=
open
1)
See diagram
Characteristics (cont'd)
V
I
= 13.5 V;
T
j
= 25
C; (unless otherwise specified)
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
TLE 4260
Semiconductor Group
8
1998-11-01
Application Circuit
Test Circuit
AES00579
TLE 4260
22 F
1
5
Input
6V to 40V
Output
RESET
4
2
3
470 nF
100 nF
100 k
AES01509
TLE 4260-2
1000 F
V
+
V
R
R
V
Q
V
d
GND
Q
SC
QS
C
d
100 nF
V
C
/
/
QR
R
22 F
1.8 k
1
5
2
4
3
Q
V
+
V
V
Dr
=
SVR
V
R
V
Q
470 nF
= 20 log
TLE 4260
Semiconductor Group
9
1998-11-01
Time Responce
TLE 4260
Semiconductor Group
10
1998-11-01
Time Responce in Standby Condition
TLE 4260
Semiconductor Group
11
1998-11-01
Standby/Normal Changeover
Drop Voltage versus Output Current
Output Voltage versus Temperature
Current Consumption versus
Output Current
AED00583
0
7
mA
mA
Q
8
9
10 11 12 13 14
16
0.5
1.0
1.5
2.0
2.5
N ON
OFF
N
ON
S
S
OFF
OFF
QN
QN
ON
Q
AED00584
0
0
100
200
300
600
mA
400
800
Q
400
100
300
500
600
700
200
D
Dr
V
= 4.5 V
= 25 C
mV
T
j
AED00028
4.60
-40
V
Q
0
40
80
160
4.70
4.80
4.90
5.00
5.10
5.20
V
V
=
120 C
j
13.5 V
AED00585
0
0
100
200
300
600
mA
40
80
mA
= 13.5 V
V
Q
400
10
30
50
60
70
20
TLE 4260
Semiconductor Group
12
1998-11-01
Current Consumption versus
Input Voltage
Output Current versus Input Voltage
Output Voltage versus Input Voltage
AED00590
0
0
V
10
20
30
50
V
20
40
60
80
100
120
mA
R
L
= 10
40
AED00587
0
0
V
Q
10
20
30
50
V
A
40
1.2
1.0
0.8
0.6
0.4
0.2
C
= 25
T
j
AED00591
0
0
V
V
Q
2
4
6
10
V
2
4
6
8
10
12
V
R
L
= 10
8
TLE 4260
Semiconductor Group
13
1998-11-01
Package Outlines

10
+0.4
3.75
+0.1
1
5
1.7
0.8
8.4
0.4
0.4
4.5
0.4
+0.1
10.2
15.4
0.3
8.8
-0.2
16
1.27
+0.1
-0.2
10.2
+0.1
2.8
4.6
-0.2
2.6
8.6
0.3
0.3
0.4
19.5 max
1x45
1)
1) 1 at dam bar (max 1.8 from body)
1) 1 im Dichtstegbereich (max 1.8 vom Krper)
-0.15
-0.15
M
0.6
5x
P-TO220-5-1
(Plastic Transistor Single Outline)
G
P
T
0
5
107
Weigth approx. 2.1 g
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book "Package Information".
Dimensions in mm
TLE 4260
Semiconductor Group
14
1998-11-01

10
+0.4
3.75
+0.1
1
5
1.7
0.8
0.15
0.4
+0.1
15.4
0.3
8.8
-0.2
1.27
+0.1
-0.2
10.2
+0.1
2.8
4.6
-0.2
2.6
10.9
0.2
0.2
12.9
1x45
1)
1) 1 at dam bar (max 1.8 from body)
1) 1 im Dichtstegbereich (max 1.8 vom Krper)
-0.15
-0.15
M
0.6
5x
P-TO220-5-1
(Plastic Transistor Single Outline)
G
P
T
0
5
256
Weigth approx. 2.1 g
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book "Package Information".
Dimensions in mm