Semiconductor Group
1
1998-02-01
Description
TLE 5204 is an integrated power bridge with DMOS output stages for driving DC motors.
This motor bridge is optimized for driving DC motors in reversible operation. The internal
protective circuitry in particular ensures that no crossover currents can occur.
Because the free-wheeling diodes are integrated, the external circuitry that is necessary
is reduced to the capacitors on the supply voltage.
The control inputs have TTL/CMOS-compatible levels.
1)
SIEMENS Power Technology
3-A DC Motor Driver
Overview
SPT IC
1)
TLE 5204
P-TO220-7-1
P-TO220-7-8
Type
Ordering Code
Package
TLE 5204
Q67000-A9177
P-TO220-7-1
TLE 5204 G
Q67006-A9234
P-TO220-7-8
Features
Output current
3 A
I
/O error diagnostics
Short-circuit proof
Four-quadrant operation
Integrated free-wheeling diodes
Wide temperature range
Break low and break high, if open load detection is
required, the device TLE 5203 will fit
TLE 5204
Semiconductor Group
2
1998-02-01
Figure 1
Pin Configuration (top view)
Pin Definitions and Functions
Pin No.
Symbol
Function
1
Q1
Output of channel 1; Short-circuit proof, free-wheeling
diodes integrated for inductive loads
2
EF
Error flag; TTL/CMOS-compatible output for error detection
(open drain)
3
I
1
Control input 1; TTL/CMOS-compatible
4
GND
Ground; connected internally to cooling fin
5
I
2
Control input 2; TTL/CMOS-compatible
6
V
S
Supply voltage; wire with capacitor matching load
7
Q2
Output of channel 2; Short-circuit proof, free-wheeling
diodes integrated for inductive loads
AEP01224
Q1
EF
1
GND
2
Q2
V
S
4
3
2
1
5
6
7
TLE 5204
TLE 5204 G
Semiconductor Group
3
1998-02-01
TLE 5204
Circuit Description
Input Circuit
The control inputs consist of TTL/CMOS-compatible Schmitt triggers with hysteresis.
Buffer amplifiers are driven by these stages and convert the logic signal into the
necessary form for driving the power output stages.
Output Stages
The output stages form a switched H-bridge. Protective circuits make the outputs short-
circuit proof to ground and to the supply voltage throughout the operating range. Positive
and negative voltage spikes, which occur when switching inductive loads, are clamped
by integrated power diodes.
Functional Truth Table
E1
E2
Q1
Q2
Comments
L
L
L
L
Motor brake; both low side transistors turned-ON
L
H
L
H
Motor turns clockwise
H
L
H
L
Motor turns counterclockwise
H
H
H
H
Motor brake; both high side transistors turned-ON
Notes for Output Stage
Symbol
Value
L
Low side transistor is turned-ON
High side transistor is turned-OFF
H
High side transistor is turned-ON
Low side transistor is turned-OFF
TLE 5204
Semiconductor Group
4
1998-02-01
Monitoring Functions
An internal circuit ensures that all output transistors are turned-OFF if the supply voltage
is below the operating range.
A monitoring circuit for each output transistor detects whether the particular transistor is
active and in this case prevents the corresponding source transistor (sink transistor) from
conducting in sink operation (source operation). Therefore no crossover currents can
occur. Pulse-width operation is possible up to a maximum switching frequency of 1 kHz
for any load.
Depending on the load current higher frequencies are possible.
Protective Function
Various errors like short-circuit to +
V
S
, ground or across the load are detected. All faults
result in turn-OFF of the output stages after a delay of 40
s and setting of the error flag
EF to ground. Changing the inputs resets the error flag.
Output Shorted to Ground Detection
If a high side transistor is switched on and its output is shorted to ground, the output
current is limited to typ 8 A. After a delay of 40
s all outputs will be switched off and the
error flag EF is set to ground.
Output Shorted to +
V
S
and Overload Detection
An internal circuit detects if the current through the low side transistor is higher than 4 A
typ. In this case all outputs are turned-OFF after 40
s and the error flag is set to ground.
At a junction temperature higher than 160
C the thermal shutdown turns-OFF, all four
output stages commonly and the error flag is set without a delay.
Diagnosis
Input
Output
Diagnosis
EF
E1
E2
Q1
Q2
Shorted
to GND
Shorted
to
V
S
Overload
L
L
L
L
Q1, Q2
L
L
H
L
H
Q2
Q1
X
L
H
L
H
L
Q1
Q2
X
L
H
H
H
H
Q1, Q2
L
Semiconductor Group
5
1998-02-01
TLE 5204
Figure 2
Block Diagram
AEB01225
S
V
Protection
Circuit 1
Circuit 1
Protection
Flag
Error
Error Flag
2
6
GND
4
3
5
1
7
Output 2
Output 1
Control Input 2
Control Input 1
TLE 5204
Semiconductor Group
6
1998-02-01
1)
During overload condition currents higher than 4 A can dynamically occur, before the device shuts off, without
any damaging the device.
2)
Depending on load higher frequencies are possible.
Absolute Maximum Ratings
T
j
= 40 to 150
C
Parameter
Symbol
Limit Values
Unit
Remarks
min.
max.
Voltage
Supply voltage
Supply voltage
Logic input voltage
Diagnostics output voltage
V
S
V
S
V
I1 , 2
V
EF
0.3
1
0.3
0.3
40
7
7
V
V
V
V
t
< 500 ms;
I
S
< 5 A
V
S
= 0 40 V
Current
Free-wheeling current
Output current
1)
I
F
I
Q
4
4
4
4
A
A
T
j
150
C
Junction temperature
Storage temperature
T
j
T
stg
40
50
150
150
C
C
Thermal Resistance
Junction-case
Junction-ambient
R
th jC
R
th jA
4
65
K/W
K/W
Operating Range
Supply voltage
Logic input voltage
Switching frequency
2)
Junction temperature
V
S
V
I1 , 2
f
T
j
6
0.3
40
24
7
1
150
V
V
kHz
C
Semiconductor Group
7
1998-02-01
TLE 5204
Electrical Characteristics
V
S
= 6 to 18 V;
T
j
= 40 to 150
C
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
General
Quiescent current
Turn-ON delay
Turn-OFF delay
Turn-ON time
Turn-OFF time
Undervoltage
Undervoltage
I
q
t
d1
t
d2
t
r
t
f
V
S
V
S
10
10
5.5
4.5
10
20
10
20
10
5.9
5.2
mA
s
s
s
s
V
V
I
L
= 0 A
Input to output
Input to output
I
Q
= 2.5 A;
cf diagram
I
Q
= 2.5 A;
cf diagram
I
C ON
I
C OFF
Logic
Control inputs
H-input voltage
L-input voltage
V
IH
V
IL
2.8
1.2
V
V
Hysteresis of
input voltage
V
I
0.4
0.8
1.2
V
H-input current
L-input current
I
I
I
I
2
10
4
2
0
A
A
V
I
=
V
IH
V
I
=
V
IL
Diagnosis output
Delay time
L-output voltage
Leakage current
t
d
V
EF
I
RD
20
40
60
0.4
10
s
V
A
I
= 3 mA
Error detection
Switching threshold U
Switching threshold L
Overcurrent 1
V
EH
V
EL
I
F1
2
2
3
2.7
2.7
4
3.5
3.5
5
V
V
A
Error low
Error high
Error low
TLE 5204
Semiconductor Group
8
1998-02-01
1)
Values for RDSON are for
t
>
100
s after applying +
V
S
.
Outputs
RDSONU
RDSONU
RDSONL
RDSONL
Diode forward voltage
Diode forward voltage
V
FU
V
FL
0.4
0.65
0.4
0.65
1.5
1.5
V
V
V
S
> 6 V;
T
j
= 25
C
1)
V
S
> 6 V;
T
j
= 150
C
1)
V
S
> 6 V;
T
j
= 25
C
1)
V
S
> 6 V;
T
j
= 150
C
1)
I
F
= 3 A
I
F
= 3 A
Electrical Characteristics (cont'd)
V
S
= 6 to 18 V;
T
j
= 40 to 150
C
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
Semiconductor Group
9
1998-02-01
TLE 5204
Figure 3
Test Circuit
Figure 4
Timing Diagram
AES01522
470 nF
5
3
TLE 5204
63 V
6
2
1
7
4
4700 F
q
Q1
R
L
V
2
1
2
M
Q2
V
Q2
1
V
V
S
Q1
V
V
EF
S
,
TLE 5204
Semiconductor Group
10
1998-02-01
Figure 5
Application Circuit
AES01523
M
4
7
1
6
TLE 5204
5 V
2 k
Control
Inputs
5
3
2
Flag
Error
220 nF
+
*)
= 12 V
S
V
*) Necessary for isolating supply voltage or interruption (e.g. 470
F).
Semiconductor Group
11
1998-02-01
TLE 5204
Diagrams
R
ON
Resistance of Output Stage
over Temperature
Forward Current of Upper
Free-Wheeling Diode versus Voltage
Output Voltage on Diagnostics Output
versus Current
Forward Current of Lower
Free-Wheeling Diode versus Voltage
AED01305
0
0
200
400
m
800
C
<18 V
R
ON
V
S
25
50
75
100
150
6 V<
600
max
typ
T
j
AED01303
0.2
0
1
2
3
4
= 25 C
= 150 C
A
F
V
F
0.6
1
1.4
V
T
j
T
j
AED01306
0
0
= 25 C
= 150 C
V
EF
V
S
1
2
3
4
mA
6
50
100
150
200
250
300
=12 V
mV
T
j
T
j
AED01304
0.2
0
1
2
3
4
= 25 C
= 150 C
A
F
V
F
0.6
1
1.4
V
T
j
T
j
Semiconductor Group
12
1998-02-01
TLE 5204
Overcurrent Threshold
versus Temperature
Input Threshold
versus Temperature
Quiescent Current
versus Temperature
Switching Threshold
V
EL, EH
versus Temperature
AED01681
-40
0
Q
A
0
40
80
120 C 160
2
4
6
8
10
typ
min
T
j
AED01683
-40
1.0
V
V
0
40
80
120 C 160
2.0
2.5
3.0
3.5
typ
1.5
V
H
L
V
typ
T
j
AED01682
-40
0
S
mA
0
40
80
120 C 160
1
2
3
4
5
typ
T
j
AED01684
-40
V
F
V
0
40
80
120 C 160
3.5
4.0
4.5
5.0
typ
3.0
5.5
T
j
Semiconductor Group
13
1998-02-01
TLE 5204
Figure 6
Timing Diagram for Output Shorted to Ground
Figure 7
Timing Diagram for Output Shorted to
V
S
AED01685
E2
Q2
Q2
V
EF
8 A
R
Short
8 A
x
E1 = Low
s
40
V
FL
AED01686
E2
Q1
Q1
V
EF
20 A
R
Short
20 A
x
E1 = Low
V
S
s
40
FU
V
TLE 5204
Semiconductor Group
14
1998-02-01
Figure 8
Timing Diagram for Overcurrent
AED01687
E2
Load
EF
Overcurrent
E1 = Low
Switching
Threshold
V
Q1
x
ON
R
Load
V
F
Q2
V
F
V
Load
R
ON
x
V
S
S
V
s
40
F1
Semiconductor Group
15
1998-02-01
TLE 5204
Package Outlines
10
+0.4
3.75
+0.1
1
7
1.27
0.6
8.4
0.4
0.4
4.5
0.4
+0.1
10.2
15.4
0.3
8.8
-0.2
16
1.27
+0.1
+0.1
2.8
4.6
-0.2
2.6
8.6
0.3
0.3
0.4
19.5 max
1 x 45
at dam bar (max 1.8 from body)
im Dichtstegbereich (max 1.8 vom Krper)
-0.15
-0.15
M
0.6
7x
-0.2
10.2
1)
1) 0.75
1) 0.75
GPT05108
P-TO220-7-1
(Plastic Transistor Single Outline)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book "Package Information".
Dimensions in mm
SMD = Surface Mounted Device
GPT05874
10.2
8.0
10.1
0.6
6 x 1.27 = 7.62
3.5
0.4
8.8
1.5
0.2
1.27
2.6
4.6
1.27
1)
1) shear and punch direction burr free surface
P-TO220-7-8 (SMD)
(Plastic Transistor Single Outline)
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