Document Outline
- S-808xxC Series
- Cover
- Features
- Applications
- Packages
- Block Diagrams
- Pin Configuration
- Selection Guide
- Output Forms
- Absolute Maximum Ratings
- Electrical Characteristics
- Test Circuits
- Timing chart
- Definition of Terms
- Standard Circuit
- Operation Description
- Electrical Characteristics for customized products
- Typical Characteristics
- Application Circuit Examples
- Precautions
- Package drawings
- SOT-89-3
- TO-92
- SC-82AB
- 4-Pin SNB(B)
- SOT-23-5
Rev.2.0
_31
Seiko Instruments Inc.
1
S-808xxC Series
HIGH-PRECISION SMALL-PACKAGE
VOLTAGE DETECTOR
The S-808xxC series is a series of high-precision voltage detectors
developed using CMOS process. The detection voltage is fixed
internally with an accuracy of
2.0%. Two output forms, Nch
open-drain and CMOS output, are available. Ultra-low current
consumption and miniature package lineup can meet demand from
the portable device applications.
I
I
I
I Features
Ultra-low current consumption
1.3
A Typ. (at V
DD
=1.5 V) (Products with detection voltage of 1.4 V Typ. or less)
0.8
A Typ. (at V
DD
=3.5 V) (Products with detection voltage of 1.5 V Typ. or more)
High-accuracy detection voltage 2.0 %
Operating voltage range
0.65 V to 5.0 V (Products with detection voltage of 1.4 V Typ. or less)
0.95 V to 10.0 V (Products with detection voltage of 1.5 V Typ. or more)
Hysteresis characteristics
5
% typ.
Detection voltage
0.8 V to 6.0 V (0.1 V step)
Output form
Active low CMOS output or active low Nch open-drain
I
I
I
I Applications
Power monitor for portable equipment such as note book computers, digital cameras, PDA, and cellular
phones.
Constant voltage power monitor for cameras, video equipment and communication devices.
Power monitor for microcomputers and reset for CPUs.
Battery checker
Detection of power failure
I
I
I
I Packages
3-Pin SOT-89-3 (Package drawing code: UP003-A)
3-Pin TO-92
(Package drawing code: Yx
*1
003-A)
4-Pin SC-82AB
(Package drawing code: NP004-A)
4-Pin SNB(B)
(Package drawing code: BB004-A)
5-Pin SOT-23-5 (Package drawing code: MP005-A)
*1. x changes according to the packing form in TO-92 S; Bulk and F; Tape and Reel Z; Tape and ammo.
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
2
Seiko Instruments Inc.
I
I
I
I Block Diagrams
1. Active low Nch open-drain
2. Active low CMOS output
-
+
VREF
+
-
OUT
VDD
VSS
*1
*1
VREF
OUT
*1
VDD
VSS
*1
*1
*1. Parasitic diode
Figure 1
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
3
I
I
I
I Pin Configuration
See the attached drawings for details of the package.
Table 1 Pin Description
Figure 2
Table 2 Pin Description
Figure 3
Table 3 Pin Description
Figure 4
No. Symbol
Description
1
OUT
Voltage detection output pin
2
VDD
Voltage input pin
3
NC
*1
Non-connected
4 VSS
Ground
pin
4
3
1
2
TO-92
Bottom view
1
3
2
No. Symbol
Description
1
OUT
Voltage detection output pin
2
VDD
Voltage input pin
3
VSS
Ground pin
No. Symbol
Description
1
OUT
Voltage detection output pin
2
VDD
Voltage input pin
3
VSS
Ground pin
3
1
2
SC-82AB
Top view
*1. NC pin is electrically open.
Connecting this pin to VDD or VSS is allowed.
SOT-89-3
Top view
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
4
Seiko Instruments Inc.
Table 4 Pin Description
Figure 5
Table 5 Pin Description
4
3
2
1
Figure 6
No. Symbol
Description
1
OUT
Voltage detection output pin
2
VDD
Voltage input pin
3 VSS
Ground
pin
4
NC
*1
Non-connected
5 NC
*1
Non-connected
5
4
1
3
2
No. Symbol
Description
1
OUT
Voltage detection output pin
2 VSS
Ground
pin
3
NC
*1
Non-connected
4
VDD
Voltage input pin
SOT-23-5
Top view
4-Pin SNB(B)
Top view
*1. NC Pin is electrically open.
Connecting this pin to VDD or VSS is allowed.
*1. NC Pin is electrically open.
Connecting this pin to VDD or VSS is allowed.
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
5
I
I
I
I Selection Guide
1. Product Name
1-1 Package: 4-Pin SNB(B), SC-82AB, SOT-23-5, SOT-89-3
S-808xx C x xx - xxx - xx
Directions of the IC in tape form.
*1
TF: 4-Pin SNB(B)
T2: SC-82AB, SOT-23-5, SOT-89-3
Product code
*2
Package code
BB: 4-Pin SNB(B)
NB:
SC-82AB
MC:
SOT-23-5
UA:
SOT-89-3
Output form
N: Active low Nch open-drain
L: Active low CMOS output
Detection voltage (Detection voltage
10)
08 to 60 (0.8 to.6.0 V)
*1. Please refer taping drawings at the end this book for directions of this IC in tape form.
TF and T2 are the standards.
*2. Please refer Table 6 and 7 for product code.
1-2 Package: TO-92
S-808xx C x Y -x
Product code
B: Bulk
Z: Tape and ammo
T: Tape and Reel
Package code
Y:
TO-92
Output form
N: Active low Nch open-drain
L: Active low CMOS output
Detection voltage (Detection voltage
10)
15 to 60 (1.5 V to 6.0 V)
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
6
Seiko Instruments Inc.
2. Product Name List
2-1 Active Low Nch Open-drain
Table 6 Selection Guide
Detection
voltage
range
Hysteresis
width
(typ.)
SC-82AB
TO-92
*2
SOT-89-3 SOT-23-5
4-Pin
SNB(B)
0.8 V
2.0% 0.034V S-80808CNNB-B9M-T2
S-80808CNBB-B9M-TF
0.9 V
2.0% 0.044V S-80809CNNB-B9N-T2
S-80809CNBB-B9N-
TF
1.0 V
2.0% 0.054V S-80810CNNB-B9O-T2
S-80810CNBB-B9O-
TF
1.1 V
2.0% 0.064V S-80811CNNB-B9P-T2
S-80811CNBB-B9P-
TF
1.2 V
2.0% 0.073V S-80812CNNB-B9Q-T2
S-80812CNBB-B9Q-
TF
1.3 V
2.0% 0.083V S-80813CNNB-B9R-T2
S-80813CNBB-B9R-
TF
1.4 V
2.0% 0.093V S-80814CNNB-B9S-T2
S-80814CNBB-B9S-
TF
1.5 V
2.0% 0.075
V S-80815CNNB-B8A-T2 S-80815CNY-x S-80815CNUA-B8A-T2 S-80815CNMC-B8A-T2 S-80815CNBB-B8A-TF
1.6 V
2.0% 0.080
V S-80816CNNB-B8B-T2 S-80816CNY-x S-80816CNUA-B8B-T2 S-80816CNMC-B8B-T2 S-80816CNBB-B8B-TF
1.7 V
2.0% 0.085
V S-80817CNNB-B8C-T2 S-80817CNY-x S-80817CNUA-B8C-T2 S-80817CNMC-B8C-T2 S-80817CNBB-B8C-TF
1.8 V
2.0% 0.090
V S-80818CNNB-B8D-T2 S-80818CNY-x S-80818CNUA-B8D-T2 S-80818CNMC-B8D-T2 S-80818CNBB-B8D-TF
1.9 V
2.0% 0.095
V S-80819CNNB-B8E-T2 S-80819CNY-x S-80819CNUA-B8E-T2 S-80819CNMC-B8E-T2 S-80819CNBB-B8E-TF
2.0 V
2.0% 0.100
V S-80820CNNB-B8F-T2 S-80820CNY-x S-80820CNUA-B8F-T2 S-80820CNMC-B8F-T2 S-80820CNBB-B8F-TF
2.1 V
2.0% 0.105
V S-80821CNNB-B8G-T2 S-80821CNY-x S-80821CNUA-B8G-T2 S-80821CNMC-B8G-T2 S-80821CNBB-B8G-TF
2.2 V
2.0% 0.110
V S-80822CNNB-B8H-T2 S-80822CNY-x S-80822CNUA-B8H-T2 S-80822CNMC-B8H-T2 S-80822CNBB-B8H-TF
2.3 V
2.0% 0.115
V S-80823CNNB-B8I-T2 S-80823CNY-x S-80823CNUA-B8I-T2 S-80823CNMC-B8I-T2 S-80823CNBB-B8I-TF
2.4 V
2.0% 0.120
V S-80824CNNB-B8J-T2 S-80824CNY-x S-80824CNUA-B8J-T2 S-80824CNMC-B8J-T2 S-80824CNBB-B8J-TF
2.4 V typ.
4.4
0.1 V
*3
S-80824KNY-x
*1
S-80824KNUA-D2B-T2
*1
2.5 V
2.0% 0.125
V S-80825CNNB-B8K-T2 S-80825CNY-x S-80825CNUA-B8K-T2 S-80825CNMC-B8K-T2 S-80825CNBB-B8K-TF
2.6 V
2.0% 0.130
V S-80826CNNB-B8L-T2 S-80826CNY-x S-80826CNUA-B8L-T2 S-80826CNMC-B8L-T2 S-80826CNBB-B8L-TF
2.7 V
2.0% 0.135
V S-80827CNNB-B8M-T2 S-80827CNY-x S-80827CNUA-B8M-T2 S-80827CNMC-B8M-T2 S-80827CNBB-B8M-TF
2.8 V
2.0% 0.140
V S-80828CNNB-B8N-T2 S-80828CNY-x S-80828CNUA-B8N-T2 S-80828CNMC-B8N-T2 S-80828CNBB-B8N-TF
2.9 V
2.0% 0.145
V S-80829CNNB-B8O-T2 S-80829CNY-x S-80829CNUA-B8O-T2 S-80829CNMC-B8O-T2 S-80829CNBB-B8O-TF
3.0 V
2.0% 0.150
V S-80830CNNB-B8P-T2 S-80830CNY-x S-80830CNUA-B8P-T2 S-80830CNMC-B8P-T2 S-80830CNBB-B8P-TF
3.1 V
2.0% 0.155
V S-80831CNNB-B8Q-T2 S-80831CNY-x S-80831CNUA-B8Q-T2 S-80831CNMC-B8Q-T2 S-80831CNBB-B8Q-TF
3.2 V
2.0% 0.160
V S-80832CNNB-B8R-T2 S-80832CNY-x S-80832CNUA-B8R-T2 S-80832CNMC-B8R-T2 S-80832CNBB-B8R-TF
3.3 V
2.0% 0.165
V S-80833CNNB-B8S-T2 S-80833CNY-x S-80833CNUA-B8S-T2 S-80833CNMC-B8S-T2 S-80833CNBB-B8S-TF
3.4 V
2.0% 0.170
V S-80834CNNB-B8T-T2 S-80834CNY-x S-80834CNUA-B8T-T2 S-80834CNMC-B8T-T2 S-80834CNBB-B8T-TF
3.5 V
2.0% 0.175
V S-80835CNNB-B8U-T2 S-80835CNY-x S-80835CNUA-B8U-T2 S-80835CNMC-B8U-T2 S-80835CNBB-B8U-TF
3.6 V
2.0% 0.180
V S-80836CNNB-B8V-T2 S-80836CNY-x S-80836CNUA-B8V-T2 S-80836CNMC-B8V-T2 S-80836CNBB-B8V-TF
3.7 V
2.0% 0.185
V S-80837CNNB-B8W-T2 S-80837CNY-x S-80837CNUA-B8W-T2
S-80837CNMC-B8W-T2 S-80837CNBB-B8W-TF
3.8 V
2.0% 0.190
V S-80838CNNB-B8X-T2 S-80838CNY-x S-80838CNUA-B8X-T2 S-80838CNMC-B8X-T2 S-80838CNBB-B8X-TF
3.9 V
2.0% 0.195
V S-80839CNNB-B8Y-T2 S-80839CNY-x S-80839CNUA-B8Y-T2 S-80839CNMC-B8Y-T2 S-80839CNBB-B8Y-TF
4.0 V
2.0% 0.200
V S-80840CNNB-B8Z-T2 S-80840CNY-x S-80840CNUA-B8Z-T2 S-80840CNMC-B8Z-T2 S-80840CNBB-B8Z-TF
4.1 V
2.0% 0.205
V S-80841CNNB-B82-T2 S-80841CNY-x S-80841CNUA-B82-T2 S-80841CNMC-B82-T2 S-80841CNBB-B82-TF
4.2 V
2.0% 0.210
V S-80842CNNB-B83-T2 S-80842CNY-x S-80842CNUA-B83-T2 S-80842CNMC-B83-T2 S-80842CNBB-B83-TF
4.3 V
2.0% 0.215
V S-80843CNNB-B84-T2 S-80843CNY-x S-80843CNUA-B84-T2 S-80843CNMC-B84-T2 S-80843CNBB-B84-TF
4.4 V
2.0% 0.220
V S-80844CNNB-B85-T2 S-80844CNY-x S-80844CNUA-B85-T2 S-80844CNMC-B85-T2 S-80844CNBB-B85-TF
4.5 V
2.0% 0.225
V S-80845CNNB-B86-T2 S-80845CNY-x S-80845CNUA-B86-T2 S-80845CNMC-B86-T2 S-80845CNBB-B86-TF
4.6 V
2.0% 0.230
V S-80846CNNB-B87-T2 S-80846CNY-x S-80846CNUA-B87-T2 S-80846CNMC-B87-T2 S-80846CNBB-B87-TF
4.6 V
0.10 V 0.10 V max.
S-80846KNY-x
*1
S-80846KNUA-D2C-T2
*1
4.7 V
2.0% 0.235
V S-80847CNNB-B88-T2 S-80847CNY-x S-80847CNUA-B88-T2 S-80847CNMC-B88-T2 S-80847CNBB-B88-TF
4.8 V
2.0% 0.240
V S-80848CNNB-B89-T2 S-80848CNY-x S-80848CNUA-B89-T2 S-80848CNMC-B89-T2 S-80848CNBB-B89-TF
4.9 V
2.0% 0.245
V S-80849CNNB-B9A-T2 S-80849CNY-x S-80849CNUA-B9A-T2 S-80849CNMC-B9A-T2 S-80849CNBB-B9A-TF
5.0 V
2.0% 0.250
V S-80850CNNB-B9B-T2 S-80850CNY-x S-80850CNUA-B9B-T2 S-80850CNMC-B9B-T2 S-80850CNBB-B9B-TF
5.1 V
2.0% 0.255
V S-80851CNNB-B9C-T2 S-80851CNY-x S-80851CNUA-B9C-T2 S-80851CNMC-B9C-T2 S-80851CNBB-B9C-TF
5.2 V
2.0% 0.260
V S-80852CNNB-B9D-T2 S-80852CNY-x S-80852CNUA-B9D-T2 S-80852CNMC-B9D-T2 S-80852CNBB-B9D-TF
5.3 V
2.0% 0.265
V S-80853CNNB-B9E-T2 S-80853CNY-x S-80853CNUA-B9E-T2 S-80853CNMC-B9E-T2 S-80853CNBB-B9E-TF
5.4 V
2.0% 0.270
V S-80854CNNB-B9F-T2 S-80854CNY-x S-80854CNUA-B9F-T2 S-80854CNMC-B9F-T2 S-80854CNBB-B9F-TF
5.5 V
2.0% 0.275
V S-80855CNNB-B9G-T2 S-80855CNY-x S-80855CNUA-B9G-T2 S-80855CNMC-B9G-T2 S-80855CNBB-B9G-TF
5.6 V
2.0% 0.280
V S-80856CNNB-B9H-T2 S-80856CNY-x S-80856CNUA-B9H-T2 S-80856CNMC-B9H-T2 S-80856CNBB-B9H-TF
5.7 V
2.0% 0.285
V S-80857CNNB-B9I-T2 S-80857CNY-x S-80857CNUA-B9I-T2 S-80857CNMC-B9I-T2 S-80857CNBB-B9I-TF
5.8 V
2.0% 0.290
V S-80858CNNB-B9J-T2 S-80858CNY-x S-80858CNUA-B9J-T2 S-80858CNMC-B9J-T2 S-80858CNBB-B9J-TF
5.9 V
2.0% 0.295
V S-80859CNNB-B9K-T2 S-80859CNY-x S-80859CNUA-B9K-T2 S-80859CNMC-B9K-T2 S-80859CNBB-B9K-TF
6.0 V
2.0% 0.300
V S-80860CNNB-B9L-T2 S-80860CNY-x S-80860CNUA-B9L-T2 S-80860CNMC-B9L-T2 S-80860CNBB-B9L-TF
*1. Please refer to the Table 13 or 15 in the Electrical Characteristics.
*2. x changes according to the packing form in TO-92. B; Bulk and T; Tape and Reel and Z; Tape and ammo.
*3. Describes the release voltage.
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
7
2-2 Active Low CMOS output
Table 7 Selection Guide
Detection
voltage
range
Hysteresis
width
(typ.)
SC-82AB
TO-92
*2
SOT-89-3 SOT-23-5 4-Pin
SNB(B)
0.8 V
2.0% 0.034
V S-80808CLNB-B7M-T2
S-80808CLBB-B7M-TF
0.9 V
2.0% 0.044
V S-80809CLNB-B7N-T2
S-80809CLBB-B7N-
TF
1.0 V
2.0% 0.054
V S-80810CLNB-B7O-T2
S-80810CLBB-B7O-
TF
1.1 V
2.0% 0.064
V S-80811CLNB-B7P-T2
S-80811CLBB-B7P-
TF
1.2 V
2.0% 0.073
V S-80812CLNB-B7Q-T2
S-80812CLBB-B7Q-
TF
1.3 V
2.0% 0.083
V S-80813CLNB-B7R-T2
S-80813CLBB-B7R-
TF
1.4 V
2.0% 0.093
V S-80814CLNB-B7S-T2
S-80814CLBB-B7S-
TF
1.5 V
2.0% 0.075
V S-80815CLNB-B6A-T2
S-80815CLY-x
S-80815CLUA-B6A-T2
S-80815CLMC-B6A-T2 S-80815CLBB-B6A-TF
1.6 V
2.0% 0.080
V S-80816CLNB-B6B-T2
S-80816CLY-x
S-80816CLUA-B6B-T2
S-80816CLMC-B6B-T2 S-80816CLBB-B6B-TF
1.7 V
2.0% 0.085
V S-80817CLNB-B6C-T2
S-80817CLY-x
S-80817CLUA-B6C-T2
S-80817CLMC-B6C-T2 S-80817CLBB-B6C-TF
1.8 V
2.0% 0.090
V S-80818CLNB-B6D-T2
S-80818CLY-x
S-80818CLUA-B6D-T2
S-80818CLMC-B6D-T2 S-80818CLBB-B6D-TF
1.9 V
2.0% 0.095
V S-80819CLNB-B6E-T2
S-80819CLY-x
S-80819CLUA-B6E-T2
S-80819CLMC-B6E-T2 S-80819CLBB-B6E-TF
2.0 V
2.0% 0.100
V S-80820CLNB-B6F-T2
S-80820CLY-x
S-80820CLUA-B6F-T2
S-80820CLMC-B6F-T2 S-80820CLBB-B6F-TF
2.1 V
2.0% 0.105
V S-80821CLNB-B6G-T2 S-80821CLY-x S-80821CLUA-B6G-T2 S-80821CLMC-B6G-T2 S-80821CLBB-B6G-TF
2.2 V
2.0% 0.110
V S-80822CLNB-B6H-T2
S-80822CLY-x
S-80822CLUA-B6H-T2
S-80822CLMC-B6H-T2 S-80822CLBB-B6H-TF
2.3 V
2.0% 0.115
V S-80823CLNB-B6I-T2 S-80823CLY-x S-80823CLUA-B6I-T2 S-80823CLMC-B6I-T2 S-80823CLBB-B6I-TF
2.4 V
2.0% 0.120
V S-80824CLNB-B6J-T2
S-80824CLY-x
S-80824CLUA-B6J-T2 S-80824CLMC-B6J-T2 S-80824CLBB-B6J-TF
2.5 V
2.0% 0.125
V S-80825CLNB-B6K-T2
S-80825CLY-x
S-80825CLUA-B6K-T2
S-80825CLMC-B6K-T2 S-80825CLBB-B6K-TF
2.6 V
2.0% 0.130
V S-80826CLNB-B6L-T2
S-80826CLY-x
S-80826CLUA-B6L-T2 S-80826CLMC-B6L-T2 S-80826CLBB-B6L-TF
2.7 V
2.0% 0.135
V S-80827CLNB-B6M-T2
S-80827CLY-x
S-80827CLUA-B6M-T2
S-80827CLMC-B6M-T2 S-80827CLBB-B6M-TF
2.8 V
2.0% 0.140
V S-80828CLNB-B6N-T2
S-80828CLY-x
S-80828CLUA-B6N-T2
S-80828CLMC-B6N-T2 S-80828CLBB-B6N-TF
2.9 V
2.0% 0.145
V S-80829CLNB-B6O-T2 S-80829CLY-x S-80829CLUA-B6O-T2 S-80829CLMC-B6O-T2 S-80829CLBB-B6O-TF
3.0 V
2.0% 0.150
V S-80830CLNB-B6P-T2
S-80830CLY-x
S-80830CLUA-B6P-T2
S-80830CLMC-B6P-T2 S-80830CLBB-B6P-TF
3.1 V
2.0% 0.155
V S-80831CLNB-B6Q-T2 S-80831CLY-x S-80831CLUA-B6Q-T2 S-80831CLMC-B6Q-T2 S-80831CLBB-B6Q-TF
3.2 V
2.0% 0.160
V S-80832CLNB-B6R-T2
S-80832CLY-x
S-80832CLUA-B6R-T2
S-80832CLMC-B6R-T2 S-80832CLBB-B6R-TF
3.3 V
2.0% 0.165
V S-80833CLNB-B6S-T2
S-80833CLY-x
S-80833CLUA-B6S-T2
S-80833CLMC-B6S-T2 S-80833CLBB-B6S-TF
3.4 V
2.0% 0.170
V S-80834CLNB-B6T-T2
S-80834CLY-x
S-80834CLUA-B6T-T2
S-80834CLMC-B6T-T2 S-80834CLBB-B6T-TF
3.5 V
2.0% 0.175
V S-80835CLNB-B6U-T2
S-80835CLY-x
S-80835CLUA-B6U-T2
S-80835CLMC-B6U-T2 S-80835CLBB-B6U-TF
3.6 V
2.0% 0.180
V S-80836CLNB-B6V-T2
S-80836CLY-x
S-80836CLUA-B6V-T2
S-80836CLMC-B6V-T2 S-80836CLBB-B6V-TF
3.7 V
2.0% 0.185
V S-80837CLNB-B6W-T2
S-80837CLY-x
S-80837CLUA-B6W-T2
S-80837CLMC-B6W-T2
S-80837CLBB-B6W-TF
3.8 V
2.0% 0.190
V S-80838CLNB-B6X-T2
S-80838CLY-x
S-80838CLUA-B6X-T2
S-80838CLMC-B6X-T2 S-80838CLBB-B6X-TF
3.9 V
2.0% 0.195
V S-80839CLNB-B6Y-T2
S-80839CLY-x
S-80839CLUA-B6Y-T2
S-80839CLMC-B6Y-T2 S-80839CLBB-B6Y-TF
4.0 V
2.0% 0.200
V S-80840CLNB-B6Z-T2
S-80840CLY-x
S-80840CLUA-B6Z-T2
S-80840CLMC-B6Z-T2 S-80840CLBB-B6Z-TF
4.1 V
2.0% 0.205
V S-80841CLNB-B62-T2
S-80841CLY-x
S-80841CLUA-B62-T2 S-80841CLMC-B62-T2 S-80841CLBB-B62-TF
4.2 V
2.0% 0.210
V S-80842CLNB-B63-T2
S-80842CLY-x
S-80842CLUA-B63-T2 S-80842CLMC-B63-T2 S-80842CLBB-B63-TF
4.3 V
2.0% 0.215
V S-80843CLNB-B64-T2
S-80843CLY-x
S-80843CLUA-B64-T2 S-80843CLMC-B64-T2 S-80843CLBB-B64-TF
4.4 V
2.0% 0.220
V S-80844CLNB-B65-T2
S-80844CLY-x
S-80844CLUA-B65-T2 S-80844CLMC-B65-T2 S-80844CLBB-B65-TF
4.45 V typ.
4.70 V max.
*3
S-80844KLY-x
*1
S-80844KLUA-D2A-T2
*1
4.5 V
2.0% 0.225
V S-80845CLNB-B66-T2
S-80845CLY-x
S-80845CLUA-B66-T2 S-80845CLMC-B66-T2 S-80845CLBB-B66-TF
4.6 V
2.0% 0.230
V S-80846CLNB-B67-T2
S-80846CLY-x
S-80846CLUA-B67-T2 S-80846CLMC-B67-T2 S-80846CLBB-B67-TF
4.7 V
2.0% 0.235
V S-80847CLNB-B68-T2
S-80847CLY-x
S-80847CLUA-B68-T2 S-80847CLMC-B68-T2 S-80847CLBB-B68-TF
4.8 V
2.0% 0.240
V S-80848CLNB-B69-T2
S-80848CLY-x
S-80848CLUA-B69-T2 S-80848CLMC-B69-T2 S-80848CLBB-B69-TF
4.9 V
2.0% 0.245
V S-80849CLNB-B7A-T2
S-80849CLY-x
S-80849CLUA-B7A-T2
S-80849CLMC-B7A-T2 S-80849CLBB-B7A-TF
5.0 V
2.0% 0.250
V S-80850CLNB-B7B-T2
S-80850CLY-x
S-80850CLUA-B7B-T2
S-80850CLMC-B7B-T2 S-80850CLBB-B7B-TF
5.1 V
2.0% 0.255
V S-80851CLNB-B7C-T2
S-80851CLY-x
S-80851CLUA-B7C-T2
S-80851CLMC-B7C-T2 S-80851CLBB-B7C-TF
5.2 V
2.0% 0.260
V S-80852CLNB-B7D-T2
S-80852CLY-x
S-80852CLUA-B7D-T2
S-80852CLMC-B7D-T2 S-80852CLBB-B7D-TF
5.3 V
2.0% 0.265
V S-80853CLNB-B7E-T2
S-80853CLY-x
S-80853CLUA-B7E-T2
S-80853CLMC-B7E-T2 S-80853CLBB-B7E-TF
5.4 V
2.0% 0.270
V S-80854CLNB-B7F-T2
S-80854CLY-x
S-80854CLUA-B7F-T2
S-80854CLMC-B7F-T2 S-80854CLBB-B7F-TF
5.5 V
2.0% 0.275
V S-80855CLNB-B7G-T2 S-80855CLY-x S-80855CLUA-B7G-T2 S-80855CLMC-B7G-T2 S-80855CLBB-B7G-TF
5.6 V
2.0% 0.280
V S-80856CLNB-B7H-T2
S-80856CLY-x
S-80856CLUA-B7H-T2
S-80856CLMC-B7H-T2 S-80856CLBB-B7H-TF
5.7 V
2.0% 0.285
V S-80857CLNB-B7I-T2 S-80857CLY-x S-80857CLUA-B7I-T2 S-80857CLMC-B7I-T2 S-80857CLBB-B7I-TF
5.8 V
2.0% 0.290
V S-80858CLNB-B7J-T2
S-80858CLY-x
S-80858CLUA-B7J-T2 S-80858CLMC-B7J-T2 S-80858CLBB-B7J-TF
5.9 V
2.0% 0.295
V S-80859CLNB-B7K-T2
S-80859CLY-x
S-80859CLUA-B7K-T2
S-80859CLMC-B7K-T2 S-80859CLBB-B7K-TF
6.0 V
2.0% 0.300
V S-80860CLNB-B7L-T2
S-80860CLY-x
S-80860CLUA-B7L-T2 S-80860CLMC-B7L-T2 S-80860CLBB-B7L-TF
*1. Please refer to the Table 14 in the Electrical Characteristics
.
*2. x changes according to the packing form in TO-92. B; Bulk and T; Tape and Reel and Z; Tape and ammo.
*3. Describes the release voltage.
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
8
Seiko Instruments Inc.
Output Forms
1. Output forms in S-808xxC Series
Nch open-drain (Active low)
CMOS output(Active low)
S-808xxC Series
"N" is the last letter of the Product Name.
e.g. S-80815CN
"L" is the last letter of theProduct Name.
e.g. S-80815CL
2. Output forms and their usage
Usage
Nch ("L")
CMOS ("L")
Different power supplies
Yes
No
Active low reset for CPUs
Yes
Yes
Active high reset for CPUs
No
No
Detection voltage change by resistor divider
Yes
No
Example for two power supplies Examples for one power supply
V/D
Nch
V/D
Nch
V/D
CMOS
CPU
CPU
CPU
V
DD1
V
DD2
V
DD
V
DD
OUT
OUT
OUT
V
SS
V
SS
V
SS
Figure 7
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
9
Absolute Maximum Ratings
Table 8
1. Products with detection voltage Typ. 1.4 V or less
(Unless otherwise specified :Ta
=25C)
Parameter Symbol
Ratings
Unit
Power supply voltage
V
DD
-V
SS
7
V
Nch open-drain
V
SS
-0.3 to V
SS
+7
Output voltage
CMOS output
V
OUT
V
SS
-0.3 to V
DD
+0.3
V
Output current
I
OUT
50
mA
SC-82AB 150
Power dissipation
P
D
4-Pin SNB(B)
60
mW
Operating temperature
T
opr
-40 to +85 C
Storage temperature
T
stg
-40 to +125 C
2. Products with detection voltage Typ. 1.5 V or more
(Unless otherwise specified :Ta
=25C)
Parameter Symbol
Ratings
Unit
Power supply voltage
V
DD
-V
SS
12
V
Nch open-drain
V
SS
-0.3 to V
SS
+12
Output voltage
CMOS output
V
OUT
V
SS
-0.3 to V
DD
+0.3
V
Output current
I
OUT
50
mA
TO-92 400
SOT-89-3 500
SOT-23-5 250
SC-82AB 150
Power dissipation
P
D
4-Pin SNB(B)
60
mW
Operating temperature
T
opr
-40 to +85 C
Storage temperature
T
stg
-40 to +125 C
Caution The absolute maximum ratings are rated values exceeding which the product could
suffer physical damage. These values must therefore not be exceeded under
any conditions.
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
10
Seiko Instruments Inc.
I
I
I
I Electrical Characteristics
1. Nch open-drain products (
Detection voltage
Typ.1.4 V or less)
Table 9
(Unless otherwise specified :Ta
=25C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Test
circuit
S-80808 0.784
0.800
0.816
S-80809 0.882
0.900
0.918
S-80810 0.980
1.000
1.020
S-80811 1.078
1.100
1.122
S-80812 1.176
1.200
1.224
S-80813 1.274
1.300
1.326
Detection voltage
*1
-V
DET
S-80814 1.372
1.400
1.428
V 1
S-80808 0.802
0.834
0.867
S-80809 0.910
0.944
0.979
S-80810 1.017
1.054
1.091
S-80811 1.125
1.164
1.203
S-80812 1.232
1.273
1.315
S-80813 1.340
1.383
1.427
Release voltage
+V
DET
S-80814 1.448
1.493
1.538
V 1
S-80808 0.018
0.034
0.051
S-80809 0.028
0.044
0.061
S-80810 0.037
0.054
0.071
S-80811 0.047
0.064
0.081
S-80812 0.056
0.073
0.091
S-80813 0.066
0.083
0.101
Hysteresis width
V
HYS
S-80814 0.076
0.093
0.110
V 1
V
DD
=1.5 V
S-80808 to 09
--
1.3
3.5
Current consumption
I
SS
V
DD
=2.0 V
S-80810 to 14
--
1.3
3.5
A
2
Operating voltage
V
DD
S-80808 to 14
0.65
--
5.0
V
1
Output current of
output transistor
I
OUT
Nch
V
DS
=0.5 V
V
DD
=0.7 V
S-80808 to 14
0.04 0.2 -- mA 3
Leakage current of
output transistor
I
LEAK
Nch
V
DS
=5.0V, V
DD
=5.0 V
S-80808 to 14
-- -- 60
nA
3
Response time
t
PLH
--
--
--
60
s
1
Temperature
coefficient for
detection voltage
*2
-
V
Ta V
DET
DET
-
Ta
=-40C to +85C
--
100
350 ppm/C 1
*1.
-V
DET
: Actual detection voltage value
*2. Temperature change ratio for the detection voltage [mV/C] is calculated using the following equation.
[
]
[ ]
[
]
1000
C
ppm/
V
Ta
V
V
V
C
mV/
Ta
V
DET
DET
DET(S)
DET
-
-
-
=
-
Specified detection voltage
Temperature coefficient for detection voltage
Temperature change ratio for detection voltage
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
11
2. Nch open-drain products (
Detection voltage
Typ.1.5 V or more)
Table 10
(Unless otherwise specified :Ta
=25C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Test
circuit
Detection voltage
*1
-V
DET
--
-V
DET (S)
0.98
-V
DET (S)
-
V
DET (S)
1.02
V 1
Hysteresis width
V
HYS
-- -
V
DET
0.03
-V
DET
0.05
-V
DET
0.08
V 1
V
DD
=3.5 V S-80815 to 26
--
0.8
2.4
V
DD
=4.5 V S-80827 to 39
--
0.8
2.4
V
DD
=6.0 V S-80840 to 56
--
0.9
2.7
Current consumption
I
SS
V
DD
=7.5 V S-80857 to 60
--
0.9
2.7
A 2
Operating voltage
V
DD
S-80815 to 60
0.95
--
10.0
V
1
V
DD
=1.2 V
S-80815 to 60
0.59 1.36 --
Output current of
output transistor
I
OUT
Nch
V
DS
=0.5 V V
DD
=2.4 V
S-80827 to 60
2.88 4.98 --
mA 3
Leakage current of
output transistor
I
LEAK
Nch
V
DS
= 10.0 V, V
DD
=10.0 V
S-80815 to 60
-- -- 100
nA
3
Response time
t
PLH
-- --
--
60
s 1
Temperature
coefficient for
detection voltage
*2
-
V
Ta V
DET
DET
-
Ta
=-40C to +85C --
100
350 ppm/C 1
*1.
-V
DET
: Actual detection voltage value
-V
DET (S)
: Specified detection voltage value (The center value of the detection voltage range in Table 6 and
Table 7)
*2. Temperature change ratio for the detection voltage [mV/C] is calculated using the following equation.
[
]
[ ]
[
]
1000
C
ppm/
V
Ta
V
V
V
C
mV/
Ta
V
DET
DET
DET(S)
DET
-
-
-
=
-
Specified detection voltage
Temperature coefficient for detection voltage
Temperature change ratio for detection voltage
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
12
Seiko Instruments Inc.
3. CMOS output products (Detection voltage Typ.1.4 V or less)
Table 11
(Unless otherwise specified :Ta
=25C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Test
circuit
S-80808 0.784
0.800
0.816
S-80809 0.882
0.900
0.918
S-80810 0.980
1.000
1.020
S-80811 1.078
1.100
1.122
S-80812 1.176
1.200
1.224
S-80813 1.274
1.300
1.326
Detection voltage
*1
-V
DET
S-80814 1.372
1.400
1.428
V 1
S-80808 0.802
0.834
0.867
S-80809 0.910
0.944
0.979
S-80810 1.017
1.054
1.091
S-80811 1.125
1.164
1.203
S-80812 1.232
1.273
1.315
S-80813 1.340
1.383
1.427
Release voltage
+V
DET
S-80814 1.448
1.493
1.538
V 1
S-80808 0.018
0.034
0.051
S-80809 0.028
0.044
0.061
S-80810 0.037
0.054
0.071
S-80811 0.047
0.064
0.081
S-80812 0.056
0.073
0.091
S-80813 0.066
0.083
0.101
Hysteresis width
V
HYS
S-80814 0.076
0.093
0.110
V 1
V
DD
=1.5 V
S-80808 to 09
--
1.3
3.5
Current consumption
I
SS
V
DD
=2.0 V
S-80810 to 14
--
1.3
3.5
A
2
Operating voltage
V
DD
S-80808 to 14
0.65
--
5.0
V
1
Nch
V
DS
=0.5 V
V
DD
=0.7 V
S-80808 to 14
0.04 0.2 --
3
Output current of
output transistor
I
OUT
Pch
V
DS
=2.1 V
V
DD
=4.5 V
S-80808 to 14
2.9 5.8 --
mA
4
Response time
t
PLH
-- --
--
60
s 1
Temperature
coefficient for
detection voltage
*2
-
V
Ta V
DET
DET
-
Ta
=-40C to +85C
--
100
350 ppm/C 1
*1.
-V
DET
: Actual detection voltage value
*2. Temperature change ratio for the detection voltage [mV/C] is calculated using the following equation.
[
]
[ ]
[
]
1000
C
ppm/
V
Ta
V
V
V
C
mV/
Ta
V
DET
DET
DET(S)
DET
-
-
-
=
-
Specified detection voltage
Temperature coefficient for detection voltage
Temperature change ratio for detection voltage
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
13
4. CMOS output products (
Detection voltage
Typ.1.5 V or more)
Table 12
(Unless otherwise specified :Ta
=25C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Test
circuit
Detection voltage
*1
-V
DET
--
-V
DET(S)
0.98
-V
DET(S)
-
V
DET(S)
1.02
V 1
Hysteresis width
V
HYS
-- -
V
DET
0.03
-V
DET
0.05
-V
DET
0.08
V 1
V
DD
=3.5 V
S-80815 to 26
--
0.8
2.4
V
DD
=4.5 V
S-80827 to 39
--
0.8
2.4
V
DD
=6.0 V
S-80840 to 56
--
0.9
2.7
Current consumption
I
SS
V
DD
=7.5 V
S-80857 to 60
--
0.9
2.7
A 2
Operating voltage
V
DD
S-80815 to 60
0.95
--
10.0
V
1
V
DD
=1.2 V
S-80815 to 60
0.59 1.36 --
Nch
V
DS
=0.5 V
V
DD
=2.4 V
S-80827 to 60
2.88 4.98 --
3
V
DD
= 4.8 V
S-80815 to 39
1.43 2.39 --
V
DD
= 6.0 V
S-80840 to 56
1.68 2.78 --
Output current of
output transistor
I
OUT
Pch
V
DS
= 0.5 V
V
DD
=8.4 V
S-80857 to 60
2.08 3.42 --
mA
4
Response time
t
PLH
-- --
--
60
s 1
Temperature
coefficient for
detection voltage
*2
-
V
Ta V
DET
DET
-
Ta
=-40C to +85C --
100
350 ppm/C 1
*1.
-V
DET
: Actual detection voltage value
-V
DET(S)
: Specified detection voltage value (The center value of the detection voltage range in Table 6
and Table 7)
*2. Temperature change ratio for the detection voltage [mV/C] is calculated using the following equation.
[
]
[ ]
[
]
1000
C
ppm/
V
Ta
V
V
V
C
mV/
Ta
V
DET
DET
DET(S)
DET
-
-
-
=
-
Specified detection voltage
Temperature coefficient for detection voltage
Temperature change ratio for detection voltage
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
14
Seiko Instruments Inc.
I
I
I
I Test Circuits
*1. R is unnecessary for CMOS output products.
1.
V
DD
VDD
OUT
VSS
R
*1
100 k
V
V
S-808xxC
series
2.
A
V
DD
VDD
OUT
VSS
S-808xxC
series
V
DD
VDD
V
DS
OUT
VSS
V
V
3.
A
S-808xxC
series
V
DS
V
DD
VDD
OUT
VSS
V
4.
S-808xxC
series
V
A
Figure 8
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
15
I
I
I
I Timing chart
1. Active low Nch open-drain
Release voltage(
+V
DET
)
Detection voltage(
-V
DET
)
V
DD
V
SS
Min.operating voltage
Output from the OUT pin
Hysteresis width
( V
HYS
)
V
DD
V
SS
V
OUT
VDD
VSS
R
100 k
Figure 9
2. Active low CMOS output
Release voltage(
+V
DET
)
Detection voltage(
-V
DET
)
V
DD
V
SS
Min. operating voltage
Hysteresis width
( V
HYS
)
Output from the OUT pin
V
DD
V
SS
V
OUT
VDD
VSS
Caution For values of V
DD
less than minimum
operating voltage, values of OUT terminal
output is free in the shaded region.
Figure 10
I
I
I
I Definition of Terms
1. Detection voltage (
-
-
-
-V
DET
)
The detection voltage (
-V
DET
) is a voltage at which the output turns to low. The detection voltage
varies slightly among products of the same specification. The variation of detection voltage between
the minimum [(
-V
DET
)min.] and the maximum [(
-V
DET
)max.] is called the detection voltage range
(See Figure 11).
Example : For the S-80815CN, the detection voltage lies in the range of 1.470
(-V
DET
)
1.530.
This means that some S-80815CNs have 1.470 V for
-V
DET
and some have 1.530 V.
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
16
Seiko Instruments Inc.
2. Release voltage (
+
+
+
+V
DET
)
The release voltage (
+V
DET
) is a voltage at which the output turns to high. The release voltage varies
slightly among products of the same specification. The variation of release voltages between the
minimum [(
+V
DET
)min.] and the maximum [(
+V
DET
)max.] is called the release voltage range (See
Figure 12).
The range is calculed from the actual detection voltage
-V
DET
of a product and is expressed by
-V
DET
1.03
+V
DET
-V
DET
1.08.
Example : For the S-80815CN, the release voltage lies in the range of 1.514
(+V
DET
)
1.652.
This means that some S-80815CNs have 1.514 V for
+V
DET
and some have 1.652 V.
Remark Although the detection voltage and release voltage overlap in the range of 1.514 V to
1.530 V,
+V
DET
is always larger than
-V
DET
.
V
DD
OUT
(
-V
DET
)Max.
(
-V
DET
)Min.
Detection voltage range
Detection voltage
Figure 11 Detection Voltage
(
+V
DET
)Max.
(
+V
DET
)Min.
Release voltage range
V
DD
Release voltage
OUT
Figure 12 Release Voltage
(In case of CMOS output)
3. Hysteresis width (V
HYS
)
The hysteresis width is the voltage difference between the detection voltage and the release voltage
(See Figure 16).
The existence of the hysteresis width avoids malfunction caused by noise on input signal.
4. Through-type
current
The through-type current in a voltage detector is the current which flows instantaneously at the time
of detection and release of a voltage detector. The through-type current is large in CMOS output
products, small in Nch open-drain output products.
5. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 13), taking a
CMOS active low product for example, the through-type current which is generated when the output
goes from low to high (release) causes a voltage drop equal to [through-type current]
[input
resistance] across the resistor. When the input voltage drops below the detection voltage
-V
DET
as a
result, the output voltage goes to low level. In this state, the through-type current stops and its
resultant voltage drop disappears, and the output goes from low to high. A through-type current is
again generated, a voltage drop appears, and oscillation is finally induced by repeating the process.
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
17
Following is an example for bad implementation: input voltage divider for a CMOS output product.
OUT
VSS
VDD
RB
RA
VIN
S-808xxCL
Figure 13 An example for bad implementation
I
I
I
I Standard Circuit
VDD
OUT
*1. R is unnecessary for CMOS output products.
VSS
R
*1
100 k
Figure 14
Caution The above connection diagram and constants do not guarantee correct operation.
Perform sufficient evaluation using the actual application to set the constants.
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
18
Seiko Instruments Inc.
I
I
I
I Operation Description
1. Basic operation : In case of active low CMOS output
A
B
V
DD
V
SS
Release voltage (
+V
DET
)
Detection voltage (-V
DET
)
Min. operating voltage
Output from the OUT pin
Hysteresis
width (V
HYS
)
V
DD
V
SS
(1)
(2) (3)
(5)
(4)
*1. Parasitic diode
+
VRE
OUT
RA
-
RB
RC
N1
Nch
VSS
VDD
*1
*1
*1
Pch
Figure 15 Operation 1
Figure 16 Operation 2
(1) When the power supply voltage V
DD
is higher than the release voltage
+V
DET
, the Nch transistor is
OFF and the Pch transistor is ON to provide V
DD
(high) at the output. Since the Nch transistor N1 in
Figure 15 is OFF, the comparator input voltage is (RB
+RC)/(RA+RB+RC)V
DD
.
(2) When the V
DD
goes below
+V
DET
, the output provides the V
DD
level, as long as the V
DD
remains
above the detection voltage
-V
DET
. When the V
DD
falls below
-V
DET
(point A in Figure 16), the Nch
transistor becomes ON, the Pch transistor becomes OFF, and the V
SS
level appears at the output.
At this time the Nch transistor N1 in Figure 15 becomes ON, the comparator input voltage is
changed to RB/(RA
+RB)V
DD
.
(3) When the V
DD
falls below the minimum operating voltage, the output becomes undefined, or goes
to the V
DD
when the output is pulled up to the V
DD
.
(4) The V
SS
level appears when the V
DD
rises above the minimum operating voltage. The V
SS
level still
appears even when the V
DD
surpasses
-V
DET
, as long as it does not exceed the release voltage
+V
DET
.
(5) When the V
DD
rises above
+V
DET
(point B in Figure 16), the Nch transistor becomes OFF and the
Pch transistor becomes ON to provide V
DD
level at the output.
2. Other
characteristics
(1) Temperature dependence of detection voltage
The temperature dependence of the detection voltage is shown by the shaded area in Figure 17.
S-80827C:
Figure 17 Temperature dependence of Detection Voltage
-40
25
+0.945 mV/C
-V
DET
[V]
85
Ta [
C]
-0.945 mV/C
- V
DET25
- V
DET25
is an actual detection voltage value at 25C.
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
19
(2) Temperature dependence of release voltage
The temperature coefficient +
V
Ta
DET
of the release voltage is calculated by the
temperature coefficient -
V
Ta
DET
of the detection voltage as follows:
+
-
V
Ta
V
V
V
Ta
DET
DET
DET
DET
=
+
-
The temperature coefficients for the release voltage and the detection voltage have the same
sign consequently.
(3) Temperature characteristics of hysteresis voltage
The temperature dependence of hysteresis voltage is expressed as +
-
V
Ta
V
Ta
DET
DET
-
and is calculated as follows:
+
-
-
V
Ta
V
Ta
V
V
V
Ta
DET
DET
HYS
DET
DET
-
=
-
I
I
I
I Electrical Characteristics for customized products
1. S-80824KNUA-D2B-T2 / S-80824KNY-x
Table 13
(Unless otherwise specified:Ta
=25 C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Test
circuit
Detection voltage
-V
DET
-- 2.295
2.400
2.505
Release voltage
+ V
DET
-- 4.300
4.400
4.500
V 1
Current consumption
I
SS
V
DD
=6.0 V
--
0.8
2.4
A 2
Operating voltage
V
DD
-- 0.95
--
10.0
V
1
V
DD
=0.95 V
0.03
0.24
--
Output current of
output transistor
I
OUT
Nch
V
DS
=0.5 V V
DD
=1.2 V
0.23
0.50
--
mA 3
Leakage current of
output transistor
I
LEAK
Nch
V
DS
=10.0 V, V
DD
=10.0 V
-- -- 0.1
A 3
Response time
t
PLH
-- --
--
60
s 1
Temperature
coefficient for
detection voltage
*1
-
V
Ta V
DET
DET
-
Ta
=-40C to +85C -- 100
350 ppm/C 1
*1. Temperature change ratio for the detection voltage [mV/C] is calculated using the following
equation.
[
]
[ ]
[
]
-
-
= -
-
V
Ta
mV/ C
V
V
V
Ta
V
ppm/ C
1000
DET
DET
DET
DET
Specified detection voltage
Temperature coefficient for detection voltage
Temperature change ratio for detection voltage
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
20
Seiko Instruments Inc.
2. S-80844KLUA-D2A-T2 / S-80844KLY-x
Table 14
(Unless otherwise specified:Ta
=25 C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Test
circuit
Detection voltage
-V
DET
-- 4.295
4.450
4.605
Release voltage
+V
DET
-- --
--
4.700
V 1
Current consumption
I
SS
V
DD
=6.0 V
--
1.0
3.0
A
2
Operating voltage
V
DD
--
0.95
--
10.0
V
1
V
DD
=1.2 V
0.23
0.50
--
Nch
V
DS
=0.5 V V
DD
=2.4 V
1.60
3.70
--
3
Output current of
output transistor
I
OUT
Pch
V
DS
= 0.5 V
V
DD
=4.8 V
0.36
0.62
--
mA
4
Response time
t
PLH
-- --
--
60
s 1
Temperature
coefficient for
detection voltage
*1
-
V
Ta V
DET
DET
-
Ta
=-40C to +85C
--
100
350 ppm/C 1
*1. Temperature change ratio for the detection voltage [mV/C] is calculated using the following equation.
[
]
[ ]
[
]
-
-
= -
-
V
Ta
mV/ C
V
V
V
Ta
V
ppm/ C
1000
DET
DET
DET
DET
3. S-80846KNUA-D2C-T2 / S-80846KNY-x
Table 15
(Unless otherwise specified:Ta
=25 C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Test
circuit
Detection voltage
-V
DET
--
4.500
4.600
4.700
Hysteresis width
V
HYS
-- --
0.05
0.10
V 1
Current consumption
I
SS
V
DD
=6.0 V
--
0.9
2.7
A 2
Operating voltage
V
DD
--
0.95
--
10.0
V
1
V
DD
=1.2 V
0.59
1.36
--
Output current of
output transistor
I
OUT
Nch
V
DS
=0.5 V V
DD
=2.4 V
2.88
4.98
--
mA 3
Leakage current of
output transistor
I
LEAK
Nch
V
DD
=10.0 V, V
DS
=10.0 V
-- -- 0.1
A 3
Response time
t
PLH
-- --
--
60
s 1
Temperature
coefficient for
detection voltage
*1
-
V
Ta V
DET
DET
-
Ta
=-40C to +85C
--
100
350 ppm/C 1
*1. Temperature change ratio for the detection voltage [mV/C] is calculated using the following equation.
[
]
[ ]
[
]
-
-
= -
-
V
Ta
mV/ C
V
V
V
Ta
V
ppm/ C
1000
DET
DET
DET
DET
Specified detection voltage
Temperature coefficient for detection voltage
Temperature change ratio for detection voltage
Specified detection voltage
Temperature coefficient for detection voltage
Temperature change ratio for detection voltage
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
21
I
I
I
I Typical Characteristics
(1) Detection voltage (V
DET
) - Temperature (Ta)
0.75
0.80
0.85
0.90
-40
-20
0
20
40
60
80
Ta (C)
V
DET
(V
)
S-80808CL
+V
DET
-V
DET
1.25
1.30
1.35
1.40
1.45
1.50
1.55
-40 -20 0 20 40 60 80
Ta (C)
V
DET
(V
)
S-80814CL
+V
DET
-V
DET
1.45
1.50
1.55
1.60
-40 -20 0 20 40 60 80
Ta (C)
V
DET
(V
)
S-80815CL
+V
DET
-V
DET
5.80
5.90
6.00
6.10
6.20
6.30
6.40
-40 -20 0 20 40 60 80
Ta (C)
V
DET
(V
)
S-80860CL
+V
DET
-V
DET
(2) Hysteresis voltage width (V
HYS
) - Temperature (Ta)
3.0
4.0
5.0
6.0
8.0
-40 -20 0 20 40 60 80
Ta (C)
V
HY
S
(%
)
S-80808CL
7.0
3.0
4.0
5.0
6.0
8.0
-40 -20 0 20 40 60 80
Ta (C)
V
HY
S
(%
)
S-80814CL
7.0
3.0
4.0
5.0
6.0
8.0
-40 -20 0 20 40 60 80
Ta (C)
V
HY
S
(%
)
S-80815CL
7.0
4.0
5.0
6.0
7.0
8.0
-40 -20 0 20 40 60 80
Ta (C)
V
HY
S
(%
)
S-80860CL
3.0
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
22
Seiko Instruments Inc.
(3) Current consumption (I
SS
) - Input voltage (V
DD
)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 1.0 2.0 3.0 4.0 5.0 6.0
V
DD
(V)
I
SS
(
A
)
S-80808CL
9.3
A
Ta=25C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 1.0 2.0 3.0 4.0 5.0 6.0
V
DD
(V)
S-80814CL
21.5
A
Ta=25C
I
SS
(
A
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 2.0 4.0 6.0 8.0 10.0 12.0
V
DD
(V)
I
SS
(
A
)
S-80815CL
4.7
A
Ta=25C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 2.0 4.0 6.0 8.0
10.0
12.0
V
DD
(V)
S-80860CL
12.8
A
Ta=25C
I
SS
(
A)
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
23
(4) Current consumption (I
SS
) - Temperature (Ta)
0.0
0.5
1.0
1.5
2.0
-40 -20 0 20 40 60 80
Ta (C)
I
SS
(
A
)
S-80808CL
V
DD
=1.5 V
0.0
0.5
1.0
1.5
2.0
-40 -20 0 20 40 60 80
Ta (C)
I
SS
(
A
)
S-80814CL
V
DD
=2.0 V
0.0
0.5
1.0
1.5
2.0
-40 -20 0 20 40 60 80
Ta (C)
I
SS
(
A
)
S-80815CL
V
DD
=3.5 V
0.0
0.5
1.0
1.5
2.0
-40 -20 0 20 40 60 80
Ta (C)
I
SS
(
A)
S-80860CL
V
DD
=7.5 V
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
24
Seiko Instruments Inc.
(5) Nch transistor output current (I
OUT
) -V
DS
0
1.0
2.0
3.0
4.0
5.0
0 0.5
1.0 1.5 2.0 2.5
V
DS
(V)
I
OU
T
(m
A
)
S-80814CL/CN
Ta=25C
V
DD
=0.7 V
V
DD
=1.0 V
V
DD
=1.3 V
0
10
20
30
40
50
0 1.0 2.0 3.0 4.0 5.0
V
DS
(V)
I
OU
T
(m
A
)
6.0 V
S-80860CL/CN
Ta=25C
V
DD
=1.2 V
2.4 V
3.6 V
4.8 V
(6) Pch transistor output current (I
OUT
) -V
DS
S-80808CL
0
1.0
2.0
3.0
4.0
5.0
0 0.5 1.0 1.5 2.0 2.5
V
DS
(V)
I
OU
T
(m
A
)
Ta=25C
V
DD
=2.9V
V
DD
=2.4V
V
DD
=1.4 V
V
DD
=0.9 V
V
DD
=1.9 V
S-80815CL
0
5
10
15
20
25
30
0 2.0 4.0 6.0 8.0 10.0
V
DS
(V)
I
OU
T
(m
A
)
Ta=25C
8.4 V
7.2 V
6.0 V
3.6 V
V
DD
=2.4 V
4.8 V
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
25
(7) Nch transistor output current (I
OUT
)
0
1.5
3.0
4.5
6.0
0 0.5
1.0
1.5
2.0
V
DD
(V)
I
OU
T
(m
A
)
S-80814CL/CN
V
DS
=0.5 V
Ta=85
Ta=-40C
Ta=25C
0
5
10
15
20
0 2.0 4.0 6.0 8.0
V
DD
(V)
I
OU
T
(m
A
)
S-80860CL/CN
V
DS
=0.5 V
Ta=-40C
Ta=25C
Ta=85C
(8) Pch transistor output current (I
OUT
)
0
0.5
1.0
1.5
2.0
2.5
3.0
0 1.0 2.0 3.0 4.0 5.0 6.0
V
DD
(V)
I
OU
T
(m
A
)
S-80808CL
V
DS
=0.5 V
Ta=-40C
Ta=25C
Ta=85C
0
1
2
3
4
5
6
0 2.0 4.0 6.0 8.0 10.0 12.0
V
DD
(V)
I
OU
T
(m
A
)
S-80815CL
V
DS
=0.5 V
Ta=-40C
Ta=25C
Ta=85C
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
26
Seiko Instruments Inc.
(9) Minimum operating voltage - Input voltage(V
DD
)
0.0
0.3
0.6
0.9
1.2
0.0 0.2 0.4 0.6
1.0
V
DD
(V)
V
OU
T
(V
)
S-80808CN
Pull-up to V
DD
100 k
Ta=-40C
Ta=25C
Ta=85C
0.8
0.0
1.0
2.0
3.0
4.0
0.2 0.4 0.6 0.8 1.0
V
DD
(V)
V
OU
T
(V
)
S-80808CN
Pull-up to 3 V
Ta=-40C
Ta=25C
Ta=85C
0.0
0.5
1.0
1.5
2.0
0 0.5 1.0
1.5 2.0
V
DD
(V)
V
OU
T
(V
)
S-80815CN
Pull-up to V
DD
100 k
Ta=-40C
Ta=25C
Ta=85C
0.0
1.0
2.0
3.0
4.0
0 0.5
1.0
1.5 2.0
V
DD
(V)
V
OU
T
(V
)
S-80815CN
Pull-up to 3 V
Ta=-40C
Ta=25C
Ta=85C
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
PULL-UP (V)
V
DD
m
i
n
(V
)
S-80808CN
Pull-up to V
DD
:100 k
Ta=-40C
Ta=25C
Ta=85C
V
OUT
(V)
Remark V
DDmin.
is defined by the V
DD
voltage at which
V
OUT
goes below 10
% of PULL-UP voltage
when the V
DD
increase
from 0 V.
PULL-UP
PULL-UP
0.1
0
V
DD
(V)
V
DDmin
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
PULL-UP (V)
V
DD
m
i
n
(V
)
S-80815CN
Pull-up to V
DD
:100 k
Ta=-40C
Ta=25C
Ta=85C
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
27
(10) Dynamic response - Load capacitor (C
OUT
)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01
0.1
Load capacitance (
F)
Res
pon
se tim
e
(m
s)
S-80808CL
Ta=25C
t
pLH
t
pHL
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001
0.01
0.1
Load capacitance (
F)
R
e
sp
on
se t
i
me
()
S-80808CN
Ta=25C
t
pHL
t
pLH
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01
0.1
Load capacitance (
F)
Res
pon
se tim
e
(m
s)
S-80814CL
Ta=25C
t
pLH
t
pHL
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001
0.01
0.1
Load capacitance (
F)
R
e
sponse time (m
s
)
S-80814CN
Ta=25C
t
pHL
t
pLH
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01
0.1
Load capacitance (
F)
Res
pon
se tim
e
(m
s)
S-80815CL
Ta=25C
t
pLH
t
pHL
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001
0.01
0.1
Load capacitance (
F)
R
e
sponse time (m
s
)
S-80815CN
Ta=25C
t
pHL
t
pLH
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
28
Seiko Instruments Inc.
0.001
0.01
0.1
1
0.00001 0.0001 0.001
0.01
0.1
Load capacitance (
F)
R
e
sponse time (m
s
)
S-80860CL Ta=25C
t
pLH
t
pHL
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001
0.01
0.1
Load capacitance (
F)
R
e
spo
n
s
e
t
i
m
e
(ms)
S-80860CN Ta=25C
t
pHL
t
pLH
V
DD
OUT
VSS
C
OUT
VDD
S-808xxC
Series
V
V
R
*1
100 k
*1. R is not necessary for CMOS output products.
Figure 19 Measurment Circuit for Response Time
Figure 18 Measurment Condition for Response Time
V
DD
90 %
V
DD
10 %
V
IH
INPUT VOLTAGE
OUTPUT VOLTAGE
V
IL
V
DD
t
pHL
t
pLH
V
IH
=10 V, V
IL
=0.95 V
1
s
1
s
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
29
I
I
I
I Application Circuit Examples
1. Microcomputer reset circuits
If the power supply voltage to a microcomputer falls below the specified level, an unspecified
operation may be performed or the contents of the memory register may be lost. When power
supply voltage returns to normal, the microcomputer needs to be initialized before normal operations
can be done.
Reset circuits protect microcomputers in the event of current being momentarily switched off or
lowered.
Reset circuits shown in Figures 20 and 21 can be easily constructed with the help of the S-808xxC
series, since the detector has low operating voltage, a high-precision detection voltage and
hysteresis.
VSS
VSS
VDD
Microcomputer
S-808xxCL
(Nch open-drain products only)
VDD1
VDD2
Microcomputer
S-808xxCN
Figure 20 Reset Circuit (S-808xxCL)
Figure 21 Reset Circuit (S-808xxCN)
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
S-808xxC Series
Rev.2.0
_31
30
Seiko Instruments Inc.
2. Power-on reset circuit
A power-on reset circuit can be constructed using Nch open-drain product of S-808
C Series.
(Nch open-drain)
OUT
VIN
VSS
VDD
S-
808
CN
R
C
Di
(R
75 k)
Figure 22
Remark 1. Resistor R should be 75 k
or less to avoid oscillation.
2. Diode Di instantaneously discharges the charge stored in the capacitor C at the power
falling,Di can be removed when the delay of the falling time is not important.
V
DD
(V)
t (s)
OUT
(V)
t (s)
Figure 23
Remark When the power rises sharply as shown in the Figure 24 left, the output may goes to the
high level for an instant in the undefined region where the output voltage is undefined since
the power voltage is less than the minimum operation voltage.
V
DD
(V)
t (s)
OUT
(V)
t (s)
Figure 24
HIGH-PRECISION SMALL PACKAGE VOLTAGE DETECTOR
Rev.2.0
_31
S-808xxC Series
Seiko Instruments Inc.
31
3. Change of detection voltage
In Nch open-drain output products of the S-808xxC series, detection voltage can be changed using
resistance dividers or diodes as shown in Figures 25 and 26. In Figure 25 hysteresis width also
changes.
(Nch open-drain)
VSS
VDD
-
(Nch open-drain)
Detection voltage
=
-V
DET
RA
+RB
RB
Hysterisis Width
=
V
HYS
Detection voltage
=V
f1
+V
f2
+(-V
DET
)
Figure 26
(RA
75 k)
Remark 1. If RA and RB are large, the hysteresis width may be
larger than the value given by the above equation
due to the through-type current (which flows slightly
in an Nch open-drain product).
2. RA should be 75 k
or less to avoid oscillation.
Figure 25
RA
+RB
RB
RA
OUT
VIN
+
S-
808
CN
RB
V
f1
OUT
VIN
VSS
VDD
S-
808
CN
V
f2
Caution The above connection diagram and constants do not guarantee correct operation.
Perform sufficient evaluation using the actual application to set the constants.
I
I
I
I Precautions
In CMOS output products of the S-808xxC series, the short-circuit current flows at the detection and the
release. If the input impedance is high, oscillation may occur due to the voltage drop by the short-circuit
current during releasing.
Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in
electrostatic protection circuit.
When designing for mass production using an application circuit described herein, parts deviation and
temperature characteristics should be taken into consideration.
Seiko Instruments Inc. shall not bear any responsibility for the patents on the circuits described herein.
No.
TITLE
SCALE
UNIT
mm
Seiko Instruments Inc.
0.40.05
1.50.1
4.50.1
1.60.2
1.50.1 1.50.1
0.450.1
0.40.1
0.40.1
45
3
1
2
No. UP003-A-P-SD-1.1
UP003-A-P-SD-1.1
SOT893-A-PKG Dimensions
No.
TITLE
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UNIT
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Seiko Instruments Inc.
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1.5
+0.1
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1.5
+0.1
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4.750.1
5 max.
No. UP003-A-C-SD-1.1
UP003-A-C-SD-1.1
SOT893-A-Carrier Tape
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No.
TITLE
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Seiko Instruments Inc.
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No. UP003-A-R-SD-1.1
UP003-A-R-SD-1.1
SOT893-A-Reel
Enlarged drawing in the central part
No.
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UNIT
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Seiko Instruments Inc.
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5.2max.
0.450.1
0.6max.
2.5
+0.4
-0.1
No. YF003-A-P-SD-1.1
YF003-A-P-SD-1.1
TO92-A-PKG Dimensions
No.
TITLE
SCALE
UNIT
mm
Seiko Instruments Inc.
12.71.0
6.350.4
4.00.2
0.5max.
1#pin
3#pin
1.0max.
1.0max.
0.70.2
1.45max.
No. YF003-A-C-SD-4.1
YF003-A-C-SD-4.1
TO92-A-Radial Tape
Marked side
12.70.3(20 pitches : 254.01.0)
Feed direction
Feed direction
Marked side
No.
TITLE
SCALE
UNIT
mm
Seiko Instruments Inc.
3582
430.5
530.5
50.5
20.5
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2,000
No. YF003-A-R-SD-2.1
YF003-A-R-SD-2.1
TO92-A-Reel
No.
TITLE
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UNIT
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Seiko Instruments Inc.
5.2max.
4.2max.
0.6max.
0.450.1
0.450.1
1.27
No. YS003-B-P-SD-1.1
YS003-B-P-SD-1.1
TO92-B-PKG Dimensions
Marked side
No.
TITLE
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UNIT
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Seiko Instruments Inc.
4.2max.
0.450.1
Marked side
1.27
5.2max.
0.450.1
0.6max.
2.5
+0.4
-0.1
No. YF003-A-P-SD-1.1
YF003-A-P-SD-1.1
TO92-A-PKG Dimensions
No.
TITLE
SCALE
UNIT
mm
Seiko Instruments Inc.
12.71.0
6.350.4
4.00.2
0.5max.
1#pin
3#pin
1.0max.
1.0max.
0.70.2
1.45max.
Feed direction
12.70.3(20 pitches : 254.01.0)
Marked side
No. YZ003-C-C-SD-3.1
YZ003-C-C-SD-3.1
TO92-C-Radial Tape
No.
TITLE
SCALE
UNIT
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330
47
262
Spacer
320
40
60
165
320
QTY.
2,500
No. YZ003-C-Z-SD-2.1
YZ003-C-Z-SD-2.1
Side spacer placed in front side
Space more than 4 strokes
TO92-C-Ammo Packing
No.
TITLE
SCALE
UNIT
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Seiko Instruments Inc.
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+0.1
-0.05
0.4
+0.1
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0.05
1
2
4
3
0.16
+0.1
-0.06
1.30.2
2.00.2
No. NP004-A-P-SD-1.1
SC82AB-A-PKG Dimensions
NP004-A-P-SD-1.1
No.
TITLE
SCALE
UNIT
mm
Seiko Instruments Inc.
1.10.1
0.20.05
4.00.1
2.00.05
4.00.1
1.5
1.050.1
+0.1
-0.05
2.20.2
(0.7)
No. NP004-A-C-SD-2.1
NP004-A-C-SD-2.1
SC82AB-A-Carrier Tape
Feed direction
No.
TITLE
SCALE
UNIT
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3,000
(60)
(60)
130.2
12.5max.
9.00.3
No. NP004-A-R-SD-1.1
NP004-A-R-SD-1.1
SC82AB-A-Reel
Enlarged drawing in the central part
1 . 2 0 . 1
(0.14)
0.8max.
Seiko Instruments Inc.
No.
TITLE
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(0.7typ.)
0.150.1
0.30.05
0.30.05
0.30.05
0.150.1
Direction identification mark
(0.44)
Electrode (Magnified)
(0.8)
0.30.05
R(0.15)
1
2
3
4
No. BB004-A-P-SD-1.1
SNB4B-A-PKG Dimensions
BB004-A-P-SD-1.1
No.
TITLE
SCALE
UNIT
mm
Feed direction
4.00.1
2.00.05
4.00.1
1.5
+0.1
-0
0.5
1.50.1
0.90.1
0.30.05
+0.1
-0
Seiko Instruments Inc.
SNB4B-A-Carrier Tape
No. BB004-A-C-SD-1.1
BB004-A-C-SD-1.1
1
2
3
4
No.
TITLE
SCALE
UNIT
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12.5max.
9.00.3
130.2
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Enlarged drawing in the central part
SNB4B-A-Reel
No. BB004-A-R-SD-1.1
BB004-A-R-SD-1.1
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UNIT
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2.90.2
1.90.2
0.950.1
0.40.1
0.16
+0.1
-0.06
1
2
3
4
5
No. MP005-A-P-SD-1.2
MP005-A-P-SD-1.2
SOT235-A-PKG Dimensions
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TITLE
SCALE
UNIT
mm
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1.5
+0.1
-0
2.00.05
1.0
+0.2
-0
4.00.1
1.40.2
0.250.1
3.20.2
1
2
3
4
5
No. MP005-A-C-SD-2.1
MP005-A-C-SD-2.1
SOT235-A-Carrier Tape
Feed direction
4.00.1(10 pitches:40.00.2)
No.
TITLE
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UNIT
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No. MP005-A-R-SD-1.1
MP005-A-R-SD-1.1
SOT235-A-Reel
Enlarged drawing in the central part
The information described herein is subject to change without notice.
Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus
installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc.
Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
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