S90N0232SUA_E3.0_00
Rev.3.0
_00
N-CHANNEL POWER MOS FET FOR SWITCHING
S-90N0232SUA
Seiko Instruments Inc.
1
The S-90N0232SUA is an N-channel power MOS
FET that realizes a low on-state resistance and ultra
high-speed switching characteristics. It is suitable for
speeding up switching, enabling a high efficient set
and energy saving. A gate protection diode is built in
as a countermeasure for static electricity. Small
SOT-89-3 package realize high-density mounting.
This product can be driven directly by a 2.5 V power
source. If use this product in combination with SII
switching regulator products, you can get the highest
performance.
Features
Low on-state resistance:
R
DS(on)1
= 0.11
Max. (V
GS
= 4.5 V, I
D
= 1.5 A)
R
DS(on)2
= 0.17
Max. (V
GS
= 2.5 V, I
D
= 1.5 A)
Ultra high-speed switching
Operational voltage:
2.5 V drive available
Built-in gate protection diode
Small package:
SOT-89-3
Applications
Notebook PCs
Cellular and portable phones
On-board power supplies
Packages
SOT-89-3
(Package drawing code: UP003-A)
Item code
Item code
: S-90N0232SUA-TF
Delivery form
: Taping only
N-CHANNEL POWER MOS FET FOR SWITCHING
S-90N0232SUA
Rev.3.0
_00
Seiko Instruments Inc.
2
Pin Configuration
Table 1
Pin
No.
Symbol
Description
1
G
Gate
pin
2
D
Drain
pin
3
S
Source
pin
SOT-89-3
Top view
1 2 3
Figure 1
Equivalent Circuit
G (Gate)
D (Drain)
S (Source)
Gate
Protection
Diode
Body
Diode
Caution The diode connected between the gate and source of the
transistor serves as a protector against electrostatic
discharge. Do not apply an electrostatic discharge to this
IC that exceeds the performance ratings of the built-in
gate protection diode.
And when this device actually used, an additional
protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this
device.
Figure 2
Absolute Maximum Ratings
Table 2
(Ta = 25
C unless otherwise specified)
Item Symbol
Conditions
Ratings
Unit
Drain to source voltage
(When between gate and source short circuits)
V
DSS
V
GS
= 0 V
20
V
Gate to source voltage
(When between drain and source short circuits)
V
GSS
V
DS
= 0 V
12
Drain current (DC)
I
D
3
A
Drain current (Pulse)
I
DP
PW = 10
s, Duty Cycle1%
9
Reverse drain current
I
DR
3
Power dissipation
*1, *2
P
D
2.5
W
Channel temperature
T
ch
150
C
Storage temperature
T
stg
-55 to +150
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
*1. Mounted on a ceramics board (1225 mm
2
1 mm)
*2. The allowable power dissipation differs depending on the mounting form.
N-CHANNEL POWER MOS FET FOR SWITCHING
Rev.3.0
_00
S-90N0232SUA
Seiko Instruments Inc.
3
Electrical Characteristics
DC characteristics
Table 3
(Ta = 25
C unless otherwise specified)
Item
Symbol Conditions
Min. Typ. Max.
Unit
Drain cut-off current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
A
Gate to source leakage current
I
GSS
V
GS
= 12 V, V
DS
= 0 V
10
Gate to source cut-off voltage
V
GS(off)
I
D
= 1 mA, V
DS
= 10 V
0.7
1.4 V
Drain to source on-state resistance
*1
R
DS(on)1
I
D
= 1.5 A, V
GS
= 4.5 V
0.08 0.11
R
DS(on)2
I
D
= 1.5 A, V
GS
= 2.5 V
0.13 0.17
Forward transfer admittance
*1
|Y
fs
| I
D
= 1.5 A, V
DS
= 10 V
6
S
Body drain diode forward voltage
V
f
I
f
= 3 A, V
GS
= 0 V
0.85 1.1 V
*1. Effective during pulse test (600
s).
Dynamic characteristics
Table 4
(Ta = 25
C unless otherwise specified)
Item
Symbol Conditions
Min. Typ. Max.
Unit
Input capacitance
C
iss
V
DS
= 10 V, V
GS
= 0 V,
185
pF
Output capacitance
C
oss
f = 1 MHz
65
Feedback capacitance
C
rss
45
N-CHANNEL POWER MOS FET FOR SWITCHING
S-90N0232SUA
Rev.3.0
_00
Seiko Instruments Inc.
4
Switching characteristics
Table 5
(Ta = 25
C unless otherwise specified)
Item
Symbol Conditions
Min. Typ. Max.
Unit
Turn-on delay time
t
d(on)
V
GS
= 5 V, I
D
= 1.5 A,
10
ns
Rise time
t
r
V
DD
= 10 V
35
Turn-off delay time
t
d(off)
45
Fall time
t
f
30
D.U.T.
R
L
V
DD
PG.
V
GS
0
= 10 s
Duty Cycle
1 %
10 %
90 %
10 %
90 %
t
d(on)
t
d(off)
t
r
t
f
V
DS
V
GS
V
DS
Wave Form
V
GS
Wave Form
0
0
10 %
90 %
Figure 3
Thermal characteristics
Table 6
(Ta = 25
C unless otherwise specified)
Item
Symbol Conditions
Min. Typ. Max.
Unit
Thermal resistance
(Channel to ambience)
R
th(ch-a)
Mounted on a ceramics board
(1225 mm
2
1 mm)
50 C/W
Precautions
The application conditions for the input voltage, output voltage, and load current should not exceed the
allowable package power dissipation after mounting.
SII claims no responsibility for any disputes arising out of or in connection with any infringement by
products including this IC of patents owned by a third party.
N-CHANNEL POWER MOS FET FOR SWITCHING
Rev.3.0
_00
S-90N0232SUA
Seiko Instruments Inc.
5
Typical Characteristics
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
Pulse test (600
s), Ta = 25C
Pulse test (600
s), V
DS
= 10 V
Drai
n Current
I
D
[A]
9
8
7
6
5
4
3
2
1
0
2
3
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
V
GS
= 2.5 V
0
1
4
5
2.0 V
1.5 V
Drai
n Current
I
D
[A]
9
8
7
6
5
4
3
2
1
0
2
3
1
4
0
125 C
25 C
55 C
Drain to Source Voltage V
DS
[V]
Gate to Source Voltage V
GS
[V]
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse test (600
s), Ta = 25C
Pulse test (600
s), Ta = 25C
Drai
n t
o
S
ourc
e
On-S
t
a
t
e
Res
i
s
t
anc
e
R
D
S
(
on)
[
]
0.2
0.15
0.1
0.05
0
4
6
2
8
3.0 A
I
D
= 1.5 A
0
10
Drai
n t
o
S
ourc
e
On-S
t
a
t
e
Res
i
s
t
anc
e
R
D
S
(
on)
[
]
1
0.1
0.01
6
9
3
0
V
GS
= 2.5 V
4.5 V
Gate to Source Voltage V
GS
[V]
Drain Current I
D
[A]
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
GATE TO SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
Pulse test (600
s)
V
DS
= 10 V, I
D
= 1 mA
Drai
n t
o
S
ourc
e
On-S
t
a
t
e
Res
i
s
t
anc
e
R
D
S
(
on)
[
]
0.25
0.20
0.15
0.10
0.05
0
V
GS
= 4.5 V
25
25
75
100
50
0
50
125
150
V
GS
= 2.5 V
I
D
= 3.0 A
1.5 A
I
D
= 3.0 A
1.5 A
Gat
e
t
o
S
ourc
e
Cut
-
of
f
V
o
l
t
age V
a
ri
anc
e
V
G
S
(
o
ff)
V
a
ri
anc
e [
V
]
0.2
0.1
0
0.1
0.2
0.3
0.4
100
50
0
50
150
Ambient Temperature Ta [C]
Ambient Temperature Ta [C]
Document Outline
- S-90N0232SUA
- Cover
- Features
- Applications
- Packages
- Item code
- Pin Configuration
- Equivalent Circuit
- Absolute Maximum Ratings
- Electrical Characteristics
- Precautions
- Typical Characteristics
- Marking Specification
- Package drawing
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