8/10/2000
ON-STATE CHARACTERISTICS
MODEL
V
DRM
/ V
RRM
@
0 to +125
o
C
-40
o
C
volts
C458PD
1400
1300
C458PB
1200
1100
C458P
1000
900
Type C458 reverse blocking thyristor is suitable for inverter applications. The silicon junction is
manufactured by the all-diffused process and utilizes the field-proven, interdigitated amplifying gate
structure. It is supplied in an industry accepted disc-type package, ready to mount using commercially
available heat dissipators and mechanical clamping hardware.
Gate Drive Requirements:
20 V / 20 ohms / 0.5us risetime
5 - 10 us minimum duration
External Clamping Force
5000 - 6000 lbs.
24.5 - 26.7 kN
INVERTER THYRISTO R
C458
53mm / 1400V / 2000Arms / 35us
MECHANICAL OUTLINE
S
S
S
S
S
ILICON
P
P
P
P
P
OWER
C O
C O
C O
C O
C O
RPORATION
175 GREAT VALLEY PKWY. MALVERN, PA 19355
U S A
B
B
A
2 0 5
D
CL
CL
J
A
A
A
A
A
= 2.96 in (75.2 mm)
= 2.96 in (75.2 mm)
= 2.96 in (75.2 mm)
= 2.96 in (75.2 mm)
= 2.96 in (75.2 mm)
B
B
B
B
B
= 1.90 in (48.3 mm)
= 1.90 in (48.3 mm)
= 1.90 in (48.3 mm)
= 1.90 in (48.3 mm)
= 1.90 in (48.3 mm)
D= 1.07 in (27.2 mm)
D= 1.07 in (27.2 mm)
D= 1.07 in (27.2 mm)
D= 1.07 in (27.2 mm)
D= 1.07 in (27.2 mm)
THERMAL IMPEDANCE
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